AS4LC256K16EO Search Results
AS4LC256K16EO Datasheets (11)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AS4LC256K16EO | Alliance Semiconductor | 3.3V 256K x 16 CMOS DRAM (EDO) | Original | 529.85KB | 25 | ||
| AS4LC256K16EO-35 | Alliance Semiconductor | 3.3V 256K x 16 CMOS DRAM (EDO) | Original | 531.45KB | 25 | ||
| AS4LC256K16EO-35TC | Alliance Semiconductor | 3.3V 256K x 16 CMOS DRAM (EDO) | Original | 531.44KB | 25 | ||
| AS4LC256K16EO-45JC | Alliance Semiconductor | 3.3V 256K x 16 CMOS DRAM (EDO) | Original | 661.58KB | 24 | ||
| AS4LC256K16EO-45TC | Alliance Semiconductor | 3.3V 256K x 16 CMOS DRAM (EDO) | Original | 661.58KB | 24 | ||
| AS4LC256K16EO-45TC | Alliance Semiconductor | 3.3V 256K x 16 CMOS DRAM (EDO) | Original | 531.44KB | 25 | ||
| AS4LC256K16EO-50TC | Alliance Semiconductor | 3.3V 256K x 16 CMOS DRAM (EDO) | Original | 661.58KB | 24 | ||
| AS4LC256K16EO-60JC | Alliance Semiconductor | 3.3V 256K x 16 CMOS DRAM (EDO) | Original | 661.58KB | 24 | ||
| AS4LC256K16EO-60JC | Alliance Semiconductor | 3.3V 256K x 16 CMOS DRAM (EDO) | Original | 531.44KB | 25 | ||
| AS4LC256K16EO-60TC | Alliance Semiconductor | 3.3V 256K x 16 CMOS DRAM (EDO) | Original | 661.58KB | 24 | ||
| AS4LC256K16EO-60TC | Alliance Semiconductor | 3.3V 256K x 16 CMOS DRAM (EDO) | Original | 531.44KB | 25 |
AS4LC256K16EO Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AS4LC256K16EO
Abstract: AS4LC256K16EO-35 AS4LC256K16E0-35JC RAS-28
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Original |
as4lc256k16eoas4lc256k16eo-35as4lc256k16eo3540-pin+5 | |
AS4LC256K16EOContextual Info: AS4LC256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh - 45/50/60 ns RAS access time |
Original |
as4lc256k16eo40-pinas4lc256k16eo-4540/44-pin+3 | |
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Contextual Info: AS4LC256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time |
Original |
as4lc256k16eoas4lc256k16eo-35as4lc256k16eo3540-pin+4 |