BDX54B Search Results

Contextual Info: BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and

BOX 53C IC

Abstract: 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 VD151 54C20
Contextual Info: ON Semiconductor NPN BDX53B Plastic Medium-Power Complementary Silicon Transistors BDX53C PNP BDX54B . . . designed for general–purpose amplifier and low–speed switching applications. BDX54C • High DC Current Gain — • • • • hFE = 2500 Typ) @ IC = 4.0 Adc

Contextual Info: BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

ST BDX53C

Abstract: BDX53C Complementary Darlington Audio Power Amplifier BDX54C BDX54B 54B diode SILICON COMPLEMENTARY transistors darlington BDX53B
Contextual Info: BDX53B / BDX53C BDX54B / BDX54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES APPLICATIONS AUDIO AMPLIFIERS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 3 DESCRIPTION The BDX53B and BDX53C are silicon

BDX53

Contextual Info: BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1989 - REVISED MARCH 1997 Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C T0-220 PACKAGE TOP VIEW • 60 W at 25°C Case Temperature

BOX 53C darlington power transistor

Abstract: 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100 BDX53C MOTOROLA
Contextual Info: MOTOROLA Order this document by BDX53B/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain —

BDX53

Abstract: BDX53A BDX53B BDX53C BDX54 BDX54A BDX54B BDX54C
Contextual Info: BDX53/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATION POWER LINER AND SWITCHING APPLICATIONS • C om plem ent to BDX54, BDX54A, BDX54B and BDX54C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic

Contextual Info: BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 1 ■ Audio amplifiers

BDX54C

Abstract: BDX53 BDX53A BDX53B BDX53C BDX54 BDX54A BDX54B
Contextual Info: BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

BDX53C

Abstract: BDX53 BDX53A BDX53B BDX54 BDX54A BDX54B BDX54C
Contextual Info: BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

bdx54c equivalent

Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc

BDX53BFI

Contextual Info: SGS-THOMSON & *M IL iO T K S BDX53BFI BDX54BFI COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS: • GENERAL PURPOSE SWITCHING AND AMPLIFIER . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDX53BFI is silicon epitaxial-base NPN

bdx54 application

Abstract: BDX53A bdx53b bdx53c
Contextual Info: BDX53/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATION POWER LINER AND SWITCHING APPLICATIONS . Complement to BDX54, BDX54A, BDX54B and BDX54C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage

equivalents transistor bdx53 bdx54

Abstract: BDX54C BDX53 equivalent BDX53c BDX53 BDX53A BDX53B BDX54 BDX54A BDX54B
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C BDX53, 53A, 53B, 53C BDX54, 54A, 54B, 54C

bdx54a

Contextual Info: BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is currently available, but

BOX 53C IC

Abstract: BOX 53C darlington power transistor box 54c IC BDX53BG BDX54CG pin orientation for bdx53c transistor BDX54B
Contextual Info: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

BDX53

Abstract: BDX53B
Contextual Info: BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is currently available, but

BDX54BFP

Abstract: BDX53BFP BDX53BFI BDX54BFI
Contextual Info: BDX53BFI BDX54BFI COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS: ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDX53BFI is silicon epitaxial-base NPN

BDXS3C

Abstract: bdx64
Contextual Info: , Line, J. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDX53 PNP BDX54 BDX53A BDX54A BDX53B BDX54B BDX53C BDXS4C .designed for general-purpose amplifier and low speed switching

BOX 53C IC

Abstract: 1N5825 BDX53B BDX53C BDX54B BDX54C MSD6100
Contextual Info: ON Semiconductort NPN BDX53B Plastic Medium-Power Complementary Silicon Transistors BDX53C PNP BDX54B . . . designed for general–purpose amplifier and low–speed switching applications. BDX54C • High DC Current Gain — • • • • hFE = 2500 Typ @ IC = 4.0 Adc

BDX54

Abstract: BDX54C BDX54 circuit BDX53 BDX53A BDX53B BDX53C BDX54A BDX54B
Contextual Info: c i h ANSYS BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS m C TR O M C S LIMITED • Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C • 60 W at 25°C Case Temperature • 8 A Continuous Collector Current TO-220 PACKAGE TOP VIEW

BDX54

Abstract: BDX54A BDX54B BDX54C BDX54 circuit
Contextual Info: TEXAS IN STR -COPTO} t.B r D E jflT b ^ E b DOatibEB _ S 9 6 1 T 2 6 TEX A S IN S T R O P T Ò T T-33-31 62C 3 6 6 2 3 D BDX54, BDX54A, BDX54B, BDX54C P-N-P SILICON POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 • 60 W at 25°C Case Temperature

Contextual Info: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

dx53

Contextual Info: SGS-THOMSON MGMlLIOTIlMCt BDX53A/53B/53C BDX54A/54B/54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . BDX53B, BDX53C, BDX54B AND BDX54C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX53A, BDX53B and BDX53C are silicon epitaxial-base NPN power transistors in