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    BGD812,112 Price and Stock

    NXP Semiconductors BGD812,112

    IC AMP CATV SOT115J
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    Adam Technologies Inc MHR-26-HUAL

    Latched Box Header Right Angle 26Pos 2.54mm - Tray
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    Onlinecomponents.com MHR-26-HUAL 112
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    Essentra Components RX1313-4

    Cable Duct - Adhesive - 500.0 mm (19.685 in)
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    Onlinecomponents.com RX1313-4 112
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    Panduit Corp P18-38R

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    Onlinecomponents.com P18-38R 112
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    TE Connectivity RN73C2A69K8BTG

    Res Thin Film 0805 69.8K Ohm 0.1% 0.1W(1/10W) ±10ppm/°C Molded SMD Paper T/R
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    Onlinecomponents.com RN73C2A69K8BTG 112
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    BGD812,112 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BGD812,112 NXP Semiconductors BGD812 - RF/Microwave Amplifier, 40 MHz - 870 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT115J, 7 PIN Original PDF
    BGD812,112 NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier - Composite second order distortion (CSO): -60 dB; Composite triple beat (CTB): -58 dB; Description: 870 MHz, 18.5 dB gain Power Doubler ; Frequency range: 40 - 870 Hz; Gain: 18.5 dB; Return loss (input/output): 23/23 dB; Total current consumption (Itot): 410 mA; Package: SOT115J; Container: Bulk Pack Original PDF