BF1100WR |
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NXP Semiconductors
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BF1100WR - Dual-gate MOS-FET - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS |
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BF1100WR |
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Philips Semiconductors
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Dual-Gate MOS-FET |
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BF1100WR |
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Philips Semiconductors
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Dual-gate MOS-FET |
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Scan |
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BF1100WR,115 |
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NXP Semiconductors
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Dual-gate MOS-FET - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
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BF1100WR,115 |
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NXP Semiconductors
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BF1100 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SMD, CMPAK-4, FET RF Small Signal |
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BF1100WRT/R |
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NXP Semiconductors
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Dual-gate MOS-FET - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS |
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BF1100WRTR |
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Philips Semiconductors
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Dual-gate MOS-FET |
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