BLF6G22-130 |
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NXP Semiconductors
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Boost the efficiency of UMTS macrocell basestations; NXP Doherty reference design with BLF6G22-130 |
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BLF6G22-180PN |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 50 W; Package material: SOT539A ; Power gain: 17.5 dB |
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BLF6G22-180PN,112 |
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 17DB SOT539A |
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BLF6G22-180PN,112 |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 50 W; Package material: SOT539A ; Power gain: 17.5 dB; Package: SOT539A (LDMOST); Container: Blister pack |
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BLF6G22-180PN,112 |
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NXP Semiconductors
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RF FETs, Discrete Semiconductor Products, TRANS BASESTATION SOT539A |
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PDF
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BLF6G22-180PN,135 |
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NXP Semiconductors
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BLF6G22-180PN - Power LDMOS transistor, SOT539A Package, Standard Marking, Reel Pack, SMD, Large |
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PDF
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BLF6G22-180RN,112 |
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NXP Semiconductors
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Power LDMOS transistor, SOT502A (LDMOST), Blister pack |
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BLF6G22-45 |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB |
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BLF6G22-45 |
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NXP Semiconductors
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BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power |
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Original |
PDF
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BLF6G22-45,112 |
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT608A |
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Original |
PDF
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BLF6G22-45,135 |
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT608A |
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Original |
PDF
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BLF6G22-45,112 |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB; Package: SOT608A (CDFM2); Container: Blister pack |
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Original |
PDF
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BLF6G22-45,112 |
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NXP Semiconductors
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BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power |
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Original |
PDF
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BLF6G22-45,135 |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB; Package: SOT608A (CDFM2); Container: Tape reel smd |
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PDF
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BLF6G22-45,135 |
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NXP Semiconductors
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BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power |
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PDF
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BLF6G22L-40BN |
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NXP Semiconductors
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Power LDMOS transistor |
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Original |
PDF
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BLF6G22L-40BN,112 |
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NXP Semiconductors
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BLF6G22L-40BN - Power LDMOS transistor, SOT1112A Package, Standard Marking, IC'S Tube - DSC Bulk Pack |
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BLF6G22L-40BN,118 |
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NXP Semiconductors
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BLF6G22L-40BN - Power LDMOS transistor, SOT1112A Package, Standard Marking, Reel Pack, SMD, 13" |
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BLF6G22L-40P |
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NXP Semiconductors
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Power LDMOS transistor |
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Original |
PDF
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BLF6G22L-40P,112 |
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NXP Semiconductors
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BLF6G22L-40P - Power LDMOS transistor, SOT1121A Package, Standard Marking, IC'S Tube - DSC Bulk Pack |
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