APT18M100S Search Results
APT18M100S Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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APT18M100S |
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N-Channel MOSFET | Original | 407.9KB | 4 |
APT18M100S Price and Stock
Microchip Technology Inc APT18M100SMOSFET N-CH 1000V 18A D3PAK |
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APT18M100S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure |
Original |
APT18M100B APT18M100S | |
mosfet 1000v 9A
Abstract: isl6260 APT18M100B APT18M100S MIC4452
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Original |
APT18M100B APT18M100S mosfet 1000v 9A isl6260 APT18M100B APT18M100S MIC4452 | |
APT18M100B
Abstract: APT18M100S MIC4452
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Original |
APT18M100B APT18M100S APT18M100B APT18M100S MIC4452 | |
Contextual Info: APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure |
Original |
APT18M100B APT18M100S |