| 
BF1102
 | 
 | 
NXP Semiconductors
 | 
BF1102 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SC-88, 6 PIN, FET RF Small Signal | 
Original | 
PDF
 | 
140.78KB | 
14 | 
| 
BF1102
 | 
 | 
Philips Semiconductors
 | 
Dual N-Channel Dual Gate MOS-FET | 
Original | 
PDF
 | 
127.02KB | 
16 | 
| 
BF1102
 | 
 | 
Philips Semiconductors
 | 
Dual N-channel dual gate MOS-FET | 
Original | 
PDF
 | 
155.13KB | 
12 | 
| 
BF1102,115
 | 
 | 
NXP Semiconductors
 | 
Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT363 (SC-88); Container: Tape reel smd | 
Original | 
PDF
 | 
127.01KB | 
16 | 
| 
BF1102,115
 | 
 | 
NXP Semiconductors
 | 
BF1102 - Dual N-channel dual gate MOS-FETs, SOT363 Package, Standard Marking, Reel Pack, SMD, 7" | 
Original | 
PDF
 | 
140.78KB | 
14 | 
| 
BF1102R
 | 
 | 
NXP Semiconductors
 | 
BF1102R - Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS | 
Original | 
PDF
 | 
140.78KB | 
14 | 
| 
BF1102R
 | 
 | 
Philips Semiconductors
 | 
Dual N-Channel Dual Gate MOS-FET | 
Original | 
PDF
 | 
127.02KB | 
16 | 
| 
BF1102R
 | 
 | 
Philips Semiconductors
 | 
Dual N-channel dual gate MOS-FET | 
Scan | 
PDF
 | 
389.26KB | 
10 | 
| 
BF1102R,115
 | 
 | 
NXP Semiconductors
 | 
Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT363 (SC-88); Container: Tape reel smd | 
Original | 
PDF
 | 
127.01KB | 
16 | 
| 
BF1102R,115
 | 
 | 
NXP Semiconductors
 | 
BF1102 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SMD, UMT6, SC-88, 6 PIN, FET RF Small Signal | 
Original | 
PDF
 | 
140.78KB | 
14 | 
| 
BF1102R,135
 | 
 | 
NXP Semiconductors
 | 
Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT363 (SC-88); Container: Tape reel smd | 
Original | 
PDF
 | 
127.01KB | 
16 | 
| 
BF1102R,135
 | 
 | 
NXP Semiconductors
 | 
BF1102R - Dual N-channel dual gate MOS-FETs, SOT363 Package, Standard Marking, Reel Pack, SMD, Large | 
Original | 
PDF
 | 
140.78KB | 
14 | 
| 
BF1102RT/R
 | 
 | 
NXP Semiconductors
 | 
Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS | 
Original | 
PDF
 | 
127.01KB | 
16 |