990 LM Search Results

WORKING PRINCIPLE OF TEMPERATURE SENSOR LM35

Abstract: LM1205N PRINCIPLE OF TEMPERATURE SENSOR LM35 intelligent ambulance car controls the traffic light LM335 spice model LM2596 schematic constant current circuit diagram of crt monitor yoke coil F100K ECL Users Handbook BLOCK SCHEMATIC OF LM335 LM2406T
Contextual Info: National Semiconductor European Analog Seminar - 1997 Application Notes ELECTRO-MAGNETIC COMPATIBILITY AN-988 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 AN-990 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

EBC 40 capacitor

Abstract: PLL 2400 MHZ
Contextual Info: PBM 990 80 Bluetooth Baseband Controller with Integrated Flash Key features • Integrated Flash • Suited for embedded applications • Efficient interfaces. USB, UARTs, GPIOs, etc. • Point to multipoint, 7 slaves • Flexible input clock interface

Contextual Info: Frequency Mixer LMX-1481 Typical Performance Curves Conversion Loss Conversion Loss dB 9.0 8.7 LO = +7dBm 8.4 LO = +10dBm 8.1 LO = +13dBm 7.8 7.5 7.2 6.9 6.6 6.3 6.0 110 220 330 440 550 660 770 880 990 1100 RF Frequency (MHz) LO-IF Isolation LO-RF Isolation

Contextual Info: 5MM PCB Mountable Fuse Clip Receptacles 0.216 * 5.49 0.140 (3.56) i 0.216 (5.49) ? Detail Part Number Fuse Size Fuse Receptacle Type Material Thickness M ounting Hole Diameter A 990 5mm Standard w/Fuse Stop 0 .0 l6 "(0 .4 lm m ) 0.052"(1.32M M ) 1/4” (6.35mm) PCB Mountable Fuse Clip Receptacles

bd 36 930

Contextual Info: Integra Part Number: IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT IB0810M210 is designed for L-Band radar systems operating over the instantaneous band width of 870-990 MHz. While operating in class C mode this common base device supplies a

tegra 2

Abstract: IB0810M210 tegra BD 9280 CI 321 sar radar INTEGRA TECHNOLOGIES transistor BD 255
Contextual Info: Part Number: Integra IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M210 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C

Contextual Info: TOSHIBA {DISCRETE/OPTO} "H 990 16854 9097250 TOSHIBA <DISCRETE/OPTO> ^ashiht SEMICONDUCTOR D E I •=!DT 72 SD OGlbflS4 D f D T ^ S - cR TOSHIBA FIELD EFFECT TRANSISTOR Y T F 6 l'l SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SE INDUSTRIAL APPLICATIONS

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4117 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Unit in mm • Excellent h p E Linearity h F E (0.1mA)/hF E (2mA)=0.95(Typ.) • Low Noise: 200-700 990 • High hF E : Ö +T ! 2 ! 1 i ._

IB0810M12

Abstract: transistor Common Base configuration IB0810M12-REV-NC-DS-REV-NC method d 1071 transistor BD 325 bd 142 transistor 4620 Common collector configuration BD 54 transistor IB0810M
Contextual Info: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M12 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C

TLR333

Abstract: TIC33 TLG-333 TLR-335 TLG-334 TLG-332
Contextual Info: .TT deTJ t c h t e s o 9097250 TOSHIBA DISCRETE/OPTO oGiTsaa a 990 1722S OT-MVS TLG332, TLG333, TLG334, TLG335 • Green Color, 7.6 « • Applications: (0.3") Character Height Nuaerical and with Polarity Display. Transceiver or TV Channel Display, and Instrmeot Display etc.

CY7C185A

Abstract: 7C186A-35 7C186A-55 7C185A-55 7c186a 7C116 7C186A-25
Contextual Info: CYPRESS SEMICONDUCTOR MbE D B ESflSbb? OdDbbGM b E3CYP CY7C185A CY7C186A 'T M ^ V h -X V CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power High speed — 20 ns Low active power — 990 mW Low standby Power — 220 mW

amd 990

Abstract: ARM7 pin configuration PBA31305 16C550 bluetooth based data transfer system block diagram lock system using bluetooth PBA31301 uart 16c550 obd3 Bluetooth Module Ericsson
Contextual Info: PBM 990 90 Bluetooth Baseband Controller Key Features • Variable input clock frequency • Two 16C550 UART interfaces • Up to 10 bits general purpose IO • I2C interface • USB 2.0 Full-speed compliant interface • JTAG Debug & Test interface • Capability for embedded solutions

IB0810M100

Abstract: l-band 60 watt transistor x band radar U 855 D nc50
Contextual Info: Part Number: Integra IB0810M100 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode at Vcc=36V,

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- TT 9097250 TOSHIBA DISCRETE/OPTO DE | l [ H 7 E S G GDlbflbD 990 16860 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR i T F.6 2 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSI) INDUSTRIAL APPLICATIONS Unit in nun HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: Part Number: Integra IB0810M100 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode at Vcc=36V,

Contextual Info: dF TOSHIBA {DISCRETE/OPTÔJ 9097250 TOSHIBA ¿Tasiììht D I S C R E TE/OPTO ^ Q ^ S O 990 GGltflTH 16872 DTP-Sq-l TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 6 3 2 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSI) INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ Ti □ □ 1 7 4 Sa 9097250 TOSHIBA s DISCRETE/OPTO 990 17452 D T-Hi-n TLP543J, TLP545J GaAs IR E D & P H O T O - T H Y R I STOR Unit in ma The TOSHIBA TLP543J consists of a photthyristor optically coupled to a gallium

HB52RD168DB-A6D

Abstract: Hitachi DSA00164 Nippon capacitors
Contextual Info: HB52RD168DB-D 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components PC100 SDRAM ADE-203-990 (Z) Preliminary, Rev. 0.0 Dec. 16, 1998 Description The HB52RD168DB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Small Outline Dual In-line

Contextual Info: TOSHIBA {DIS CR ETE/O PT O} TT 9097250 TOSHIBA CDISCRETE/OPTO ¿Tashihi d F I t d t TSSO 990 16647 D O l b ^ ? DT-S^-ß TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 3 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE 7T— M O S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS

Contextual Info: TOSHIBA {DI SC RE TE /OPT O! TT 9097250 TOSHIBA DISCRETE/OPTO tfashìlu SEMICONDUCTOR D ^ I t DTTSSO 0Dlt71G 990 16710 DT-3<=l-V| TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 5 3 7 SILICON N CHANNEL MOS TYPE TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH: VOLTAGE SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA O I S C R E T E / O P T O J D e J i DTTESO 001ti71G 9097250 TOSHIBA DISCRETE/OPTO ¿ /o ó h ìh i 990 16710 DT-S^-VI SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE 2 S K 5 3 7 INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: HB52RD168DB-D 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M x 4 components PC100 SDRAM HITACHI ADE-203-990 (Z) Preliminary, Rev. 0.0 Dec. 16, 1998 Description The HB52RD168DB is a 16M x 64 x 1 bank Synchronous Dynamic RAM Small Outline Dual In-line

cdi dc/dc

Abstract: 2SK355 Vtih-20V
Contextual Info: TOSHIBA OISCRETE/OPTO} 9097250 TOSHIBA ~Ti 990 CDI S C R E T E / O P T O 16647 DOlbbM? b 1 ~ DT-3^-13 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR ¿^ùshìht D eT | B O T O S O 2 S K 3 5 5 SILICON N CHANNEL MOS TYPE < 7l~MO S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS

ITCH725D

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- 9097250 TOSHIBA ^aHììln CDI S C R E T E / O P T O “H DeTJ B O T O S O 990 16647 D 0 1 L t 47 b DT-3Ì-I3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 5 5 SILICON N CHANNEL MOS TYPE <7T-MOS ) TECHNICAL DATA INDUSTRIAL APPLICATIONS