BLF3G21-30 |
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NXP Semiconductors
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UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: HF - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB |
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BLF3G21-30,112 |
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NXP Semiconductors
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UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: HF - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB; Package: SOT467C (LDMOST); Container: Blister pack |
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BLF3G21-6 |
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NXP Semiconductors
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BLF3G21-6 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-2, FET RF Power |
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BLF3G21-6 |
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NXP Semiconductors
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UHF power LDMOS transistor |
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Original |
PDF
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BLF3G21-6,112 |
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 15.5DB SOT538A |
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BLF3G21-6,135 |
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 15.5DB SOT538A |
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Original |
PDF
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BLF3G21-6,112 |
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NXP Semiconductors
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BLF3G21-6 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-2, FET RF Power |
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Original |
PDF
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BLF3G21-6,112 |
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NXP Semiconductors
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UHF power LDMOS transistor; Package: SOT538A (CDIP2); Container: Blister pack |
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Original |
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BLF3G21-6,135 |
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NXP Semiconductors
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BLF3G21-6 - UHF power LDMOS transistor, SOT538A Package, Standard Marking, Reel Pack, SMD, Large |
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Original |
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BLF3G21-6,135 |
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NXP Semiconductors
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UHF power LDMOS transistor; Package: SOT538A (CDIP2); Container: Tape reel smd |
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