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    BSZ0907ND Search Results

    BSZ0907ND Functional Equivalents (1)

    The Functional Equivalents tab will give you options that are likely to match the same function of BSZ0907ND, but it may not fit your design.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    FDMC8200 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

    BSZ0907ND Datasheets (1)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BSZ0907NDXTMA2
    		Infineon Technologies MOSFET 2N-CH 30V 20A WISON-8 Original PDF 248.4KB 3
    SF Impression Pixel

    BSZ0907ND Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSZ0907NDXTMA2

    MOSFET 2N-CH 30V 6.7A WISON-8
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    DigiKey BSZ0907NDXTMA2 Tape & Reel
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    Vyrian BSZ0907NDXTMA2 10,811
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    Infineon Technologies AG BSZ0907ND

    Trans MOSFET N-CH 30V 11.1A/13.8A 8-Pin WISON EP T/R
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    Bristol Electronics BSZ0907ND 3,384 1
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    Quest Components () BSZ0907ND 2,976
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    BSZ0907ND Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: BSZ0907ND Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 9.5 7.2 mΩ VGS=4.5 V 13 10 25 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID A · 100% Lead-free; RoHS compliant


    Original     		BSZ0907ND IEC61249-2-21 0907ND B6D398 89456789ABC586 864C234C 3F4564% 3FC586 3BF34 PDF

    0907ND

    Contextual Info: BSZ0907ND Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 9.5 7.2 mW VGS=4.5 V 13 10 25 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID A · 100% Lead-free; RoHS compliant


    Original     		BSZ0907ND IEC61249-2-21 0907ND 0907ND PDF

    bsz0907

    Abstract: 0907ND BSZ0907ND
    Contextual Info: BSZ0907ND Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 9.5 7.2 mΩ VGS=4.5 V 13 10 25 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID A · 100% Lead-free; RoHS compliant


    Original     		BSZ0907ND IEC61249-2-21 0907ND bsz0907 0907ND BSZ0907ND PDF

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    Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Contextual Info: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


    Original     		PDF