CEU4060A Search Results

Contextual Info: CED4060AL/CEU4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 16A, RDS ON = 75mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: CED4060A/CEU4060A March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V , 15A , RDS ON =85m Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). D 6 High power and current handling capability. TO-251 & TO-252 package.

Contextual Info: CED4060A/CEU4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS ON = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package.

Contextual Info: CED4060A/CEU4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS ON = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package.

Contextual Info: CED4060AL/CEU4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS ON = 80mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: CED4060A/CEU4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS ON = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package.

Contextual Info: CED4060AL/CEU4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS ON = 80mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: CED4060AL/CEU4060AL March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES 6 60V , 15A , RDS ON =80m Ω @VGS=10V. RDS(ON)=85mΩ @VGS=5V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability.

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223