9FB TRANSISTOR Search Results

transistor 9fb

Abstract: 9FC SOT23 marking code 9FB 9fc marking code marking 9fb 9fb transistor bc807 BC808 bc807 marking code transistor BC807
Contextual Info: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Sutable for AF-Driver stages and low power output stages • Complement to BC817/BC818 SOT-23  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector Emitter Voltage

BC808

Abstract: 9fb transistor bc807 BC817 BC818 026 pnp
Contextual Info: UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC817 / BC818 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted

smd 9FB

Abstract: marking 9fb SMD MARKING 9fB marking AF BC807 KC807-25 KC807-40
Contextual Info: Transistors SMD Type PNP Silicon AF Transistors KC807 BC807 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1

GSBC807

Contextual Info: ISSUED DATE :2005/06/08 REVISED DATE : GSBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The GSBC807 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Package Dimensions REF. A A1 A2 D E HE

bf314

Contextual Info: BF 314 NPN SILICON Ik lJ. PLANAR UBI HIGH FREQUENCY EPITAXIAL J TRANSISTOR m n mj»4 * ? j i MECHANICAL OUTLINE GENERAL DESCRIPTION ; The BF314 is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration.

9FC SOT23

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Collector Emitter Voltage

UTC marking

Contextual Info: UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC817 / BC818 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted

Transistor hFE CLASSIFICATION Marking CE

Abstract: D 526 SILICON TRANSISTOR marking 9fb
Contextual Info: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Sutable for AF-Driver stages and low power output stages • Complement to BC817/BC818 A B S O LU T E MAXIMUM RATINGS TA= 2 5 t Characteristic Symbol Collector Emitter Voltage

C5 MARKING TRANSISTOR

Abstract: BC807 BC808 marking code 9FB marking 9fb 9fb transistor
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to B C 817/BC 818 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollecto r E m itter Voltage

HBC807

Abstract: marking 9fb 9FC SOT23
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.

Contextual Info: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-ORIVER STAGES AND LOW POWER OUTPUT STAGES • Complement to BC817/BC818 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Collector Emitter Voltage: BC807

y-parameter

Abstract: MPS-H81 MPSH81
Contextual Info: MPS-H81 SILICON PNP SILICON E P IT A X IA L TRANSISTO R . designed fo r use in U H F /V H F oscillator applications. PNP SILICON TRANSISTOR C omplete y-Parameter Curves Low Collector-Em iitter Capacitance — Cce = 0.65 pF (Max) @ V CB = 10 Vdc High C urrent Gain — Bandwidth Product - @ I q = 6.0 mAdc

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818 Lead-free: BC807L/BC808L Halogen-free:BC807G/BC808G

amplifier FA-30

Abstract: KTC3194
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC3194 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES • Small Reverse Transfer Capacitance : Cre=0.7pF Typ. . • Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).

HBC807

Contextual Info: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.08.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.

marking code va transistors

Abstract: BC807 BC808 sot-23 Marking sj
Contextual Info: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • SUITABLE FO R A F D R IV E R S T A G E S AN D LOW PO W ER O U TPU T S TA G E S • Com plem en t to BC817/BC818 ABSOLUTE MAXIMUM RATINGS Ta = 25°C C h a ra c te r is tic

BC807

Abstract: marking code 9FB marking 9fb BC808 9FC SOT23
Contextual Info: BC807/BC808 BC807/BC808 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KTC3195

Abstract: transistor ph 45
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3195 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES • Small Reverse Transfer Capacitance : Cre=0.7pF Typ. . • Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS S O T-23 • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC817/BC 818 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector Em itter Voltage

9FC SOT23

Abstract: BC807 BC808
Contextual Info: BC807/BC808 BC807/BC808 Switching and Amplifier Applications 3 • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: MPSH81* CASE 29-04, STYLE 2 TO-92 TO-226AA MAXIMUM RATINGS ¡Symbol Value Unit Co llecto r-Em itter Voltage Rating VcEO -2 0 Vdc C o llecto r-Base Voltage VCBO -20 Vdc Em itter-Base Voltage v EBO - 3 .0 Vdc ,PD 350 2.81 mW m W *C T j- ^stg - 5 5 to +150

Contextual Info: KSC2758 NPN EPITAXIAL SILICON TRANSISTOR RF. MIXER FOR UHF TUNER S O T-23 . HIGH POW ER GAIN Typ. 17dB . LOW N F T y p . 2.8dB ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol Col lector-Base Voltage C ollector-E m ltter Voltage V cbO V cE O Rating

MPSH07A

Contextual Info: MPSH07A CASE 29-04, STYLE 1 TO-92 TO-226AA MAXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 30 Vdc Collector-Base Voltage v CBO 30 Vdc Em itter-Base Voltage v EBO 3.0 Vdc Pd 350 2.81 mW mW'°C TJ* f s tg - 55 to +150 °C Total Device D issipation

KTC3194

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3194 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES • Small Reverse Transfer Capacitance : Cre=0.7pF Typ. . • Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).