9B1 DIODE Search Results

Contextual Info: SKHI 21A R . Absolute Maximum Ratings Symbol Conditions R^954&5 R^9KK4&5 b9H1M?HB)( /9? ,H?BI '9B1@J( ?%&4O E5?H1 )&J5@B '9B1O 8D&J2: +H1?H1 ?(@L >H%%(51 +H1?H1 @'(%@J( >H%%(51 4@YO )0&1>2&5J K%([H(5>I G9BB(>19% (4&11(% '9B1@J( )(5)( @>%9) 12( E^_/ R@1( 9K %&)( @5$ K@BB 9K '9B1@J( )(>95$@%I

Contextual Info: SN74AVCA406 MMC, SD CARD, Memory Stick, SmartMedia, AND xD-Picture Card ±15-kV ESD-PROTECTED VOLTAGE-TRANSLATION TRANSCEIVER www.ti.com SCES615G – OCTOBER 2004 – REVISED DECEMBER 2005 FEATURES • • • • Transceiver for Memory Card Interface [MultiMediaCard MMC , Secure Digital (SD),

10A1

Abstract: C101 SN74AVCA406 SN74AVCA406GQCR SN74AVCA406ZQCR DAT00 DAT20
Contextual Info: SN74AVCA406 MMC, SD CARD, Memory Stick, SmartMedia, AND xD-Picture Card +/-15-kV ESD-PROTECTED VOLTAGE-TRANSLATION TRANSCEIVER www.ti.com SCES615E – OCTOBER 2004 – REVISED MARCH 2005 • FEATURES • • • Transceiver for Memory Card Interface [MultiMediaCard MMC , Secure Digital (SD),

Contextual Info: www.ti.com SN74AVCA406 MMC, SD CARD, Memory Stick, SmartMedia, AND xD-Picture Card ±15-kV ESD-PROTECTED VOLTAGE-TRANSLATION TRANSCEIVER SCES615H – OCTOBER 2004 – REVISED JANUARY 2007 FEATURES • • • • Transceiver for Memory Card Interface [MultiMediaCard MMC , Secure Digital (SD),

Contextual Info: www.ti.com SN74AVCA406 MMC, SD CARD, Memory Stick, SmartMedia, AND xD-Picture Card ±15-kV ESD-PROTECTED VOLTAGE-TRANSLATION TRANSCEIVER SCES615H – OCTOBER 2004 – REVISED JANUARY 2007 FEATURES • • • • Transceiver for Memory Card Interface [MultiMediaCard MMC , Secure Digital (SD),

Contextual Info: www.ti.com SN74AVCA406 MMC, SD CARD, Memory Stick, SmartMedia, AND xD-Picture Card ±15-kV ESD-PROTECTED VOLTAGE-TRANSLATION TRANSCEIVER SCES615H – OCTOBER 2004 – REVISED JANUARY 2007 FEATURES • • • • Transceiver for Memory Card Interface [MultiMediaCard MMC , Secure Digital (SD),

Contextual Info: SN74AVCA406 MMC, SD CARD, Memory Stick, SmartMedia, AND xD-Picture Card +/-15-kV ESD-PROTECTED VOLTAGE-TRANSLATION TRANSCEIVER www.ti.com SCES615F – OCTOBER 2004 – REVISED MAY 2005 • FEATURES • • • Transceiver for Memory Card Interface [MultiMediaCard MMC , Secure Digital (SD),

5B1 zener diode

Abstract: 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12
Contextual Info: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)

smd 5b1

Abstract: smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode
Contextual Info: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)

zener diode b27

Abstract: 5B1 zener diode B20 zener diode smd 5b1 zener Diode B22 diode zener B16 zener smd marking EA smd diode code B12 6b2 zener diode smd transistor marking ey
Contextual Info: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)

SO56-2

Abstract: 11A2 11B2 Diode 9b2 diode diode 1a2 10A1 10A2 11A1 12A1 12A2
Contextual Info: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH DESCRIPTION: FEATURES: − − − − − Enhanced N channel FET with no inherent diode to Vcc Low propagation delay

Contextual Info: 1. DATA SHEET BZX84B SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.3 - 39 Volts POWER 410 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .056(1.40) • Ideally Suited for Automated Assembly Processes .103(2.60) • Both normal and Pb free product are available :

Contextual Info: PI3B16233

PH 21 DIODE

Abstract: f21 diode 4b1 diode ER 900 16B1
Contextual Info: 3 Amp Encapsulated Assemblies ER Series D im en sio n s Inches o — I B i- C -I A B C D t D 1.31 0.44 1.06 0.47 M illim eters N otes 33.3 11.1 26.9 11.9 — Note 1: 1 / 4 '- 2 0 Mounting Stud Max. PRV Rating Per Circuit Arm Microsemi Catalog Number 100 200

Contextual Info: 3 Am p E ncapsulated Assem blies ER Series Dimensions Inches A U C D t Millimeters 1.31 0.44 1.06 0.47 Notes 33.3 11.1 26.9 11.9 Note 1: l/ 4 " - 2 0 Mounting Stud Microsemi Catalog Number ER*1B1 ER*2B1 ER*3B1 ER*4B1 ER.5B1 ER.6B1 ER*7B1 ER»8B1 ER»9B1 ER*10B1

zener 4B7

Abstract: ZENER SOD-323 ZENER SOD323
Contextual Info: DATA SHEET BZT52-B4V3S SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.3 to 39 Volts POWER 410 mWatts SOD-323 Unit: inch mm FEATURES • Planar Die construction .014(.35) • Zener Voltages from 4.3~39V .009(.25) .054(1.35) • 410mW Power Dissipation

zener 6c2

Abstract: sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C
Contextual Info: BZX84C-BS SERIES 4.7V to 36V SILICON PLANAR VOLTAGE REGULATOR DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * SOT-23 Package * Low Voltage General Purpose Voltage Regulator Diode SOT-23 MECHANICAL DATA * * * * * .052 1.325 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant

SOD-123 marking code 24

Abstract: marking code T 7 SOD-123 SOD-123 JEDEC zener 6b8
Contextual Info: DATA SHEET BZT52-B4V3 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.3 to 39 Volts POWER 410 mWatts SOD-123 Unit: inch mm FEATURES • 410mW Power Dissipation .110(2.8) .098(2.5) .028(0.7) .019(0.5) • Zener Voltages from 4.3~39V • Ideally Suited for Automated Assembly Processes

Contextual Info: PI3LVD400 3.3V, 4-Diferential Channel High-speed Switch with Integrated DDC Switch/Level Shiter Features Description  High-speed path can switch diferential signals such as TMDS or LVDS Pericom’s PI3LVD400 is a 4-diferential channel high-speed switch used for LVDS or TMDS signals. he PI3LVD400 can be

10B1

Abstract: 12B1 12Z1 16B1
Contextual Info: D im e n sio n s Inches A 2.25 C D E F 1.75 1.75 1.313 .875 tí Millimeters 57.2 —-44.5 44.5 33.35 22.23 N otes 1 Note 1: Mounting hole .172 4.37 mm Dia. Microsemi C atalog Number Three Phase Single Phase EH*1B1 EH»2B1 EH.3B1 EH»4B1 EH*5B1 EH*6B1 EH*7B1

5a1 DIODE

Abstract: 8A2 DIODE QS316209 QS3162209
Contextual Info: QS316209, QS3162209 QuickSwitch Products High-Speed CMOS 18-Bit Bus-Exchange Switch Q QUALITY SEMICONDUCTOR, INC. QS316209 QS3162209 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

Contextual Info: COMPANY CONFIDENTIAL PI3LVD400 3.3V, 4-Differential Channel High-speed Switch with Integrated DDC Switch/Level Shifter Features Description • High-speed path can switch differential signals such as TMDS or LVDS • VDD = 3.3V ±10% • ESD tolerance on video I/O pins is up to 12kV HBM

Contextual Info: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ

EH 14 A

Contextual Info: 12 Amp Encapsulated Assemblies EH Series - @ D F 4 » @ 1 !. A - <§> D im e n sio n s Inches A 2.25 C D E F 1.75 1.75 1.313 .875 tí Millimeters 57.2 —-44.5 44.5 33.35 22.23 N otes 1 nnru Note 1: Mounting hole .172 4.37 mm Dia.