990 LM Search Results

WORKING PRINCIPLE OF TEMPERATURE SENSOR LM35

Abstract: LM1205N PRINCIPLE OF TEMPERATURE SENSOR LM35 intelligent ambulance car controls the traffic light LM335 spice model LM2596 schematic constant current circuit diagram of crt monitor yoke coil F100K ECL Users Handbook BLOCK SCHEMATIC OF LM335 LM2406T
Contextual Info: National Semiconductor European Analog Seminar - 1997 Application Notes ELECTRO-MAGNETIC COMPATIBILITY AN-988 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 AN-990 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

EBC 40 capacitor

Abstract: PLL 2400 MHZ
Contextual Info: PBM 990 80 Bluetooth Baseband Controller with Integrated Flash Key features • Integrated Flash • Suited for embedded applications • Efficient interfaces. USB, UARTs, GPIOs, etc. • Point to multipoint, 7 slaves • Flexible input clock interface

Contextual Info: Frequency Mixer LMX-1481 Typical Performance Curves Conversion Loss Conversion Loss dB 9.0 8.7 LO = +7dBm 8.4 LO = +10dBm 8.1 LO = +13dBm 7.8 7.5 7.2 6.9 6.6 6.3 6.0 110 220 330 440 550 660 770 880 990 1100 RF Frequency (MHz) LO-IF Isolation LO-RF Isolation

tegra 2

Abstract: IB0810M210 tegra BD 9280 CI 321 sar radar INTEGRA TECHNOLOGIES transistor BD 255
Contextual Info: Part Number: Integra IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M210 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C

Contextual Info: TOSHIBA {DISCRETE/OPTO} "H 990 16854 9097250 TOSHIBA <DISCRETE/OPTO> ^ashiht SEMICONDUCTOR D E I •=!DT 72 SD OGlbflS4 D f D T ^ S - cR TOSHIBA FIELD EFFECT TRANSISTOR Y T F 6 l'l SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SE INDUSTRIAL APPLICATIONS

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4117 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Unit in mm • Excellent h p E Linearity h F E (0.1mA)/hF E (2mA)=0.95(Typ.) • Low Noise: 200-700 990 • High hF E : Ö +T ! 2 ! 1 i ._

IB0810M12

Abstract: transistor Common Base configuration IB0810M12-REV-NC-DS-REV-NC method d 1071 transistor BD 325 bd 142 transistor 4620 Common collector configuration BD 54 transistor IB0810M
Contextual Info: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M12 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C

TLR333

Abstract: TIC33 TLG-333 TLR-335 TLG-334 TLG-332
Contextual Info: .TT deTJ t c h t e s o 9097250 TOSHIBA DISCRETE/OPTO oGiTsaa a 990 1722S OT-MVS TLG332, TLG333, TLG334, TLG335 • Green Color, 7.6 « • Applications: (0.3") Character Height Nuaerical and with Polarity Display. Transceiver or TV Channel Display, and Instrmeot Display etc.

CY7C185A

Abstract: 7C186A-35 7C186A-55 7C185A-55 7c186a 7C116 7C186A-25
Contextual Info: CYPRESS SEMICONDUCTOR MbE D B ESflSbb? OdDbbGM b E3CYP CY7C185A CY7C186A 'T M ^ V h -X V CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power High speed — 20 ns Low active power — 990 mW Low standby Power — 220 mW

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- TT 9097250 TOSHIBA DISCRETE/OPTO DE | l [ H 7 E S G GDlbflbD 990 16860 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR i T F.6 2 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSI) INDUSTRIAL APPLICATIONS Unit in nun HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA {DISCRETE/OPTO} Tí D eT I t D ^ S G 990 16850 9097250 TOSHIBA DISCRETE/OPTO ^/oihlha üDlbñSG 3 D 1-39-13 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 4 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSIT) INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ Ti □ □ 1 7 4 Sa 9097250 TOSHIBA s DISCRETE/OPTO 990 17452 D T-Hi-n TLP543J, TLP545J GaAs IR E D & P H O T O - T H Y R I STOR Unit in ma The TOSHIBA TLP543J consists of a photthyristor optically coupled to a gallium

HB52RD168DB-A6D

Abstract: Hitachi DSA00164 Nippon capacitors
Contextual Info: HB52RD168DB-D 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components PC100 SDRAM ADE-203-990 (Z) Preliminary, Rev. 0.0 Dec. 16, 1998 Description The HB52RD168DB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Small Outline Dual In-line

Contextual Info: TOSHIBA {DIS CR ETE/O PT O} TT 9097250 TOSHIBA CDISCRETE/OPTO ¿Tashihi d F I t d t TSSO 990 16647 D O l b ^ ? DT-S^-ß TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 3 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE 7T— M O S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS

Contextual Info: TOSHIBA O I S C R E T E / O P T O J D e J i DTTESO 001ti71G 9097250 TOSHIBA DISCRETE/OPTO ¿ /o ó h ìh i 990 16710 DT-S^-VI SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE 2 S K 5 3 7 INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: HB52RD168DB-D 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M x 4 components PC100 SDRAM HITACHI ADE-203-990 (Z) Preliminary, Rev. 0.0 Dec. 16, 1998 Description The HB52RD168DB is a 16M x 64 x 1 bank Synchronous Dynamic RAM Small Outline Dual In-line

ITCH725D

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- 9097250 TOSHIBA ^aHììln CDI S C R E T E / O P T O “H DeTJ B O T O S O 990 16647 D 0 1 L t 47 b DT-3Ì-I3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 5 5 SILICON N CHANNEL MOS TYPE <7T-MOS ) TECHNICAL DATA INDUSTRIAL APPLICATIONS

SN74ACT2160

Contextual Info: SN74ACT2160 8K X 4 2-WAY CACHE ADDRESS COMPARATOR/DATA RAM D3365, JA N U A R Y 1 990-R E V IS E D JUNE 1990 A d dress to M atch Tim e . . . 17 ns Max FM PACKAGE TOP VIEW 2-W ay A rch ite c tu re S ig nifican tly Im proves Hit Rate IO Useful for Bus W atching

16824

Contextual Info: TOSHIBA { DI SC RETE/ OP TO} T í DE I SOTTESO ODlbñEH 2 9097250 TOSHIBA <DISCRETE/OPTO> 990 16824 D T - 3 9 - I3 fc*. ‘* //osili!iti SEMICONDUCTOR TO SH IBA F IE L D EFFEC T TR A N SISTO R Y T F 4 5 2 S IL IC O N TECHNICAL DATA N CHANNEL MOS T Y P E ff-M O S E

s47e

Abstract: 001755 ICE 47E MB501SL
Contextual Info: FU J I T S U M I C R O E L E C T R O N I C S 47E D • 3 7 4 1 7 b E DOlVTflS 3 ■ F M I M a y 1 990 Edition 3 .0 " FUJITSU DATASHEET D MB501SL SUPER LO W POW ER TWO MODULUS PRESCALER SUPER LOW POWER TWO MODULUS PRESCALER The Fujitsu MB501SL is a super low power version of MB501 two modulus prescaler used in

PTB Ex 80 1092

Contextual Info: Level measurement Magnetic float switch For horizontal installation Model HLS WIKA data sheet LM 30.02 Applications •■ Level measurement for almost all liquid media ■■ Pump and level control ■■ Chemical, petrochemical, natural gas, offshore, shipbuilding, machine building, power generating

Contextual Info: MT9D49 MICRON I 4 MEG X 9 DRAM MODULE TECHNOLOGY INC. DRAM MODULE 4 MEG x 9 4 MEGABYTE, 5V, FAST PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 30-pin single-in-lme m emory module SIMM • High-perform ance CM OS silicon-gate process • Single 5V ±10% power supply

Contextual Info: LED HIGH POWER M08 Product Series LED HIGH POWER M08 CoB Product Series Data Sheet Created Date: 08 / 22 / 2013 Revision: 6.0, 12 / 10 / 2013 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED HIGH POWER M08 Product Series 1. Description

TLR8101

Abstract: TLM8101 8101 opto 8101T tlg8101
Contextual Info: Ti TOSHIBA { D I S C R E T E / O P T 0> 9097250 TOSHIBA DISCRETE/OPTO DËT| ^ 7 2 5 0 □ 0 1 ? a ci7 □ j p 99D 17297 D'T-Ul-á[ T L R 8 101, T L G 8 101, T LM 8101 20-P0INT I-CHANNEL BA R POINT D ISPL A Y . State of Displays. TLR8101 : Red :10-Point TLG8101 i Green:10-Point