990309TM2FXHD Search Results
990309TM2FXHD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
marking DKContextual Info: 2SK2909 N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C VDSS VGSS ID PW≤10µS, dutycycle≤1% |
Original |
2SK2909 400mA 400mA 100mA 800mA K2909 990309TM2fXHD marking DK | |
marking fkContextual Info: 2SK2911 N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage |
Original |
2SK2911 150mA 250mA K2911 990309TM2fXHD marking fk |