APT14M100S Search Results
APT14M100S Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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APT14M100S |
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N-Channel MOSFET | Original | 265.64KB | 4 |
APT14M100S Price and Stock
Microchip Technology Inc APT14M100SMOSFET N-CH 1000V 14A D3PAK |
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APT14M100S | 1 |
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APT14M100S | 22 Weeks | 70 |
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APT14M100S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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APT14M100B
Abstract: APT14M100S MIC4452
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Original |
APT14M100B APT14M100S APT14M100B APT14M100S MIC4452 | |
Contextual Info: APT14M100B APT14M100S 1000V, 14A, 0.88Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure |
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APT14M100B APT14M100S | |
APT14M100B
Abstract: ultra fast recovery diode 500V APT14M100S MIC4452 Microsemi MOSFET 1000V POWER MOSFET Rise Time 1000V NS
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Original |
APT14M100B APT14M100S APT14M100B ultra fast recovery diode 500V APT14M100S MIC4452 Microsemi MOSFET 1000V POWER MOSFET Rise Time 1000V NS | |
Contextual Info: APT14M100B APT14M100S 1000V, 14A, 0.88Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure |
Original |
APT14M100B APT14M100S |