AT001D6 Search Results

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator 3,6,12,24 dB Bit Values DC-1 GHz EDA lpha AT001D6-25 Features • 3, 6, 12, 24 dB Bits ■ Designed for Cellular Radio Applications ■ Low Cost Plastic 16 Lead SOIC 150 Mil Body ■ Surface Mount ■ Low DC Power Consumption

AT001D6-25

Contextual Info: GaAs IC 4 Bit Digital Attenuator 3 dB LSB DC–1 GHz AT001D6-25 Features SOIC-16 • Attenuation in 3 dB Steps to 45 dB 0.050 1.27 mm BSC PIN 16 ■ Low DC Power Consumption ■ Low Cost SOIC-16 Plastic Package 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR

AT001D6-25

Abstract: SOIC-16
Contextual Info: GaAs 1C 4 Bit Digital Attenuator 3 dB LSB DC-1 GHz ESAlpha AT001D6-25 Features SOIC-16 • Attenuation in 3 dB Steps to 45 dB 0.050 - 1 .2 7 mm BSC PIN 16 ■ Low DC Power Consumption ■ Low Cost SOIC-16 Plastic Package Description PIN The AT001D6-25 is an IC FET digital attenuator consisting

AT001D6-25

Abstract: AT001D6-25LF SOIC-16
Contextual Info: DATA SHEET AT001D6-25, AT001D6-25LF: GaAs IC 4-Bit Digital Attenuator 3 dB LSB 300 kHz–1 GHz Features Pin Out Attenuation in 3 dB steps to 45 dB ● Low DC power consumption ● Low-cost SOIC-16 plastic package ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator EHAlph 3 ,6 ,1 2 ,2 4 dB Bits DC-1 GHz AT001D6-31 Features • 3 ,6 , 12, 24 dB Bits ■ Designed for Military Applications ■ 14 Lead Metal Surface Mount Package ■ Low DC Power Consumption ■ Meets MIL-STD-883 Screening Requirements

Contextual Info: GaAs 1C 4 Bit Digital Attenuator 3 dB LSB DC-1 GHz ESAlpha AT001D6-25 Features SOIC-16 • Attenuation in 3 dB Steps to 45 dB 0.050 - 1 .2 7 m m BSC PIN 16 ■ Low DC Power Consumption ■ Low Cost SOIC-16 Plastic Package Description The AT001D6-25 is an IC FET digital attenuator consisting

Contextual Info: GaAs 1C 4 Bit Digital Attenuator 3 dB LSB DC-1 GHz EBAlpha AT001D6-25 Features SOIC-16 • Attenuation in 3 dB Steps to 45 dB 0.050 - 1.27 mm BSC PIN 16 ■ Low DC Power Consumption ■ Low Cost SOIC-16 Plastic Package Description PIN The AT001D6-25 is an IC FEET digital attenuator consisting

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator 3,6,12,24 dB Bits DC-1 GHz EBA lpha AT001D6—31 Features • 3, 6, 12,24 dB Bits ■ Designed for Military Applications ■ 14 Lead Metal Surface Mount Package ■ Low DC Power Consumption ■ Meets MIL-STD-883 Screening Requirements

Contextual Info: DATA SHEET AT001D6-25, AT001D6-25LF: GaAs IC 4-Bit Digital Attenuator 3 dB LSB 300 kHz–1 GHz Features Pin Out Attenuation in 3 dB steps to 45 dB ● Low DC power consumption ● Low-cost SOIC-16 plastic package ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C

AT001D6-25

Abstract: SOIC-16
Contextual Info: GaAs IC 4 Bit Digital Attenuator 3 dB LSB DC–1 GHz AT001D6-25 Features SOIC-16 • Attenuation in 3 dB Steps to 45 dB 0.050 1.27 mm BSC PIN 16 ■ Low DC Power Consumption ■ Low Cost SOIC-16 Plastic Package 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR

Contextual Info: DATA SHEET AT001D6-25: GaAs IC 4-Bit Digital Attenuator 3 dB LSB 300 kHz–1 GHz Features Pin Out Attenuation in 3 dB steps to 45 dB ● Low DC power consumption ● Low-cost SOIC-16 plastic package ● V8 16 1 V7 2 V6 3 Description V5 4 The AT001D6-25 is an IC FET digital attenuator consisting of four

Contextual Info: GaAs IC 4 Bit Digital Attenuator 3 dB LSB DC–1 GHz AT001D6-25 Features SOIC-16 • Attenuation in 3 dB Steps to 45 dB 0.050 1.27 mm BSC PIN 16 ■ Low DC Power Consumption ■ Low Cost SOIC-16 Plastic Package 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR

Contextual Info: Section 2 RF GaAs MMIC Products in Metal Packages Numerical Index Part Number Page Part Number Page Part Number Page AD004T2-00 2-44 AK006R2-01 2-30 AS006M1-01 2-8 AD004T2-11 2-44 AK006R2-10 2-30 AS006M1-10 2-a AE002M2-29 2-74 AK006R2-00 2-28 AS006M2-00 2-16

DSB3665-02

Contextual Info: High Power Multi-Throw UHF PIN Switches EHAlpha DSB3665-01, DSB3665-02, DSB3667-01 Features Hermetically Sealed Chips Stripline and T O -8 Can Packages SP2T and SP3T Designs 100 W att CW Operation Maximum Ratings 10 to 1000 MHz Operating Temperature: -6 5 °C to +150°C

Contextual Info: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■

Contextual Info: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control

Contextual Info: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C

Contextual Info: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■

Contextual Info: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias

SMS1526-10

Contextual Info: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity

Contextual Info: GaAs MMIC Two Watt High Linearity EH Alpha Cellular SPDT Switch in SS0P8 Package AS358-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10 V Control Voltages

Contextual Info: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability

Contextual Info: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features Broad Bandwidth Low DC Power Dissipation < 20 ^A Low Differential Phase Between Paths Meets M IL -S T D -88 3 Screening Requirements J2 Chip Size 30 x 39 x 8 Mils J3 Description The A D 004T2-00 is a GaAs 4 Port FET switch

at002d8-25

Abstract: soic 14
Contextual Info: MMICs Æ- Æ'- SOT 23 SOT 143 Control FETs in SOT Packages Insertion Loss max dB Isolation (min) dB Package Style Comments Part Number Frequency GHz AF002C1-32 D C - 2 .5 0.7 (0.2) dB 14(7) dB SOT 143 New, Low Cost AF002C1-39 DC - 2.5 0.7 (0.2) dB 14(7) dB