990126TM2FXHD Search Results
990126TM2FXHD Datasheets Context Search
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Contextual Info: 2SK3335 N- Channel Silicon MOS FET Very High-Speed Switching TENTATIVE Features and Applications • Low ON-state resistance. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current (Pulse) |
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2SK3335 990126TM2fXHD |