9Y MARKING Search Results

murata SAW

Contextual Info: Data Sheet of SAW Components Note : Murata SAW Component is applicable for Cellular /Cordless phone Terminal relevant market only. Please also read caution at the end of this document. SAW FILTER FOR GSM850/GSM1900 (Rx) Murata part number : SAWEP881MCN2F00 (fc=881.5MHz)

murata SAW

Abstract: C 2120 Y
Contextual Info: SAW FILTER FOR GSM850/GSM1900 Rx Murata part number : SAWEP881MCN2F00 (fc=881.5MHz) Package Dimensions Specification Item 2.0±0.1 Specification -30 to 85°C -10 to 80°C 25±2°C typ. (9) (8) (7) (6) 881.5 MHz (10) (5) 9 Y 1 1.6±0.1 Nominal Center Frequency(fc)

murata SAW

Contextual Info: SAW FILTER FOR GSM850/GSM1900 Rx Murata part number : SAWEP881MCN2F00 (fc=881.5MHz) Package Dimensions Specification Item 2.0±0.1 Specification -30 to 85°C -10 to 80°C 25±2°C typ. (9) (8) (7) (6) 881.5 MHz (10) (5) 9 Y 1.6±0.1 Nominal Center Frequency(fc)

bl marking

Abstract: TA4006F 9y marking
Contextual Info: SILICON MONOLITHIC MOS TYPE LINEAR INTEGRATED CIRCUIT TA4006F U dì I : mm O T V TUNER VHF BF AMPLIFIER APPLICATIONS. + 0.2 O T V TÜNER UHF RF A M P L I F I E R A P P L I C A T I O N S . O F M TUNER RF A M P L I F I E R A P P L I C A T I O N S . 2.8-0.3 • O n accounI of this Device built in Bias Circuit,

PCN0513

Abstract: ALTERA PART MARKING stratix II EP2C15A EP2C20 EP2C35 EP2C50 EP2S15 EP2S60 EP2S90 9y marking
Contextual Info: Revision: 1.2.1 PROCESS CHANGE NOTIFICATION PCN0513 ADDITIONAL TSMC WAFER FABRICATION SITE Change Description: This is an update to PCN0513; please see the revision history table for information specific to this update. Beginning January 1, 2006, Altera started shipping 90-nm products from TSMC’s Fab 14 fabrication

BF963

Abstract: SIEMENS marking siemens MOSFET bf 434 BB515 D270K BF 963
Contextual Info: SIEMENS Silicon N Channel MOSFET Tetrode BF 963 • For high-gain, low-distortion VHF TV and FM mixer and input stages Type Marking Ordering Code BF 963 - Q62702-F904 Pin Configuration 1 2 4 3 S D G2 Package1 Gì X-plast Maximum Ratings Parameter Symbol Values

CMSH3-40

Abstract: CMPS5064 CMPD1001A marking db6 BCW71 AG marking 1FF MARKING CODE 8Y marking code k9 MARKING CODE 9k 6K MARKING CODE
Contextual Info: Marking Codes Marking Code Part Number Marking Code Part Number Marking Code Part Number 02D CMPS5064 5G BC808.40 91E CMPZ4706 1A BC846A 6A BC817.16 91F CMPZ4707 1B BC846B 6B BC817.25 91G CMPZ4708 1E BC847A 6B CMPF5484 91H CMPZ4709 1F BC847B 6B1 CMPF5485 91J

Contextual Info: r PART NUMBER 92503-X 02 SEE NOTE 6 1 4 .6 5 REF. ei i 2. g °? I Ö 3 < « £ a .31 £ PRESS-FIT HOLES HALE DIAMETER 0.65 AFTER PLATING DRILLED HOL£ 0.81 COPPER PLATING 0 .0 2 5 SnPb PLATING 0 .0 0 5 OPTIONAL ü 0.80 0.86 0.065 0.015 L -N tN N é -H n

diode zener ZD 36

Abstract: zener diode, zl 33 DIODE MARKING 9Y zener diode zg 36 diode marking 4Y diode zener ZL 30 diode zener ZD 15 diode zener ZL 15 zener diode BZ 22 zener diode, zl 22
Contextual Info: KDZ2.0W-36W SEM ICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA r CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES • Small Package : VSC • Sharp Breakdown Characteristic. • Normal Voltage Tolerance about ±6% .

FHT8550Y

Abstract: 9y marking fht8550g
Contextual Info: ࢅຫ৖ൈहࡍྯ૵਌ Low Frequency Power Amplifier Transistors FHT8550 Low Frequency Power Amplifier Transistors ࢅຫ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Suitable for Driver Stage of Small Motor 小馬達驅動 Complementary to FHT8050 與 FHT8050 互補

Contextual Info: r 1 I 2 PRODUCT NUMBER UNPLATED H OLES 84860—X001 'S -8 ; I . lû ^ ! i f ! I-« •11.95+g-^§ REF 1_ a - o to Li. ÜJ m Ö s: 00 O K CN CN ml QL RECOMMENDED HOLE PATTERN COMPONENT SIDE -H NOTES: ItM U l îf 8 ! =5 8. 4.00 — I — I r— 2.00 00 00

MYS 99

Abstract: STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics date code format st marking code st MYS 99 stmicroelectronics assembly site date code format LOT code stmicroelectronics marking code stmicroelectronics
Contextual Info: AN926 Application note Brand traceability Introduction To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a new marking and traceability scheme due to the sizes

MM1Z7V5B

Abstract: 9d bp MM1Z6V2 IR diodes 0B MM1Z3V9B 23265 MM1Z27B marking 0z sod
Contextual Info: MM1Z2V2B~MM1Z39B SILICON PLANAR ZENER DIODES Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • High reliability PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-123 and symbol

FHT8550Y

Abstract: fht8550g FHT8550
Contextual Info: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 Low Frequency Power Amplifier Transistors 低频功率放大三极管 PNP Silicon FHT8550 FEATURES 特点

marking code 0y

Abstract: 0z marking 9y marking diode sod-123 marking code 120 marking 0z MARKING CODE 0Z MM1Z11 MM1Z15B MM1Z16B MM1Z18B
Contextual Info: MM1Z2V2B~MM1Z39B SILICON PLANAR ZENER DIODES PINNING Features PIN • Total power dissipation: max. 500 mW • Small plastic package suitable for DESCRIPTION 1 Cathode 2 Anode surface mounted design 2 1 • Tolerance approximately ± 2% Top View Simplified outline SOD-123 and symbol

FHR8550Y

Abstract: FHR8550 FHR8550G FHR8550O 9y marking 9G SOT-89
Contextual Info: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 Low Frequency Power Amplifier Transistors 低频功率放大三极管 PNP Silicon FHR8550 FEATURES 特点

MM1Z10B

Abstract: MM1Z11B MM1Z12B MM1Z13B MM1Z15B MM1Z16B MM1Z39B
Contextual Info: TH97/2478 MM1Z2V7B - MM1Z39B TH09/2479 IATF 0060636 SGS TH07/1033 ZENER DIODES SOD-123 VZ : 2.7 to 39 V PD : 500 mW 1.65 1.55 0.6 0.5 2.7 2.6 1.15 1.05 * Total Power Dissipation 500 mW * Small Plastic Package suitable for surface mounted design * Tolerance approximately ± 2%

MM1Z27B

Abstract: MM1Z2V2 MM1Z18B
Contextual Info: MM1Z2V0B-MM1Z39B Zener Diodes VZ : 2.0 to 39 V PD : 500 mW SOD-123 Features 2.7 2.6 1.15 1.05 Mechanical Data 0.135 0.127 1.65 1.55 0.6 0.5 — Total Power Dissipation 500 mW — Small Plastic Package suitable for surface mounted design — Tolerance approximately ± 2%

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DW52C2V4LED02-DW52C39LED02 ZENER DIODE FEATURES z z Ultra-Small Leadless Surface Mount Package Ideally Suited fou Automated Assembly Processes Maximum Ratings Ta=25℃ unless otherwise specified

diode 9D Bp

Abstract: smd 18B ZENER diode
Contextual Info: MM1Z2V0B~MM1Z39B SILICON PLANAR ZENER DIODES Silicon planar zener diode in a small plastic SMD SOD-123 package PINNING DESCRIPTION PIN Features Total power dissipation: max.500 mW 1 Cathode 2 Anode Small plastic package suitable for surface mounted design

XN6543

Abstract: 2SC3904 9y marking NPN
Contextual Info: Composite Transistors XN6543 Silicon NPN epitaxial planer transistor Unit: mm +0.2 For low-noise amplification 2GHz band 2.8 –0.3 +0.25 1.5 –0.05 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage of

9y marking

Abstract: MM1Z10B MM1Z11B MM1Z12B MM1Z13B MM1Z15B MM1Z16B MM1Z18B MM1Z39B 9p marking
Contextual Info: Certificate TH97/10561QM MM1Z2V0B - MM1Z39B Certificate TW00/17276EM ZENER DIODES SOD-123 VZ : 2.0 to 39 V PD : 500 mW 1.65 1.55 0.6 0.5 2.7 2.6 1.15 1.05 * Total Power Dissipation 500 mW * Small Plastic Package suitable for surface mounted design * Tolerance approximately ± 2%

WBFBP-02C

Contextual Info: DW52CXXX Series 100 mW, WBFBP-02C Plastic-Encapsulate Zener Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES WBFBP-02C Ultra-Small Leadless Surface Mount Package Ideally Suited fou Automated Assembly Processes

BZT52-B22

Abstract: BZT52-B16 BZT52-B5V1 BZT52-B18 BZT52-B7V5 BZT52B2V4 BZT52B7V5 BZT52-B15 BZT52-B30
Contextual Info: BZT52B2V4 . BZT52B39 500 mW 2% BZT52B2V4 . BZT52B39 (500 mW 2%) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2012-11-08 0 .1 2 Maximum power dissipation Maximale Verlustleistung ±0.2 3.8