The Datasheet Archive

Top Results (2)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
BQ25570RGRR BQ25570RGRR ECAD Model Texas Instruments Ultra low power harvester power management IC with boost charger, and nanopower buck converter 20-VQFN -40 to 125
BQ25570RGRT BQ25570RGRT ECAD Model Texas Instruments Ultra low power harvester power management IC with boost charger, and nanopower buck converter 20-VQFN -40 to 125

ATF-25570* datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
ATF-25570 ATF-25570 ECAD Model Agilent Technologies 0.5-10 GHz General Purpose Gallium Arsenide FET Original PDF
ATF25570 ATF25570 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

ATF-25570* Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - 5082-2830

Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
Text: -3003 . 7-82 ATF-13786 ATF-21170 ATF-21186 ATF-25170 ATF-25570


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PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 5082-2830 IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
1997 - HSCH-5337

Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
Text: -3003 . 7-82 ATF-13786 ATF-21170 ATF-21186 ATF-25170 ATF-25570


Original
PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 HSCH-5337 HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
ATF-35176

Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Text: -25100 ATF-26100 ATF-21170 ATF-21186 ATF-25170 ATF-25570 ATF-26150 ATF-26350 ATF-26550 ATF-25735 ATF


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PDF ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-35176 ATF-3507 ATF-35076 ATF-44100 ATF26550 ATF-13036 ATF-35576 ATF-35376
1997 - AT-41486

Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
Text: -3003 . 7-82 ATF-13786 ATF-21170 ATF-21186 ATF-25170 ATF-25570


Original
PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 AT-41486 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
1999 - GHZ micro-X Package

Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
Text: -13736 ATF-13786 ATF-26836 ATF-26884 ATF-10136 ATF-10236 ATF-10736 ATF-25170 ATF-25570 ATF-21170 ATF


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PDF AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
1997 - GHZ micro-X Package

Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
Text: ATF-25570 500 0.5 - 10 4 3.0 1.0 14.0 +20.5 70 mil stripline 5-60 ATF


Original
PDF ATF-36077 ATF-36163 OT-363 SC-70) ATF-44101 ATF-45101 ATF-45171 ATF-46101 ATF-46171 GHZ micro-X Package ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
AT12570-5

Abstract: AVANTEK s atf255 AVANTEK oscillator
Text: AVANTEK INC EGE D im n tb GG0bS7Q T ^A V A N TE K ATF-25570 (AT-12570-5) 0.5-10 GHz General Purpose Gallium Arsenide FET Features · High Output Power: 20.5 dBm typical Pi dB at 4 GHz · High Associated Gain: 14.0 dB typical at 4 GHz · Low Noise Figure: 1.0 dB typical at 4 GHz · Hermetic Gold-Ceramic Microstrip Package Description Avantek's ATF-25570 is a high performance gallium arsenide , : 34-6337 3-41 ATF-25570 , 0.5-10 GHz General Purpose Gallium Arsenide FET Absolute Maximum Ratings


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PDF ATF-25570 AT-12570-5) ATF-25570 310-371-Q717or310-371 AT12570-5 AVANTEK s atf255 AVANTEK oscillator
1998 - Not Available

Abstract: No abstract text available
Text: 0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typical P1 dB at 4 GHz • Low Noise Figure: 1.0 dB Typical at 4 GHz â , Description The ATF-25570 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor , dB 13.0 mmho 50 80 mA 50 100 150 V -3.0 -2.0 -0.8 2 ATF-25570 , Measurement: ATF-25570 Typical Performance, TA = 25°C 25 25 MSG 20 MSG 15 MAG 10 |S21


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PDF ATF-25570 ATF-25570 5965-8711E 5966-4977E
1998 - Not Available

Abstract: No abstract text available
Text: 0.5 ­ 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features · High Output Power: 20.5 dBm Typical P1 dB at 4 GHz · Low Noise Figure: 1.0 dB Typical at 4 GHz · High , nitride passivation assure a rugged, reliable device. 70 mil Package Description The ATF-25570 is a , V Pinch-off Voltage: VDS = 3 V, IDS = 1 mA dBm dB mmho mA V 2 ATF-25570 Absolute Maximum , : Liquid Crystal Measurement: jc = 300°C/W; TCH = 150°C 1 µm Spot Size[4] ATF-25570 Typical


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PDF ATF-25570 ATF-25570 5965-8711E 5966-4977E
1997 - IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Text: -3003 . 7-82 ATF-13786 ATF-21170 ATF-21186 ATF-25170 ATF-25570


Original
PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
1997 - ATF-25570

Abstract: No abstract text available
Text: 0.5 ­ 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features · High Output Power: 20.5 dBm Typical P1 dB at 4 GHz · Low Noise Figure: 1.0 dB Typical at 4 GHz · High , ATF-25570 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed , 1.3 mmho 80 mA 50 100 150 V 5-60 50 -3.0 -2.0 -0.8 ATF-25570 , : ATF-25570 Typical Performance, TA = 25°C 25 25 MSG 20 MSG 15 MAG 10 |S21|2 5


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PDF ATF-25570 ATF-25570
Not Available

Abstract: No abstract text available
Text: Thal H E W L E T T mE PACKARD LM 0 .5 -1 0 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 F eatures • High Output Power: 20.5 dBm Typical dB at 4 GHz • Low N oise , Gold-Ceramic M icrostrip Package D escription The ATF-25570 is a high perfor­ m ance gallium arsenide , ATF-25570 A bsolute Maximum Ratings Symbol v DS Vqs V qd Ids Pt Tch T st g Param eter , 0jc = 300°C/W; TCH= 150°C 1 ¡im Spot Size11 4 ATF-25570 Typical Performance, TA = 25°C S


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PDF ATF-25570 ATF-25570 44475A4
hp 502 transistor

Abstract: No abstract text available
Text: Whpl WÜEM PACKARD HEW LETT 0.5-10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 ity package. This device is designed for use in general · High Output Power: 20.5 dBm , based metallization systems and nitride passivation assure a The ATF-25570 is a high perfor mance , 4.0 GHz dBm 20.5 f = 4.0 GHz dB mmho 50 mA 50 V -3.0 13.0 80 100 150 -2.0 -0.8 2 ATF-25570 , information. ATF-25570 Typical Performance, TA = 25°C 25 20 MSG * |Sj «3'x N* » S < C 3 m


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PDF ATF-25570 ATF-25570 5965-8711E 59664977E hp 502 transistor
1997 - GHZ micro-X Package

Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
Text: ATF-25570 500 0.5 - 10 4 3.0 1.0 14.0 +20.5 70 mil stripline 5-60 ATF


Original
PDF ATF-13100 ATF-13336 ATF-13736 ATF-13786 ATF-26836 ATF-26884 ATF-10236 ATF-10736 ATF-25170 ATF-25570 GHZ micro-X Package micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Text: -25170* ATF-25570 * ATF-25735* ATF-26100* ATF-26150 ATF-26350 ATF-26550 ATF-26836* ATF-26884 ATF


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PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
AT12570-5

Abstract: at-12570
Text: W hol H EW LETT 1 "KM P A C K A R D ATF-25570 (AT-12570-5) 0.5-10 GHz General Purpose Gallium Arsenide FET Features · · · · High Output Power: 20.5 dBm typical Pi dB at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz Low Noise Figure: 1.0 dB typical at 4 GHz Hermetic Gold-Ceramic Microstrip Package GATE .040 70 mil Package 1.02 SOURCE .020 .508 Description The ATF-25570 is a high , = 3 V, Ids = 1 mA dBm dB mmho mA V 50 50 -3 .0 80 100 -2 .0 150 -0 .8 7-56 ATF-25570


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PDF ATF-25570 AT-12570-5) ATF-25570 AT12570-5 at-12570
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