9P MARKING Search Results

Thick Film Chip Resistor Network

Abstract: MARKING CODE SQH
Contextual Info: NDEX Product Specifications: 1. FIXED RESISTORS _ METAL FILM RES. MFR Series METAL FILM RES.-Flame-Proof Type (FMF Series) METAL FILM RES. Professional Type (MFO Series) . METAL FILM RES. Professional & Flame-Proof Type (FMO Series) .

diode smd 9d bp

Abstract: smd diode 9j smd zener diode 12b 40 smd diode 9z diode smd 9z MARKING CODE 0Z smd marking 9z diode 9D Bp SMD MARKING 9f 153117
Contextual Info: MM1Z2V0B~MM1Z39B SILICON PLANAR ZENER DIODES Silicon planar zener diode in a small plastic SMD SOD-123 package PINNING DESCRIPTION PIN Features Total power dissipation: max.500 mW 1 Cathode 2 Anode Small plastic package suitable for surface mounted design

MCC 90

Contextual Info: MCC TM Micro Commercial Components BZT52C2V4LP THRU
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BZT52C39LP Features 250 mW Zener Diode 2.4 to 39 Volts • • • • Ultra-Small Leadless Surface Mount Package

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • •

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • •

Contextual Info: PRELIMINARY‡ 0.16µm Process 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP

Contextual Info: ADVANCE‡ 0.13µm Process 36Mb: 2 MEG x 18, 1 MEG x 32/36 PIPELINED, DCD SYNCBURST SRAM 36Mb SYNCBURST SRAM MT58L2MY18D, MT58V2MV18D, MT58L1MY32D, MT58V1MV32D, MT58L1MY36D, MT58V1MV36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP

Contextual Info: ADVANCE‡ 0.13µm Process 36Mb: 2 MEG x 18, 1 MEG x 32/36 FLOW-THROUGH SYNCBURST SRAM 36Mb SYNCBURST SRAM MT58L2MY18F, MT58V2MV18F, MT58L1MY32F, MT58V1MV32F, MT58L1MY36F, MT58V1MV36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP

Contextual Info: ADVANCE‡ 0.13µm Process 36Mb: 2 MEG x 18, 1 MEG x 32/36 PIPELINED ZBT SRAM 36Mb ZBT SRAM MT55L2MY18P, MT55V2MV18P, MT55L1MY32P, MT55V1MV32P, MT55L1MY36P, MT55V1MV36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP • High frequency and 100 percent bus utilization

Contextual Info: ADVANCE‡ 0.13µm Process 36Mb: 2 MEG x 18, 1 MEG x 32/36 PIPELINED, DCD SYNCBURST SRAM 36Mb SYNCBURST SRAM MT58L2MY18D, MT58V2MV18D, MT58L1MY32D, MT58V1MV32D, MT58L1MY36D, MT58V1MV36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP

MS-026

Abstract: MT55L128L18P1 MT55L128L18P1T-10 MT55L64L32P1 MT55L64L36P1 MT55L128
Contextual Info: 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, PIPELINED ZBT SRAM 2Mb ZBT SRAM MT55L128L18P1, MT55L64L32P1, MT55L64L36P1 3.3V VDD, 3.3V I/O FEATURES • • • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization

T4 3560 B

Abstract: alps encoder alps rotary Encoder alps encoder 12 alps Encoder switch 0/alps Encoder switch alps encoder 26 rotary encoder specifications alps Alps encoder b
Contextual Info: Customer: No. KK-2007-4798 alps europe distribution Date: Dec. 20,2007 Attention: Your ref. No.: Your Part No.: EC11J0924801 SPECIFICATIONS ALPS' ; MODEL: EC11J0924801_ Spec. No.: Sample No.: F 5 1 3 5 8 7 3 M RECEIPT STATUS RECEIVED By Date Signature

MT55L256L18P1T-10A

Abstract: MS-026 MT55L128L32P1 MT55L128L36P1 MT55L128V32P1 MT55L128V36P1 MT55L256L18P1 MT55L256L18P1T-10 MT55L256V18P1 84 FBGA thermal
Contextual Info: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM 4Mb ZBT SRAM MT55L256L18P1, MT55L256V18P1, MT55L128L32P1, MT55L128V32P1, MT55L128L36P1, MT55L128V36P1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • •

Contextual Info: PRELIMINARY‡ 0.16µm Process 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP

Contextual Info: 8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18D, MT58L256L32D, MT58L256L36D 3.3V VDD, 3.3V I/O, Pipelined, DoubleCycle Deselect FEATURES • • • • • • • • • • • • • • • 100-Pin TQFP*

Contextual Info: ADVANCE‡ 2 MEG x 8, 1 MEG x 18, 512K x 36 1.8V VDD, HSTL, DDRIIb4 SRAM 18Mb DDRII CIO SRAM MT57W2MH8J MT57W1MH18J MT57W512H36J 4-Word Burst FEATURES • 18Mb Density 2 Meg x 8, 1 Meg x 18, 512K x 36 • DLL circuitry for wide-output, data valid window

Contextual Info: 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2Mb SYNCBURST SRAM MT58L128L18F, MT58L64L32F, MT58L64L36F; MT58L128V18F, MT58L64V32F, MT58L64V36F 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP* • Fast clock and OE# access times

Contextual Info: 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM 4Mb ZBT SRAM MT55L256L18P1, MT55L256V18P1, MT55L128L32P1, MT55L128V32P1, MT55L128L36P1, MT55L128V36P1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • •

Contextual Info: 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM 4Mb ZBT SRAM MT55L256L18P1, MT55L256V18P1, MT55L128L32P1, MT55L128V32P1, MT55L128L36P1, MT55L128V36P1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • •

MS-026

Abstract: MT55L256L32P MT55L256L36P MT55L256V32P MT55L256V36P MT55L512L18P MT55L512V18P
Contextual Info: 8Mb: 512K x 18, 256K x 32/36 PIPELINED ZBT SRAM 8Mb ZBT SRAM MT55L512L18P, MT55L512V18P, MT55L256L32P, MT55L256V32P, MT55L256L36P, MT55L256V36P 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • • • •

Contextual Info: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 PIPELINED, SCD SYNCBURST SRAM 4Mb SYNCBURST SRAM MT58L256L18P1, MT58L128L32P1, MT58L128L36P1; MT58L256V18P1, MT58L128V32P1, MT58L128V36P1 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES 100-Pin TQFP1

sm 4109 smd

Abstract: smd fuse marking code 01X SMD ic 431c 8200902 8200902JX 93Z665DMQB45 94Q3
Contextual Info: i l AMD REVISIONS LTR H DATE DESCRIPTION Redrawn with changes. Delete vendor CAGE 27014 for PINs O U , 01L, 013, Q2J, 02L, 023, 03J, 03L, and 033. Add vendor CAGE 07933 for PINs 0 1 J, 01X , and 011. Change vendor CAGE 18324 similar PIN for devices 03J and 033.

Contextual Info: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/pSRAM Data Sheet (Advance Information)

Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 16Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES 100-Pin TQFP1 • High frequency and 100 percent bus utilization