3a331
Abstract: 3N153 datasheet SC10 ntc 3J683 3V152 FUSE SMD tn MMC Electronics America 2G300 NTC 22K 0805 3N33
Text: , TN23, TC20, TH20 30~2M 30~2.2k SC10 100 ~150k SC20 -40°C~+150°C MELF MN18, MH18 B , 3,298K 3,375K 3,425K 3,528K 3,657K 3,792K 3,985K R25 Resistance 40 100 150 B25/50 B , * 3A331* 3C471* 3D681* 3F102* 3 I 152* R25 Resistance 30 40 50 68 100 120 150 220 , 100 180 820 B25/50 B Value 2,700K 2,750K 2,750K 2,700K 2,750K 2,900K 3,250K B25/85 B , * R25 Resistance 40 50 56 68 100 150 220 330 470 680 1k 1.5k 2k 3.3k B25/50 B Value
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3a331
3N153 datasheet
SC10 ntc
3J683
3V152
FUSE SMD tn
MMC Electronics America
2G300
NTC 22K 0805
3N33
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Not Available
Abstract: No abstract text available
Text: MODEL ISC1210 Shielded Inductors VISHAY Molded Case 100 pcs, Rated Current Max DCR Ohms Max Q Min Frequency MHz Min ISC1210 R010KB25 ISC1210 R012K B25 ISC1210 R015K B25 ISC1210 R018K B25 ISC1210 RISC1210R027KB25 ISC121Q R033K B25 ISC1210 R039K B25 ISC1210 R047K B25 ISC1210 R056K B25 ISC1210 R068KB25 ISC1210 R082K B25 ISC1210 R10KB25 ISC1210 R12K , 2.30 2.50 2.70 3.10 3.30 5.10 5.90 8.00 100 100 110 120 50 50 50 50 45 45 45 40
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ISC1210
ISC1210
R010KB25
R012K
R015K
R018K
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SC10 ntc
Abstract: 3a331 2G300 3J683 3g50 3k102 019k 3H103 3L104 TH20
Text: , TN23, TC20, TH20 30~2M 30~2.2k SC10 100 ~150k SC20 -40°C~+150°C MELF MN18, MH18 B , 3,298K 3,375K 3,425K 3,528K 3,657K 3,792K 3,985K R25 Resistance 40 100 150 B25/50 B , * 3A331* 3C471* 3D681* 3F102* 3 I 152* R25 Resistance 30 40 50 68 100 120 150 220 , 100 180 820 B25/50 B Value 2,700K 2,750K 2,750K 2,700K 2,750K 2,900K 3,250K B25/85 B , * R25 Resistance 40 50 56 68 100 150 220 330 470 680 1k 1.5k 2k 3.3k B25/50 B Value
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10sec
SC10 ntc
3a331
2G300
3J683
3g50
3k102
019k
3H103
3L104
TH20
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R022
Abstract: R033K r082k R022K R056K IMC-1210
Text: MODEL IM C1210 100 Inductors M olded C ase VISHAY % ei Inductance .01 nH .012nH .015(iH .018nH .022nH .027jiH 033jiH .039nH ,047(iH ,056(iH .068(iH .082h H ,1(iH 4 "- 250 pcs. B»B 100 , ® (mm): Sid* View End Vl»w IMC1210 100 R010K RE4 IMC1210 100 R012K RE4 IMC1210 100 R015K RE4 IMC1210 1 < X > R018K RE4 IMC1210100 R022K RE4 IMC1210100 R027K RE4 IMC1210 100 R033K RE4 IMC1210 100 R039K RE4 IMC1210 100 R047K RE4 IMC1210 100 R056K RE4 IMC1210100 R068K RE4 IMC1210 100 R082K RE4 IMC1210 100
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C1210
012nH
018nH
022nH
027jiH
033jiH
039nH
450mA
R022
R033K
r082k
R022K
R056K
IMC-1210
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65SS2
Abstract: ISC1210 ISC-1210 vishay 40ss
Text: MODEL IS C 1210 S hielded Inductors Molded Case % el Inductance .01nH 4 toch 250 pcs. B ag 100 pcs. wâ Rated Current Max 810m A 750m A 720m A 690m A 640m A 610m A 585m A 530m A 495m A 485m A 475m A 460m A 450m A 630m A 600m A 580m A 565m A 500m A 475m A 465m A 460m A 455m A 450m A 450m A 400m A 390m A 370m A 350m A 320m A 290m A 270m A 250m A 220m A 210m A 205m A 195mA 185mA 175mA , Non-Magnetic .12jiH to 100 |i H Powdered Iron Case Material: Molded Epoxy Shielding: Electromagnetic ferrite
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195mA
185mA
175mA
165mA
155mA
150mA
115mA
105mA
100mA
1000MHz
65SS2
ISC1210
ISC-1210
vishay 40ss
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4n7j 100
Abstract: 4n7j R10J R015J R010J 6N8J 5n6j
Text: MODEL IMC 0603 Inductors Coated Case -% e l 4 `" b Inductance 1.5nH 1.8nH 2.2nH 2.7nH 3.3nH 3.9nH 4.7nH 5.6nH 6.8nH 8.2nH 10nH 12nH 15nH 250 pcs. IMC0603 1N5 RE4 IMC0603 1N8 RE4 IMC0603 2N2 RE4 IMC0603 2N7 RE4 IMC0603 3N3 RE4 IMC0603 3N9J RE4 IMC0603 4N7J RE4 IMC0603 5N6J RE4 IMC0603 6N8J RE4 IMC0603 8N2J RE4 IMC0603 R010J RE4 IMC0603 R012J RE4 IMC0603 R015J RE4 Bas 100 pcs. M Rated Current Max 500mA 500mA 500mA 500mA 500mA 450mA 450mA 430mA 430mA 400mA 400mA 400mA 350mA DCR Typical
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IMC0603
4n7j 100
4n7j
R10J
R015J
R010J
6N8J
5n6j
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1997 - tag 8442
Abstract: 3773 SMD tag 8852 9014 SMD RT-R25 B57620-c472 DIN 3021 siemens C472 smd 3773 B57620
Text: 620/2,2 k/+ C 620/4,7 k/+ C 620/10 k/+ C 620/22 k/+ C 620/47 k/+ C 620/ 100 k/+ C 620/220 k/+ R25 R/T-Kennlinie B25/ 100 Bestell-Nummer Typ Nr. 1304 1307 1011 2003 2101 , k 47 k 100 k 220 k +: J für R/RN = ± 5 % K für R/RN = ± 10 % M für R/RN = ± 20 % 1 , - - T + 273,15 T x + 273,15 x 100 RT RTx Tx T x , - 7 + 273,15 5 + 273,15 100 1 4,41 R 7 = 10,6873 k exp - 278,15 2
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B57620
hlzeitkonstante4100
RT/R25
B25/100
tag 8442
3773 SMD
tag 8852
9014 SMD
RT-R25
B57620-c472
DIN 3021
siemens C472
smd 3773
B57620
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4n7m
Abstract: r47j R033J 2500-m R22J R039J A540M
Text: MODEL IMC 0805 Inductors Molded Case Inductance 3.9nH 4.7nH 5.6nH 6.8nH 8.2nH 10nH 12nH 15nH 18nH 22nH 4 ,~ h y»- ^ ^ 2 5 0 pcs. . % el v ry / B a« 100 pcs. pa« Rated Current Max 540m A 540m A 540m A 540m A 540m A 540m A 535m A 520m A 480m A 465m A DCR Typical Self-Resonant Ohms Q Frequency ±30% 1.86Hz MHz Min .0 8 0 .0 8 0 .1 0 0 .1 2 0 .1 3 « .1 4 0 .1 8 0 .1 8 0 .2 2 0 .2 2 0 90 100 105 100 110 110 105 100 95 80 6000M H z 6000M H z 5500M H z 5500M H z 4700M H z
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6000M
5500M
4700M
3300M
3000M
2600M
4n7m
r47j
R033J
2500-m
R22J
R039J
A540M
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1996 - AS2731U5-5.0
Abstract: L22675-5.0 0/CMX7161
Text: 100 Vdc) Type R25 P25 âR/ RN TN âB/B δth Ïc Cth Ris No. of R/T characteristic ⦠M 185/ 47 k M 185/ 100 k 47 k 100 k 2910 2910 55/200/56 95 ± 3 %, ± 5 % 25 ± 1,5 % approx. 0,9 approx. 13 approx. 12 > 100 mW °C mW/K s mJ/K M⦠B25/ 100 , ) 2 â
 - - 273,15 â - -+- - - - - - - - - - - - - 100 ï£ T , +- - - - â - - 273,15 - - - - - - - - - 100 ï£ 7 - 273,15 5 + - -
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B57185
AS2731U5-5.0
L22675-5.0
0/CMX7161
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1997 - siemens C472
Abstract: Bauform 1008 1206 1602 LCD data sheet B57621 LCD 1602 16208 3773 SMD smd 3773 tag 8442 tag 8852
Text: % 25 ±3% ca. 5 ca. 10 ca. 50 mW °C mW/K s mJ/K Typ R25 R/T-Kennlinie B25/ 100 , Matsushita Components 47 B57621 C 621 Typ R25 R/T-Kennlinie B25/ 100 Bestell-Nummer C 621/ 100 k/+ C 621/150 k/+ C 621/220 k/+ C 621/330 k/+ C 621/470 k/+ C 621/680 k/+ 100 k , 4 Kennlinien Nummer 1006 T (°C) B25/ 100 = 3550 K RT/R25 (%/K) 5,8 48,503 55,0 5,7 36,524 50,0 5,6 27,639 45,0 5,5 21,021 40,0 1008 B25/ 100 = 3560 K RT/R25 (%/K) 6
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B57621
siemens C472
Bauform 1008 1206
1602 LCD data sheet
B57621
LCD 1602
16208
3773 SMD
smd 3773
tag 8442
tag 8852
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090Q
Abstract: IMC1812-27 IH33 IMC181247 IMC18124R7KRE4
Text: 1.0(iH 1.2nH 1.5(lH 1.8(iH 2.2fiH 2,7(iH 3.3nH 3.9(xH 4.7nH 5.6 jiH 6.8nH 8,2jiH Bas 100 pcs , I 0.152 I _L 4.5 . I .i._ T " .mm 11.27 1.00 ` 3.2 1*- i.io ¡asM , 82nH 100 |iH 120^H 150|iH 180h H 220 h H 270|xH 330nH 390|iH 470|iH 560nH 680fiH 820nH 1000nH 6.00 7 .0 0 8.00 8.00 9.00 9.50 100 120 140 160 260 300 300 350 400 FtashFax ¿1 no ' i fi pcnçucn
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C1812
190mA
180mA
170mA
160mA
150mA
140mA
135mA
130mA
120mA
090Q
IMC1812-27
IH33
IMC181247
IMC18124R7KRE4
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1997 - B57045
Abstract: DIN 3021-1 NTC Siemens B57045K103K B57045-K102-K B57045-K103-K tag 8852 B57045-K473-K RT 8214 B57045-K472-K B57045-K682-K
Text: , elektrisch isoliert Ris > 100 M (V = 100 V DC) Vis = 2500 V (Prüfdauer: 1 s) q Anschlußdrähte: Cu-Draht , /4,7 k/K K 45/6,8 k/K K 45/10 k/K 82 R25 R/T-Kennlinie B25/ 100 Bestell-Nummer , Matsushita Components B57045 K 45 Typ R25 R/T-Kennlinie B25/ 100 Bestell-Nummer K 45/33 k/K K 45/47 k/K K 45/68 k/K K 45/ 100 k/K K 45/150 k/K 33 k 47 k 68 k 100 k 150 k Nr , - - T + 273,15 T x + 273,15 x 100 RT RTx Tx T x
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B57045
Gewic50
RT/R25
B25/100
B57045
DIN 3021-1
NTC Siemens B57045K103K
B57045-K102-K
B57045-K103-K
tag 8852
B57045-K473-K
RT 8214
B57045-K472-K
B57045-K682-K
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ISC1812
Abstract: ISC-1812
Text: MODEL ISC1812 Shielded Inductors Molded Case B»8 Inductance I.OflH 1.2HH 1.5jiH 1.8|iH 2.2r H 2.7jiH 3.3(iH 3.9jiH 4.7jiH 5.6p.H 6.8jiH 8.2|iH 10nH 12(iH 15jiH 18|iH 22|aH 27|iH 33|iH 39nH 47nH 56(iH 68jiH 82nH IOOjiH 120nH 150nH 180^H 220(xH 270nH 330p.H 390jiH 47C^H 560fiH 680|iH 820nH 1000|iH 100 pcs. ISC18121R0KRE4 ISC18121R2K RE4 ISC18121R5KRE4 ISC18121R8KRE4 ISC1812 2R2K RE4 ISC1812 2R7K RE4 1X1812 3R3K RE4 ISC1812 3R9K RE4 ISC1812 4R7K RE4 ISC1812 5R6K RE4 ISC1812 6R8K RE4 ISC18128R2KRE4
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ISC1812
15jiH
68jiH
120nH
150nH
270nH
390jiH
560fiH
820nH
ISC18121R0KRE4
ISC-1812
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1997 - B57364-S509-M
Abstract: NTC 4,7 Siemens B57364-S259-M 19663 B57364S109M B57364-S409-M c 3866 m 1305 t 3866 B57364-S100-M
Text: TN B/B th c Cth B25/ 100 K 2800 2900 2900 3060 3060 3300 55/+ 170 5,1 ± 20 % 25 ±3% ca. 24 ca. 100 ca. 2400 CT 1) Koeffizienten für R(I) 1) µF k n 1000 0,766 1,30 1000 , ) 2 - - T + 273,15 T x + 273,15 x 100 , - - 7 + 273,15 5 + 273,15 100 1 4,41 R 7 = 10,6873 k exp - 278,15 2 - - 280,15 278,15 100 R 7 = 10,6873 k exp
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B57364
E69802)
B25/100
RT/R25
B57364-S509-M
NTC 4,7 Siemens
B57364-S259-M
19663
B57364S109M
B57364-S409-M
c 3866
m 1305
t 3866
B57364-S100-M
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1997 - stk 5392
Abstract: STK 5343 stk 1262 stk 7251 stk 5446 stk 490 110 stk 490 310 9641 stk 2068 transistor M152
Text: R/T-Kennlinie B25/ 100 Bestell-Nummer 1k 1,5 k 2,2 k 3,3 k 4,7 k 6,8 k 10 k 15 k , /T-Kennlinie B25/ 100 Bestell-Nummer M 891/ 100 k/+ M 891/150 k/+ M 891/220 k/+ M 891/330 k/+ M 891/470 k/+ 100 k 150 k 220 k 330 k 470 k Nr. 4003 2005 2005 2007 2006 K 4450 4600 , - - T + 273,15 T x + 273,15 x 100 RT RTx Tx T x , - 7 + 273,15 5 + 273,15 100 1 4,41 R 7 = 10,6873 k exp - 278,15 2
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B57891
B24936
stk 5392
STK 5343
stk 1262
stk 7251
stk 5446
stk 490 110
stk 490 310
9641
stk 2068
transistor M152
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1997 - 72608
Abstract: B57236-S100-M LT3973-3.3 NTC 120-9 187-1 B57236-S120-M UM 6164 19663 3844 b so 8 6767 die
Text: R/RN TN B/B th c Cth B25/ 100 K 2600 2800 2900 2900 2965 3065 3065 3165 3300 , ) 2 - - T + 273,15 T x + 273,15 x 100 , - - 7 + 273,15 5 + 273,15 100 1 4,41 R 7 = 10,6873 k exp - 278,15 2 - - 280,15 278,15 100 R 7 = 10,6873 k exp , Temperatur TN (siehe Datenblatt) in % Nenntoleranz des B-Wertes entspricht Datenblatt in % B25/ 100
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B57236
E69802)
236/10/M
236/12/M
236/16/M
236/20/M
236/25/M
236/50/M
236/80/M
B25/100
72608
B57236-S100-M
LT3973-3.3
NTC 120-9
187-1
B57236-S120-M
UM 6164
19663
3844 b so 8
6767 die
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1997 - STK 5343
Abstract: STK 1262 STK 412 770 stk 412 -410 stk 5446 stk 412 -420 stk 412 -770 stk 412 -230 stk 5112 stk 490 110
Text: R/T-Kennlinie B25/ 100 Bestell-Nummer K 164/15/+ K 164/22/+ K 164/33/+ K 164/47/+ K 164/68/+ K 164/ 100 /+ K 164/150/+ K 164/220/+ K 164/330/+ K 164/470/+ K 164/680/+ 15 22 33 47 68 100 150 220 330 470 680 Nr. 1203 1203 1203 1302 1303 1305 1305 1305 1306 , K 164/15 k/+ K 164/22 k/+ K 164/33 k/+ K 164/47 k/+ K 164/68 k/+ K 164/ 100 k/+ K 164/150 k/+ K 164/220 k/+ K 164/330 k/+ K 164/470 k/+ R/T-Kennlinie B25/ 100 Bestell-Nummer Typ
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B57164
R/T-Kenn50
RT/R25
B25/100
STK 5343
STK 1262
STK 412 770
stk 412 -410
stk 5446
stk 412 -420
stk 412 -770
stk 412 -230
stk 5112
stk 490 110
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NTC 50-11
Abstract: smd 3258 SMD 4435 4435 smd 1 307 329 082 thermistor NTC 50-11 4150K smd 1608 3670K K 3264
Text: ) 2.0 x 1.2 x 0.8 (inches 0805) 101 102 103 10 ¡¿10 1 = 100 ¥ 10 ¡¿10 2 = 1 K¥ 10 ¡¿10 3 = 10 K , 474_ _ LNSU10 _ 504_ _ LNSU10 _ 205_ _ Resistance @25oC 22§ 30§ 40§ 45§ 50§ 60§ 100 § 5 , § 85§ 100 § 120§ 150§ 330§ 470§ 33§ 68§ 100 § 220§ 1§ 470§ 500§ 2§ B constant , LNSU16 _ 504_ _ LNSU16 _ 205_ _ Resistance @25oC 22§ 30§ 40§ 45§ 50§ 60§ 100 § 5§ 10§ 1§ 2.2§ 4.7§ 5§ 6.8§ 10§ 10§ 22§ 44§ 2§ 2.2§ 2.7§ 3.3§ 10§ 33§ 47§ 50§ 58§ 68§ 85§ 100
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280oC
NTC 50-11
smd 3258
SMD 4435
4435 smd
1 307 329 082
thermistor NTC 50-11
4150K
smd 1608
3670K
K 3264
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LT3973-3.3
Abstract: 7835 thyristor 44071 9746 CT1 s464 k3765 B57237 E69802 NTC Siemens "m 831" S479-M
Text: approx. 17 approx. 90 approx. 1530 Pmax R/RN TN B/B th c Cth B25/ 100 K 2700 2800 2800 , Components 35 Standardized R/T Characteristics Number 1201 T (°C) B25/ 100 = 2700 K R T/R25 (% , / 100 = 2800 K R T/R25 (%/K) 27,119 5,5 20,748 5,3 16,035 5,1 12,521 4,9 1203 B25/ 100 = 2900 K R T/R25 (%/K) 30,252 5,6 22,966 5,4 17,612 5,2 13,650 5,0 1207 B25/ 100 = 2965 K , ,2739 0,2417 0,2140 0,1900 2,6 2,5 2,5 2,4 2,3 90,0 95,0 100 ,0 105,0 110,0 0
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B57237
E69802)
237/10/M
B25/100
T/R25
LT3973-3.3
7835 thyristor
44071
9746 CT1
s464
k3765
B57237
E69802
NTC Siemens "m 831"
S479-M
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B57164-K164
Abstract: 25809 B57164K 033090 b57164k10 siemens 62.19 B57164-K103
Text: K 164/15/+ K 164/22/+ K 164/33/+ K 164/47/+ K 164/68/+ K 164/ 100 /+ K 164/150/+ K 164/220/+ K 164/330/+ K 164/470/+ 15 22 33 47 68 100 150 220 330 470 Siemens Matsushita , . 150 mW °C mW/K s mJ/K B25/ 100 Ordering code K 2900 2900 2900 3000 3050 3200 , /68 k/+ K 164/ 100 k/+ K 164/150 k/+ K 164/220 k/+ K 164/330 k/+ K 164/470 k/+ 1k 1,5 k 2,2 k 3,3 k 4,7 k 6,8 k 10 k 15 k 22 k 33 k 47 k 68 k 100 k 150 k 220 k 330 k 470 k 1011
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B57164
B25/100
T/R25
B57164-K164
25809
B57164K
033090
b57164k10
siemens 62.19
B57164-K103
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2002 - Not Available
Abstract: No abstract text available
Text: 3. 2 k⦠to 470 k⦠R25 = 2.2 k⦠to 100 k⦠R25 = 2.2 k⦠to 100 k⦠±5%,  , ±2.5% ±1.5% 3740 63152 4090 63202 47 4090 63222 68 4190 63472 100 , ±0.75% ±0.75% B25/85 66272 47 4090 66472 100 4190 66103 470 4570 Series , ±1.5% 54272 10 3977 54472 47 4090 54103 100 4190 55103 55473 55104 54473 100 4190 Smallest packing quantity SPQ = 500 for all preferred leaded types Series 615 5
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R/R25
B25/85
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b25 SMD AD CONVERTER
Abstract: ERTJZEV104 ERTJ1VV473 ERTJ1VR103 ERTJ1VT152 ERTJ0ES104 ERTJ0EA101 ERTJ0ES ERTJ1VT102 ERTJ1VR333
Text: part max. ±0.03 Top cover tape 100 min. Vacant position 400 min. Pitch 2 mm (Punched , Temperature Range Rated Maximum Power Dissipation1 Z(0201) 33 mW 66 mW 100 mW Dissipation , 0.07138 95 0.1793 0.1688 0.1097 0.07980 0.07200 0.06307 0.06014 0.06028 100 0.1636 0.1528 0.09563 , 100 150 to 200 Design and specifications are each subject to change without notice. Ask factory , ., 3 min max. Number of cycles: 100 cycles R25 change : B Value change : Damp Heat Load R25
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EC157
b25 SMD AD CONVERTER
ERTJZEV104
ERTJ1VV473
ERTJ1VR103
ERTJ1VT152
ERTJ0ES104
ERTJ0EA101
ERTJ0ES
ERTJ1VT102
ERTJ1VR333
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2002 - Not Available
Abstract: No abstract text available
Text: impedance of 100 Ohm or single ended signal transmission with a impedance of 50 Ohm. Two different signal , data Differential impedance: 100 Ohm Single ended impedance: 50 Ohm Crosstalk: < 2% at 100 ps , Excellent Signal integrity Eye diagrams for 10 GBit/s with 100 mm FR4 trace. Vertical configuration
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2006 - ERTJ1VR333
Abstract: 4580K 8309 FA 4301 fb 4310 z crystal 856.3 ERTJ1VV473 k 2750 transistor NTC 4,7k ERTJ1VS104A
Text: 21.0 ±0.8 2.0 ±0.5 9.0 ±0.3 11.4 ±1.0 Top cover tape 100 min. Vacant position 400 min , mW 66 mW 100 mW Reference value when mounted on a glass epoxy board (1.6 mmT , 0.1688 0.1097 100 0.1636 0.1528 0.09563 105 0.1498 0.1387 0.08357 110 0.1377 0.1263 0.07317 , Resistance Nominal B value B25/50 Tolerance at 25 °C () Reference value B25/85 10 k ±1 %(F) or 100 k , Resistance Nominal B value B25/50 Tolerance at 25 °C () Reference value B25/85 ±1 %(F) 10 k or 100 k
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Not Available
Abstract: No abstract text available
Text: MODEL ISC1812 Shielded Inductors Molded Case R ated DCR C u rre n t O h m s Q M ax M ax M in I^el 4 Inductance 1.0pH 1.2pH 1.5pH 1.8pH 2.2pH 2.7pH 3.3pH 3.9pH 4.7pH 5,6pH 6.8pH 8.2pH 10pH 12pH 15pH 18pH 22pH 27pH 33pH 39pH 47pH 56pH 68pH 82pH 100pH 120pH 150pH 180pH 220pH 270pH 330p.H 390pH 470pH 560pH 680pH 820pH 1000pH 100 pcs. ISC18121R0KRE4 ISC18121R2K RE4 ISC18121R5KRE4 ISC18121R8KRE4 ISC1812 2R2K RE4 ISC18122R7KRE4 1X1812 3R3K RE4 1X1812
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ISC1812
100pH
120pH
150pH
180pH
220pH
270pH
390pH
470pH
560pH
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