BD244C Search Results

1N5825

Abstract: BD243B BD243C BD244B BD244C MSD6100
Contextual Info: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors BD243B BD243C * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B • Collector – Emitter Saturation Voltage — BD244C * VCE sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc

BD243

Abstract: BD244 BD244A BD244B BD244C
Contextual Info: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD243 Series TO-220 PACKAGE TOP VIEW ● 65 W at 25°C Case Temperature

CDIL 244C

Abstract: BD243 BD243B BD243C BD244 BD244A BD244B BD244C BD243A 243b
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD243, 243A, 243B, 243C BD244, 244A, 244B, 244C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS

si9663

Abstract: si96
Contextual Info: BD244, BD244A, BD244B, BD244C HARRIS SEMICOND SECTOR File Number SbE D • 674 4302271 DOMObTQ ÔDT « H A S Epitaxial-Base Silicon P-N-P VERSAWATT Transistors For Power-Amplif ier and High-Soeed-Switching Applications Features: ■ 66 W at 25°C case temperature

BD243

Abstract: BD243 transistor BD244A BD244B BD244C BD243A BD243B BD243C BD244 244A
Contextual Info: BD244/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-220 • Complement to BD243, BD243A, BD243B and BD243C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Emitter Voltage : BD244 : BD244A : BD244B : BD244C

Contextual Info: tSsml-donductot ZPioducti,/Jnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BD243B/BD243C BD244B/BD244C COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The BD243B and BD243C are silicon

r33pi

Abstract: BD243 b0244c R33p BD243C BD244 BD244A BD244B BD244C IEC134
Contextual Info: ri N AMER PHILIPS/DISCRETE _ S5E D • bbSB^l QQlTHn , Q ■ BD244; BD244A BD244B; BD244C Â r - 3 5 - ^ i SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in general amplifier and switching applications.N-P-N complements are BD243; 243A; 243B; and BD243C.

bd244

Abstract: BD243 BD244A BD244B BD244C
Contextual Info: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD243 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current B 1 ● 10 A Peak Collector Current C 2 ● Customer-Specified Selections Available

243b

Abstract: IC A 244 244A
Contextual Info: BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD243,243A, 243B, 243C BD244,244A, 244B, 244C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A 8 C D E F G H J K L M N MIN MAX

Contextual Info: BD243C BD244C Complementary power transistors Features • . Complementary NPN-PNP devices Applications ■ s ct Power linear and switching u d o Description 1 2 3 r P e TO-220 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor

Contextual Info: BD243B, BD243C NPN BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80−100 VOLTS 65 WATTS

BD243

Abstract: BD244 BD244A BD244B BD244C
Contextual Info: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD243 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current B 1 ● 10 A Peak Collector Current C 2 ● Customer-Specified Selections Available

1N5825

Abstract: BD243B BD243C BD244B BD244C MSD6100
Contextual Info: ON Semiconductort NPN Complementary Silicon Plastic Power Transistors BD243B BD243C * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B • Collector – Emitter Saturation Voltage — BD244C * VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc

K/O-187-BA

Contextual Info: N AUER PHIL IPS/DISCRETE - bbSBIBl 0 0 1 1 H 3 T 2SE D BD243; BD243A BD243B: BD243C T-3S-IJ SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in general amplifier and switching applica­ tions. P-N-P complements are BD244; 244A; 244B; and BD244C.

bd244

Abstract: TRANSISTOR BD244
Contextual Info: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD243 Series TO-220 PACKAGE TOP VIEW 65 W at 25°C Case Temperature 6 A Continuous Collector Current B 1 10 A Peak Collector Current C 2 Customer-Specified Selections Available

BD243

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BD243/A/B/C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD244, BD244A, BD244B and BD244C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 45 V : BD243A 60 V : BD243B 80 V : BD243C

BD243

Abstract: BD243A BD243B BD243C BD244 BD244A BD244B BD244C
Contextual Info: BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Power Bipolar Transistor

Abstract: BD244C transistor transistor BD244C BD244C
Contextual Info: BD244C High Power Bipolar Transistor TO-220, General Purpose Features: • PNP plastic power transistors. • General purpose amplifier and switching applications. TO-220 Plastic Package Dimensions Minimum Maximum A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D -

BD243C

Abstract: BD244C JESD97 Transistor bd243c
Contextual Info: BD243C BD244C COMPLEMENTARY SILICON POWER TRANSISTOR Features • STmicroelectronics PREFERRED SALESTYPES Applications ■ SWITCHING APPLICATIONS ■ LINEAR APPLICATIONS 3 1 Description 2 TO-220 The BD243C device is a silicon Epitaxial-Base NPN transistor mounted in Jedec TO-220 plastic

BD244C

Abstract: BD243C npn transistor bd243c complementary npn-pnp power transistors st bd243c JESD97 Transistor bd243c st bd244c morocco bd244c
Contextual Info: BD243C BD244C Complementary power transistors Features • . Complementary NPN-PNP devices Applications ■ Power linear and switching Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance

BD243C

Abstract: BD244C BD243B BD244B DSA0082460 morocco bd244c
Contextual Info: BD243B/BD243C BD244B/BD244C  COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear

bd243

Contextual Info: BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

bd243

Contextual Info: BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD243,243A, 243B, 243C BD244,244A, 244B, 244C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A a c M I T All E F G H J K L in _