CGHV27200 Search Results

CGHV27200 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGHV27200F		Cree	RF FETs, Discrete Semiconductor Products, HEMT RF 50V 200W 2.7GHZ 440162	Original	PDF		11
CGHV27200-TB		Cree	RF FETs, Discrete Semiconductor Products, HEMT RF 50V 100W 2.7GHZ 440162	Original	PDF		11

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MACOM


MACOM CGHV27200-TB EVAL BOARD FOR CGHV27200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	CGHV27200-TB	Bulk	1		1	1 $500.00 10 $500.00 100 $500.00 1000 $500.00 10000 $500.00	Buy Now
	CGHV27200-TB	Bulk			2	1 - 10 $500.00 100 $500.00 1000 $500.00 10000 $500.00	Buy Now

CGHV27200 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a	Original	CGHV27200 CGHV27200 CGHV27 GHV27200P CGHV27200-TB	PDF
Contextual Info: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz	Original	CGHV27200 CGHV27200 CGHV27 GHV27200P	PDF
Contextual Info: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a	Original	CGHV27200 CGHV27200 CGHV27 GHV27200P CGHV27200-TB	PDF
Contextual Info: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a	Original	CGHV27200 CGHV27200 CGHV27 GHV27200P	PDF
Contextual Info: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz	Original	CGHV27200 CGHV27200 CGHV27 GHV27200P	PDF
Contextual Info: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz	Original	CGHV27200 CGHV27200 CGHV27 GHV27200P	PDF