BLF4G20-110B |
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Philips Semiconductors
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UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies |
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Original |
PDF
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BLF4G20-110B,112 |
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Philips Semiconductors
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RF FETs, Discrete Semiconductor Products, BASESTATION FINAL 2GHZ SOT502A |
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Original |
PDF
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BLF4G20LS-110B |
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Philips Semiconductors
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UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies |
|
Original |
PDF
|
BLF4G20LS-110B,112 |
|
Philips Semiconductors
|
RF FETs, Discrete Semiconductor Products, BASESTATION FINAL 2GHZ SOT502B |
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Original |
PDF
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BLF4G20LS-130 |
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NXP Semiconductors
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UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB |
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Original |
PDF
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BLF4G20LS-130,112 |
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NXP Semiconductors
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RF FETs, Discrete Semiconductor Products, BASESTATION FINAL 2GHZ SOT502B |
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Original |
PDF
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BLF4G20S-110B |
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Philips Semiconductors
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UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies |
|
Original |
PDF
|
BLF4G20S-110B,112 |
|
Philips Semiconductors
|
RF FETs, Discrete Semiconductor Products, BASESTATION FINAL 2GHZ SOT502B |
|
Original |
PDF
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