CJL8820 Search Results
CJL8820 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
CJL8820
|
JCET Group | Dual N-Channel MOSFET in SOT-23-6L package, 20V drain-source voltage, 7A continuous drain current, 21mΩ typical RDS(on) at 10V VGS, featuring trench technology for low on-resistance and gate charge, suitable for load switch applications. | Original |
CJL8820 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8820 SOT-23-6L Dual N-Channel MOSFET DESCRIPTION The CJL8820 uses advanced trench technology to provide excellent RDS ON and low gate charge. It is ESD protected. This device is suitable |
Original |
OT-23-6L CJL8820 OT-23-6L CJL8820 250uA | |
|
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8820 Dual N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The CJL8820 use advanced trench technology to provide excellent RDS ON and low gate charge. It is ESD protected. This device is suitable |
Original |
OT-23-6L CJL8820 CJL8820 OT-23-6L 250uA |