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    BLF6G20-75; Search Results

    BLF6G20-75; Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BLF6G20-75
    		NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 37.5 %; Frequency band: 1930 - 1990 GHz; Mode: CW EDGE ; Output power: 29.5 W; Package material: SOT502A ; Power gain: 19 dB Original PDF 86.7KB 12
    BLF6G20-75,112
    		NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 37.5 %; Frequency band: 1930 - 1990 GHz; Mode: CW EDGE ; Output power: 29.5 W; Package material: SOT502A ; Power gain: 19 dB; Package: SOT502A (LDMOST); Container: Blister pack Original PDF 86.7KB 12
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    BLF6G20-75; Price and Stock

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    Ampleon BLF6G20-75,112

    RF MOSFET LDMOS 28V SOT502A
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    DigiKey BLF6G20-75,112 Tray
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    Avnet Americas BLF6G20-75,112 Tube 60
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    NXP Semiconductors BLF6G20-75,112

    Discontinued
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    Vyrian BLF6G20-75,112 1,268
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