BSZ0908ND Search Results

Contextual Info: Preliminary Datasheet PowerStage 3x3 BSZ0908ND Product Summary Features • Dual N-channel OptiMOS MOSFET Q1 Q2 30 30 V VGS=10 V 18 9 mΩ VGS=4.5 V 25 13 20 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID · 100% Lead-free; RoHS compliant

Contextual Info: BSZ0908ND PowerStage 3x3 Product Summary Features • Dual N-channel OptiMOS MOSFET Q1 Q2 30 30 V VGS=10 V 18 9 mW VGS=4.5 V 25 13 19 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID · 100% Lead-free; RoHS compliant

BSZ0908ND

Abstract: T1018
Contextual Info: Preliminary Datasheet PowerStage 3x3 BSZ0908ND Product Summary Features • Dual N-channel OptiMOS MOSFET Q1 Q2 30 30 V VGS=10 V 18 9 mΩ VGS=4.5 V 25 13 20 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID · 100% Lead-free; RoHS compliant

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Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

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