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    BLS6G3135- Price and Stock

    Ampleon BLS6G3135-20,112

    RF MOSFET LDMOS 32V CDFM2
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    Ampleon BLS6G3135-120,112

    RF MOSFET LDMOS 32V SOT502A
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    DigiKey BLS6G3135-120,112 Tray
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    Rochester Electronics LLC BLS6G3135S-20,112

    RF PFET, 1-ELEMENT, S BAND, SILI
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    DigiKey BLS6G3135S-20,112 Tube 2
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    Ampleon BLS6G3135S-120,112

    RF MOSFET LDMOS 32V SOT502B
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    Flip Electronics BLS6G3135S-120,112 2
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    Ampleon BLS6G3135-20112

    Transistor RF FET N-CH 60V 2.1A 3.1GHz to 3.5GHz 3-Pin SOT-608A Bulk - Rail/Tube (Alt: BLS6G3135-20,112)
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    Avnet Americas BLS6G3135-20112 Tube 60
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    BLS6G3135- Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BLS6G3135-120 NXP Semiconductors LDMOS S-Band radar power transistor Original PDF
    BLS6G3135-120,112 NXP Semiconductors LDMOS S-Band radar power transistor; Package: SOT502A (LDMOST); Container: Blister pack Original PDF
    BLS6G3135-120i LDMOS Transistor Model NXP Semiconductors BLS6G3135-120i LDMOS Transistor Model Original PDF
    BLS6G3135-20 NXP Semiconductors BLS6G3135 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power Original PDF
    BLS6G3135-20 NXP Semiconductors LDMOS S-band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 45 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 20 W; Package material: SOT608A ; Power gain: 15.5 dB Original PDF
    BLS6G3135-20,112 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 60V 15.5DB SOT608A Original PDF
    BLS6G3135-20,112 NXP Semiconductors BLS6G3135 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power Original PDF
    BLS6G3135-20,112 NXP Semiconductors LDMOS S-band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 45 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 20 W; Package material: SOT608A ; Power gain: 15.5 dB; Package: SOT608A (CDFM2); Container: Blister pack Original PDF
    BLS6G3135-20i NXP Semiconductors BLS6G3135-20i LDMOS Transistor Model Original PDF
    BLS6G3135S-120 NXP Semiconductors LDMOS S-Band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 43 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 120 W; Package material: SOT502B ; Power gain: 11 dB Original PDF
    BLS6G3135S-120 NXP Semiconductors LDMOS S-Band radar power transistor Original PDF
    BLS6G3135S-120,112 NXP Semiconductors LDMOS S-Band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 43 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 120 W; Package material: SOT502B ; Power gain: 11 dB; Package: SOT502B (LDMOST); Container: Blister pack Original PDF
    BLS6G3135S-20 NXP Semiconductors LDMOS S-Band radar power transistor Original PDF
    BLS6G3135S-20,112 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 60V 15.5DB SOT608B Original PDF
    BLS6G3135S-20,112 NXP Semiconductors BLS6G3135S-20 - LDMOS S-Band radar power transistor, SOT608B Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLS6G3135S-20,112 NXP Semiconductors LDMOS S-Band radar power transistor; Package: SOT608B (CDFM2); Container: Bulk Pack Original PDF