BUK7610-100B |
|
NXP Semiconductors
|
N-channel TrenchMOS standard level FET |
|
Original |
PDF
|
BUK7610-100B |
|
NXP Semiconductors
|
BUK7610-100B - TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 22 nC; RDS(on): 10@10V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 100 V |
|
Original |
PDF
|
BUK7610-100B |
|
Philips Semiconductors
|
TrenchMOS standard level FET |
|
Original |
PDF
|
BUK7610-100B,118 |
|
NXP Semiconductors
|
BUK7510100 - TRANSISTOR 75 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power |
|
Original |
PDF
|
BUK7610-100B,118 |
|
NXP Semiconductors
|
TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 22 nC; RDS(on): 10@10V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 100 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
|
Original |
PDF
|
BUK7610-100B/T3 |
|
NXP Semiconductors
|
TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 22 nC; RDS(on): 10@10V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 100 V |
|
Original |
PDF
|
BUK7610-30 |
|
Philips Semiconductors
|
TrenchMOS Transistor Standard Level FET |
|
Original |
PDF
|
BUK7610-55AL |
|
NXP Semiconductors
|
N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 10@10V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 55 V |
|
Original |
PDF
|
BUK7610-55AL |
|
NXP Semiconductors
|
BUK75/7610-55AL; Optimized GPA TrenchMOS for Linear Mode Circuits |
|
Original |
PDF
|
BUK7610-55AL |
|
Philips Semiconductors
|
SMD, TrenchMOS Power Amp., 55V 75A 300W, MOS-FET N-Channel enhanced |
|
Original |
PDF
|
BUK7610-55AL,118 |
|
NXP Semiconductors
|
N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 10@10V mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
|
Original |
PDF
|