AS406M2-10
Abstract: AS406M2-01 SPDT FETs
Text: GaAs IC SPDT Switch Non-Reflective DC–6 GHz AS406M2-01, AS406M2-10 Features -01 • Independent Bias Control 0.220 5.59 mm 0.210 (5.33 mm) ■ High Isolation, Non-Reflective 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP.
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AS406M2-01,
AS406M2-10
AS406M2-01
AS406M2-10
9/99A
SPDT FETs
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SPDT FETs
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch DC-6GHz With Independent Bias Control Mi AS406R2-01, AS406M2-01 Features Individual Bias Control on Series and Shunt FETs Ability to Turn Both Arms On or Off Broadband DC to 6 GHz High Isolation Non-Reflective or Reflective Open
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AS406R2-01,
AS406M2-01
MIL-STD-883
AS406R2-01)
AS406M2-01)
SPDT FETs
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPDT Switch Non-Reflective DC-6 GHz ESAlpha AS406M2-01, AS406M2-10 -01 F eat ur e s • Independent Bias Control 0 .2 2 0 5 .5 9 m m ■ 0 .1 3 0 (3 .3 0 m m ) TYP. 0 .2 1 0 (5 .3 3 m m ) ■ High Isolation, Non-Reflective 0 .1 3 0 (3 .3 0 m m ) TYP.
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AS406M2-01,
AS406M2-10
AS406M2-01
3/99A
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPDT Switch Non-Reflective DC-6 GHz ESAlpha AS406M2-01, AS406M2-10 Features -01 • Independent Bias Control 0.220 5.59 mm 0.210 (5.33 mm) ■ High Isolation, Non-Reflective -0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP.
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AS406M2-01,
AS406M2-10
AS406M2-01
AS406M2-10
3/99A
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPDT Switch Non-Reflective DC-6 GHz EHAlpha AS406M2-01, AS406M2-10 Features -01 • Independent Bias Control 0.220 5.59 mm 0.210 (5.33 mm) ■ High Isolation, Non-Reflective «•-0.130 (3.30 mm) TYP. 0.063(1.60 mm)TYR ■ 7 Lead Hermetic Package
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AS406M2-01,
AS406M2-10
S406M
AS406M
3/99A
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Untitled
Abstract: No abstract text available
Text: Section 2 RF GaAs MMIC Products in Metal Packages Numerical Index Part Number Page Part Number Page Part Number Page AD004T2-00 2-44 AK006R2-01 2-30 AS006M1-01 2-8 AD004T2-11 2-44 AK006R2-10 2-30 AS006M1-10 2-a AE002M2-29 2-74 AK006R2-00 2-28 AS006M2-00 2-16
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AD004T2-00
AD004T2-11
AE002M2-29
AE002M4-05
AH002R2-11
AK002D2-11
AK002D4-11
AK002D4-31
AK002M4-00
AK002M4-31
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DSB3665-02
Abstract: No abstract text available
Text: High Power Multi-Throw UHF PIN Switches EHAlpha DSB3665-01, DSB3665-02, DSB3667-01 Features Hermetically Sealed Chips Stripline and T O -8 Can Packages SP2T and SP3T Designs 100 W att CW Operation Maximum Ratings 10 to 1000 MHz Operating Temperature: -6 5 °C to +150°C
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DSB3665-01,
DSB3665-02,
DSB3667-01
DSB3665
DSB3667
ch8-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
DSB3665-02
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC Power Amplifier [jHAIph in S O I C 16 Plastic Package AP103-64 Features • Saturated Power Up To 31 dBm ■ 6 Volt Operation ■ Efficiency Up To 65% ■ Idle Current Typically Less Than 80 mA ■ On Chip Bias Network Converts - 4 Volt Supplies
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AP103-64
SOIC16
AP103-64
ce8-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■
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DC-2000
of-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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Untitled
Abstract: No abstract text available
Text: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control
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AS103-59
AS103-59
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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Untitled
Abstract: No abstract text available
Text: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C
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AA038P1-00
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■
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AS006R2-01,
AS006R2-10,
AS004R2-08,
AS004R2-11
AS004R2â
AS006R2â
AS006R2-01)
AK006L1-01
AS004M2-11
AT002N5-00
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Untitled
Abstract: No abstract text available
Text: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias
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AH002R2-12
maxi-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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SMS1526-10
Abstract: No abstract text available
Text: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity
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AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
AK006M1-01
SMS1526-10
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability
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AS006M2-01,
AS006M2-10,
AS004M2-08,
AS004M2-11
AS006M2-10
MIL-STD-883
AK006L1-01
AT002N5-00
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features Broad Bandwidth Low DC Power Dissipation < 20 ^A Low Differential Phase Between Paths Meets M IL -S T D -88 3 Screening Requirements J2 Chip Size 30 x 39 x 8 Mils J3 Description The A D 004T2-00 is a GaAs 4 Port FET switch
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AD004T2-00,
AD004T2-11
004T2-00
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
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AF002C1-32
Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Text: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:
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AF002C1-32
AF002C1-32
AF002C1-39
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
E 212 fet
AS006M2-10
AD004T2-00
AD004T2-11
AK006R2-01
AS006M1-01
S443
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AS117-45
Abstract: AD004T2-00 AK006R2-01
Text: GaAs MMIC FET10 Watt Diversity Switch In SOW 16 Package DC-2.0 GHz • " " ■ ■ ■ « ■ ■ ■ 03 Alpha t v ■,. : v r - r ^ - .n I ^w A S 11 7 -4 5 Features High Power P - 1 dB > 10 Watts Integrated Decoder Chip that Provides Two Line Voltage Control
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FET10
AS117-45
DC-2000
DC-1000
04M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AD004T2-00
AK006R2-01
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pin diode limiter
Abstract: MMIC limiter AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
Text: gQAIpl Switch and Limiter Modules CSB7003-02 Features Stripline Mount Shunt Mounted Limiter in 50£2 Line Switch and Limiter Functions through 18 GHz Description This series of modules consists of a single PIN diode shunt mounted in a 50£2 hermetically sealed package.
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CSB7003-02
CSB7003-02.
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
pin diode limiter
MMIC limiter
AD004T2-00
AD004T2-11
AE002M2-29
AK006R2-00
AK006R2-01
AK006R2-10
AS006M1-01
AS006M1-10
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AFM02N5-55
Abstract: AD004T2-00 AD004T2-11 AFM02N5-56 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 S443 92260
Text: Low Noise Packaged GaAs MESFET Alph AFM02N5-55, AFM02N5-56 Drain Features Source • Low Noise Figure, 1.1 dB at 12 GHz ■ High Associated Gain, 8.0 dB at 12 GHz ■ High MAG, > 8.5 dB at 12 GHz ■ 0.25 ,um Ti/Pt/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package
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AFM02N5-55,
AFM02N5-56
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AFM02N5-55
AD004T2-00
AD004T2-11
AFM02N5-56
AK006R2-01
AK006R2-10
AS006M1-01
AS006M1-10
S443
92260
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AD004T2-00
Abstract: CVE7800-06 CVE7800-12 CVE7800-18 CVE7800-30 CVE7800-36 CVE7800-42 varactor high power 226 varactor
Text: GaAs Abrupt Varactor Diodes CVE7800 Series Features • Low Series Resistance - High Q ■ Low Capacitance Values for Applications at Millimeter W ave Frequencies ■ Available in Ceramic Packages with Low Parasitics and Also in Die Form Maximum Ratings Description
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CVE7800
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AK006L1-00
AD004T2-00
CVE7800-06
CVE7800-12
CVE7800-18
CVE7800-30
CVE7800-36
CVE7800-42
varactor high power
226 varactor
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AFP02N2-55
Abstract: AFP02N2 pt 8799 AFP02N2-56 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01
Text: EfiAlph Low Noise Packaged PHEMT AFP02N2-55, AFP02N2-56 Drain Features • Low Noise Figure, 0.75 dB at 12 GHz ■ High Associated Gain, 9.5 dB at 12 GHz ■ High MAG, > 10.0 dB at 12 GHz ■ 0.25 urn Ti/Pt/Au gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package
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AFP02N2-55,
AFP02N2-56
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AFP02N2-55
AFP02N2
pt 8799
AFP02N2-56
AD004T2-00
AD004T2-11
AK006R2-01
AS006M1-01
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DMK2307-000
Abstract: DMK2784-000 DMK2784 DMK2605-000 DMK50 mixer diodes DMK2606-000 DMK2791-000 DMK2860-000 diode 226
Text: EBAIphi GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features Low N oise Figure Low Series Resistance Excellent Cutoff, Low Junction Capacitance Ideal for Image Enhancem ent Mixers Passivated Planar Construction for Reliability Description A lpha’s series of gallium arsenide Schottky barrier
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AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AK006L1-00
AS004M2-08
DMK2307-000
DMK2784-000
DMK2784
DMK2605-000
DMK50
mixer diodes
DMK2606-000
DMK2791-000
DMK2860-000
diode 226
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c1842
Abstract: SMC HF 270
Text: Ceramic Packaged Surface Mount PIN Diodes SMC1800 Series Features • Industry Standard Outline ■ Hermetically Sealed Ceramic Package ■ Non-Rollable Surface Mount Design ■ Full Face PIN diode Chip Bond ■ For High Performance Switches and Attenuators
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SMC1800
soR2-11
AS006L1-00
AS006L1--
AS006L1
AS006L2-00
AS006L2-01
AS006M1-00
AS006M1-01
AS006M1-10
c1842
SMC HF 270
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