BLF6G20-110 |
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NXP Semiconductors
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Power LDMOS transistor |
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Original |
PDF
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BLF6G20-110 |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502A ; Power gain: 19 dB |
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Original |
PDF
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BLF6G20-110,112 |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502A ; Power gain: 19 dB; Package: SOT502A (LDMOST); Container: Blister pack |
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Original |
PDF
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BLF6G20-180P |
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Philips Semiconductors
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UHF power LDMOS transistor |
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Original |
PDF
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BLF6G20-180PN |
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NXP Semiconductors
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Power LDMOS transistor |
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Original |
PDF
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BLF6G20-180PN,112 |
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NXP Semiconductors
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Power LDMOS transistor, SOT539A (LDMOST), Blister pack |
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Original |
PDF
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BLF6G20-180RN |
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NXP Semiconductors
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Power LDMOS transistor |
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Original |
PDF
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BLF6G20-180RN,112 |
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NXP Semiconductors
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Power LDMOS transistor, SOT502A (LDMOST), Blister pack |
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Original |
PDF
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BLF6G20-230PRN |
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NXP Semiconductors
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AN10847 - Doherty RF performance using the BLF6G20-230PRN |
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Original |
PDF
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BLF6G20-230PRN |
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NXP Semiconductors
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Power LDMOS transistor |
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Original |
PDF
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BLF6G20-230PRN,112 |
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NXP Semiconductors
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BLF6G20-230PRN - Power LDMOS transistor, SOT539A Package, Standard Marking, IC'S Tube - DSC Bulk Pack |
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Original |
PDF
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BLF6G20-230PRN,118 |
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NXP Semiconductors
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BLF6G20-230PRN - Power LDMOS transistor, SOT539A Package, Standard Marking, Reel Pack, SMD, 13" |
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Original |
PDF
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BLF6G20-40 |
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NXP Semiconductors
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Power LDMOS transistor |
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Original |
PDF
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BLF6G20-40,112 |
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NXP Semiconductors
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BLF6G20-40 - Power LDMOS transistor, SOT608A Package, Standard Marking, Tube - DSC Bulk Pack |
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Original |
PDF
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BLF6G20-45 |
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NXP Semiconductors
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UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB |
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Original |
PDF
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BLF6G20-45 |
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NXP Semiconductors
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BLF6G20 - TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power |
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Original |
PDF
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BLF6G20-45 |
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Philips Semiconductors
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UHF power LDMOS transistor |
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Original |
PDF
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BLF6G20-45,112 |
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 19.2DB SOT608A |
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Original |
PDF
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BLF6G20-45,135 |
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 19.2DB SOT608A |
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Original |
PDF
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BLF6G20-45,112 |
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NXP Semiconductors
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UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB; Package: SOT608A (CDFM2); Container: Blister pack |
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Original |
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