BCR129W |
|
Infineon Technologies
|
NPN Silicon Digital Transistor |
|
Original |
PDF
|
BCR129W |
|
Infineon Technologies
|
Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: NPN; R1 (typ): 10.0 kOhm; R2: 0.0 k?; hFE (min): 120.0; Vi (on) (min): 0.5 2mA / 0.3V; |
|
Original |
PDF
|
BCR129WE6327 |
|
Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 |
|
Original |
PDF
|
BCR129WE6327 |
|
Infineon Technologies
|
Digital Transistors - R1= 10 kOhm |
|
Original |
PDF
|
BCR129WE6327HTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SOT323-3 |
|
Original |
PDF
|
BCR129WH6327 |
|
Infineon Technologies
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 |
|
Original |
PDF
|
BCR129WH6327XTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SOT323-3 |
|
Original |
PDF
|