NCE70T260K
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NCEPOWER
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NCE70T260I, NCE70T260K are 700V N-channel super junction power MOSFETs in TO-251 and TO-252 packages, featuring 220 mΩ typical RDS(ON), 15A continuous drain current, ultra-low gate charge, and advanced trench gate technology for high-efficiency power conversion applications. |
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NCE70T680
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NCEPOWER
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NCE70T680D, NCE70T680, NCE70T680F are 700V N-channel super junction power MOSFETs with 680 mΩ RDS(ON), 7A continuous drain current, low gate charge, and avalanche tested, suitable for PFC, SMPS, and industrial power applications. |
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NCE70T260I
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NCEPOWER
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NCE70T260I, NCE70T260K are 700V N-channel super junction power MOSFETs with low on-resistance of 260 mΩ typical, advanced trench gate technology, ultra-low gate charge, and 100% avalanche tested for high reliability in SMPS, PFC, and industrial applications. |
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NCE70T360D
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NCEPOWER
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NCE70T360D, NCE70T360, NCE70T360F are 700V N-channel super junction power MOSFETs with low on-resistance of 330mΩ typical, low gate charge, and designed for high-efficiency power conversion applications such as PFC and SMPS. |
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NCE70T1K2K
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NCEPOWER
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NCE70T1K2I and NCE70T1K2K are 700V N-channel super junction power MOSFETs in TO-251 and TO-252 packages, featuring 1100 mΩ typical RDS(ON), 4A continuous drain current, ultra-low gate charge, and avalanche ruggedness. |
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NCE70T1K2R
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NCEPOWER
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NCE70T1K2R is an N-channel super junction power MOSFET with 700V drain-source voltage, 1100mΩ typical RDS(ON), 4A continuous drain current, and low gate charge, housed in a SOT-223-2L package. |
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NCE70T540D
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NCEPOWER
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NCE70T540D, NCE70T540, NCE70T540F are 700V N-channel super junction power MOSFETs with 540 mOhm typical RDS(on), 8A continuous drain current, low gate charge, and TO-263, TO-220, TO-220F packages. |
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NCE70T680F
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NCEPOWER
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NCE70T680D, NCE70T680, NCE70T680F are 700V N-channel super junction power MOSFETs with 680 mΩ RDS(ON), 7A continuous drain current, low gate charge, and TO-263/TO-220/TO-220F packaging. |
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NCE70T680K
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NCEPOWER
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NCE70T680I, NCE70T680K are 700V super junction power MOSFETs in TO-251 and TO-252 packages with typical RDS(ON) of 680 mΩ, low gate charge, and 100% avalanche tested for PFC, SMPS, and industrial power applications. |
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NCE70T540F
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NCEPOWER
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NCE70T540D, NCE70T540, NCE70T540F are 700V N-channel super junction power MOSFETs with 540 mΩ RDS(ON), 8A continuous drain current, low gate charge, and avalanche tested, suitable for PFC, SMPS, and UPS applications. |
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NCE70T540I
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NCEPOWER
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NCE70T540I and NCE70T540K are N-channel super junction power MOSFETs with 700 V drain-source voltage, 8 A continuous drain current, 540 mΩ typical RDS(ON), low gate charge, and TO-251/TO-252 packages. |
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NCE70T540K
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NCEPOWER
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700 V N-Channel Super Junction Power MOSFET with 540 mΩ typical RDS(ON), 8 A continuous drain current, ultra-low gate charge, and 100% avalanche tested, suitable for PFC, SMPS, and industrial power applications. |
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NCE70T260F
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NCEPOWER
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NCE70T260D, NCE70T260, NCE70T260F are 700V N-channel super junction power MOSFETs with 260 mΩ typical RDS(ON), 15A continuous drain current, low gate charge, and available in TO-263, TO-220, and TO-220F packages. |
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NCE70N100I
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NCEPOWER
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NCE70N100I is an N-channel enhancement mode power MOSFET with 100V drain-source voltage, 57A continuous drain current, and low on-resistance of 12mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. |
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NCE70T900K
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NCEPOWER
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NCE70T900I and NCE70T900K are 700V, 5A super junction power MOSFETs in TO-251 and TO-252 packages with low RDS(ON) of 820 mΩ, trench gate technology, and ultra-low gate charge for high-efficiency power conversion applications. |
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NCE70T680I
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NCEPOWER
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700 V NCE70T680I, NCE70T680K N-Channel Super Junction Power MOSFET with 680 mΩ RDS(ON), 7 A continuous drain current, low gate charge, and TO-251/TO-252 package. |
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NCE70H10F
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NCEPOWER
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NCE70H10F is an N-Channel Enhancement Mode Power MOSFET with 70V drain-source voltage, 100A continuous drain current, and low RDS(ON) of 4.8mΩ typical at VGS=10V, suitable for high-frequency switching and power control applications. |
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NCE70T900I
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NCEPOWER
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NCE70T900I and NCE70T900K are 700V N-channel super junction power MOSFETs with low on-resistance of 820 mΩ typical, 5A continuous drain current, and ultra-low gate charge, available in TO-251 and TO-252 packages. |
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NCE70T1K2I
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NCEPOWER
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NCE70T1K2I and NCE70T1K2K are N-channel super junction power MOSFETs with 700 V drain-source voltage, 1100 mΩ typical RDS(ON), 4 A continuous drain current, low gate charge, and TO-251/TO-252 packaging. |
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NCE70T360K
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NCEPOWER
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NCE70T360K and NCE70T360I are 700V N-channel super junction power MOSFETs with low RDS(ON) of 330mΩ, 11.5A continuous drain current, advanced trench gate technology, low gate charge, and 100% avalanche tested for reliable power conversion applications. |
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NCE70T260K
