991221TM2FXHD Search Results

FET MARKING QG

Abstract: FSS203 S203 marking S203 S20-3
Contextual Info: FSS203 N- Channel Silicon MOS FET TENTATIVE Features and Applications • Low ON-state resistance. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage 20 VDSS Gate to Source Voltage ±10 VGSS Drain Current DC 8 ID Drain Current(Pulse)

Contextual Info: FW233 N- Channel Silicon MOS FET TENTATIVE Features • Low ON-state resistance. • 4V drive. unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current(Pulse) Allowable power Dissipation VDSS VGSS