BUK9608-55B |
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NXP Semiconductors
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BUK9608-55B - Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 16 nC; RDS(on): 7@10V8.4@5V9.3@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 55 V |
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BUK9608-55B |
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Philips Semiconductors
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Trenchmos logic level FET |
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BUK9608-55B,118 |
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NXP Semiconductors
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BUK9608-55 - TRANSISTOR 75 A, 55 V, 0.0093 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power |
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BUK9608-55B,118 |
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NXP Semiconductors
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Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 16 nC; RDS(on): 7@10V8.4@5V9.3@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
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BUK9608-55B/T3 |
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NXP Semiconductors
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Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 16 nC; RDS(on): 7@10V8.4@5V9.3@4.5V mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 55 V |
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Original |
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