AS081C Search Results

AS081C100W

Contextual Info: AS081C100W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 100 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package

AS081C60W

Contextual Info: AS081C60W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 60 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package

AS081C40W

Contextual Info: AS081C40W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 40 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package

AS081C320W

Contextual Info: AS081C320W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 320 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package

AS081C480W

Contextual Info: AS081C480W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 480 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package

AS081C200W

Contextual Info: AS081C200W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 200 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package

Contextual Info: A D C 1 0731 ,A D C 1 0 7 3 2 , A D C 1 0 7 3 4 , A D C 1 0 7 3 8 A D C 10731/AD C 10732/AD C 10734/AD C 10738 10-Bit Plus Sign Serial I/O A/D Converters with Mux, Sam ple/Hold and Reference T ex a s In s t r u m e n t s Literature Number: SN AS081C a l Semiconductor

smd diode UJ 64 A

Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.