980327TM2FXHD Search Results
980327TM2FXHD Datasheets Context Search
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Contextual Info: FW231 N- Channel Silicon MOS FET TENTATIVE Features • Low ON-state resistance. • 2.5V drive. unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current(Pulse) Allowable power Dissipation VDSS |
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FW231 1000mm2 980327TM2fXHD |