BUT11 Search Results

by205

Abstract: BY205-400 diode by205 2n2222 transistor pin b c e by205 diode BUT11 D44H11 2N2222 2N2904 D45H11
Contextual Info: BUT11 NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA

BUT11F

Abstract: DSA002309 silicon transistor npn 395 BUT11
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11F • DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS Ta=25℃

d 42030 transistor

Abstract: AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A

BUT11A1

Abstract: BUT-11 BUT11A CIRCUIT BUT11 BUT11A
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage

BUT11AF

Abstract: 150v power diode
Contextual Info: BUT11AF SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. TO-220F QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BUT11A Features Lead Free Finish/RoHS Compliant Note1 ("P" Suffix designates • • • • • • NPN Silicon

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BUT11A Features • • • • High voltage, high speed NPN power transistors. With TO-220 package Intended for use in converters, inverters, switching regulators, motor

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BUT11A Features • • • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates RoHS Compliant. See ordering information)

BUT11A CIRCUIT

Abstract: BUT11
Contextual Info: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector Base Voltage Rating Unit 850 V 1000 V 400 V VcES : BUT11 Collector Emitter Voltage Emitter Base Voltage : B UT11A : BUT11

BUT11AX

Abstract: BUT11F
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11F GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.

Contextual Info: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION

BUT11APX

Abstract: BUT11APX-1200 BUT11
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUT11APX-1200 Silicon Diffused Power Transistor Product specification April 1999 1;3 Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 GENERAL DESCRIPTION Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack

BUT11A Switching regulators

Abstract: BUT11A CIRCUIT NPN switching power transistor npn switching transistor Ic 5A BUT11A but11a isc
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11A DESCRIPTION •High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS Ta=25℃

BUT11

Abstract: transistor but11
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11 DESCRIPTION •High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS Ta=25℃

BUT11 equivalent

Abstract: transistor t220 but11 BUT-11 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11 SGS
Contextual Info: • ? CLSC}B3J 0Q£flb55 0 ■ S C S -T H O M S O N []*[RK»i gïïl(Q M(gS S_G S - T H O M S O N "p3VI?> BUT11 FI B U T 1 1A /A F I _ 3QE J> HIGH VOLTAGE SWITCH DESCRIPTION The BUT11/A and BUT11FI/AFI are silicon miltiepitaxial mesa NPN transistors respectively in Jedec

mx 2sb834

Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
Contextual Info: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BUT11A Features • • • • • • • • Halogen free available upon request by adding suffix "-HF"

BUT11AF

Abstract: BUT11F NPN VCEo 1000V BUT11Af equivalent
Contextual Info: SavantIC Semiconductor Product Specification BUT11F BUT11AF Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION

BUT11

Abstract: BUT-11
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 1.Base TO-220 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage

Contextual Info: MOTOROLA Order this document by BUT11AF/D SEMICONDUCTOR TECHNICAL DATA BUT11AF Full Pak High V oltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art

transistor IC 1597

Abstract: 221D BUT11AF Transistor 244 Motorola MOTOROLA POWER TRANSISTOR rev 6
Contextual Info: MOTOROLA Order this document by BUT11AF/D SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art

BUT11AI

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control

BUT11

Abstract: BUT-11 BUT11A transistor VCEO 1000V NPN Transistor VCEO 1000V
Contextual Info: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°c Characteristic Symbol Rating Unit VCES 850 1000 400 450 9 5 10 2 4 100 150 -65~150 V V V V V A A A A W °c °c Collector-Emitter Voltage:BUT11

ce 1588

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BUT11A Features • • • High voltage, high speed NPN power transistors. With TO-220 package Intended for use in converters, inverters, switching regulators, motor