ACE2305B Search Results
ACE2305B Datasheets Context Search
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Contextual Info: ACE2305B P-Channel Enhancement Mode Field Effect Transistor Description The ACE2305B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM |
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ACE2305B ACE2305B |