BLF4G10LS-120 |
|
Philips Semiconductors
|
UHF power LDMOS transistor |
|
Original |
PDF
|
BLF4G10LS-120,112 |
|
Philips Semiconductors
|
RF FETs, Discrete Semiconductor Products, BASESTATION FINAL 1GHZ SOT502B |
|
Original |
PDF
|
BLF4G10LS-160 |
|
NXP Semiconductors
|
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB |
|
Original |
PDF
|
BLF4G10LS-160,112 |
|
NXP Semiconductors
|
RF FETs, Discrete Semiconductor Products, BASESTATION FINAL 1GHZ SOT502B |
|
Original |
PDF
|