947 TRANSISTOR Search Results

teltone m-947

Abstract: 8048 printer
Contextual Info: INNOVATING SOLUTIONS M-947 DTMF Receiver The T eltone M -947 com bines switched-capacitor and dig­ ital techniques to decode Dual-Tone M ultifrequency DTM F signals to four-bit binary data. N o prefiltering o f the DTM F signal is required. The M -947 is contained in a 22-pin DIP,

bo 947

Abstract: BDP947C dp947
Contextual Info: SIEMENS BDP947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration BDP 947 BDP 947 Q62702-D1335 1= B

bo 947

Contextual Info: tC e i x d n e SUSTAINED PRODUCTS _ lin iU M H f M -947 DTMF Receiver The Teltone M-947 combines switched-capacitor and dig­ ital techniques to decode Dual-Tone Multifrequency DTMF signals to four-bit binary data. No prefiltering o f the DTMF signal is required. The M-947 is contained in a 22-pin DIP,

Contextual Info: _ J \ _ BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.

Q62702-D1337

Abstract: BDP948 BDP950 Q62702-D1335 947 SOT-223
Contextual Info: BDP 947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP948, BDP950 PNP Type Marking Ordering Code Pin Configuration

BDS945

Abstract: m lc 945 J 3305 BDS943 BDS947 DDM317S
Contextual Info: PHILIPS INTERNATIONAL Product specification date of issue April 1991 711002b 0043175 2bl • PHIN BDS943/945/947 Data sheet status m SbE V Philips Components T -3 3-o s NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN NPN silicon epitaxial base transistors

VPS05163

Contextual Info: BDP 948, BDP 950 PNP Silicon AF Power Transistors
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP 947, BDP 949 NPN 2 1 Pin Configuration VPS05163 Type

Contextual Info: Philips Components D a ta sh e e t s ta tu s Product specification d a te o f is s u e April 1991 BDS943/945/947 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

BD946

Abstract: BD948 IN 3319 B
Contextual Info: BD944 BD946 BD948 PHILIPS INTERNATIONAL SbE ]> • 7H Q ô 2b 0043004 0T2 ■ P H IN SILICON EPITAXIAL BASE POWER TRANSISTORS T 33 ~ ~ P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD 943; 945 and 947.

b0948

Abstract: b0946 BD944 philips b0944 m lc 945 bd946 BD944 T 948 BD943 BD948
Contextual Info: BD944 BD946 BD948 PHILIPS IN TE RN AT IO NAL 5bE ]> • 711DûSb 00430ÔM SILICON EPITAXIAL BASE POWER TRANSISTORS 0 T2 ■ I P H I N T *33 ~ P-IM-P silicon transistors in a plastic envelope intended fo r use in audio ou tput stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.

1.8 degree unipolar stepper motor 332-082

Abstract: stepper motor driver board 332-098 bipolar stepper motor with four pin and 1.8 step 12v stepper motor 344631 working of speed control of dc motor using ir remote 1.8 degree unipolar stepper motor 12v stepper motor 1.8 step angle 34205 332-082 gearbox inertia
Contextual Info: Issued March 1997 232-5345 Data Pack B Stepper motors Data Sheet 7.5° stepper motors Size 1 RS stock no. 332-947 Size 2 (RS stock no. 332-953) Two 7.5° stepper motors each with four 12Vdc windings (coils) and permanent magnet rotor construction. Designed for unipolar drive, these motors are easily

1.8 degree unipolar stepper motor 332-082

Abstract: stepper motor driver board 332-098 rs 332-082 12v 7.5 stepper motor 332-947 332-082 RS 344-631 12v stepper motor 344631 342-051 UNIPOLAR stepper motor with step angle 1.8 1.8 degree BIPOLAR 4 PIN stepper motor
Contextual Info: Issued March 1995 019-470 Data Pack B Stepper motors Data Sheet 7.5° stepper motors Size 1 RS stock no. 332-947 Size 2 (RS stock no. 332-953) Two 7.5° stepper motors each with four 12Vdc windings (coils) and permanent magnet rotor construction. Designed for unipolar drive, these motors are easily

working of speed control of dc motor using ir remote

Abstract: 1.8 degree unipolar stepper motor 332-082 1.8 degree BIPOLAR stepper motor Stepper Motors 12V speed torque curve 1.8 degree unipolar stepper motor 12v 7.5 stepper motor 332-947 stepper motor driver board 332-098 1.8 degree BIPOLAR 4 PIN stepper motor RS 217-3611 12V unipolar STEPPER MOTOR 2a
Contextual Info: Issued March 1999 232-5345 Data Pack B Stepper Motors Data Sheet 7.5° stepper motors Size 1 RS stock no. 332-947 Size 2 (RS stock no. 332-953) Two 7.5° stepper motors each with four 12Vdc windings (coils) and permanent magnet rotor construction. Designed for unipolar drive, these motors are easily

gearbox inertia

Abstract: DC Motor motor inertia synchronous motor equations acceleration time of dc motor torquespeed 24Vd rack and pinion drives motor dc gearbox UNIPOLAR stepper motor with step angle 1.8 28 BY 48 unipolar stepper motor
Contextual Info: Data Pack B Issued November 2005 1504256229 Size 1 and 2 Stepper Motors Data Sheet 7.5° stepper motors 7.5° Stepper motors Size 1 RS stock no. 332-947 Size 2 (RS stock no. 332-953) Two 7.5° stepper motors each with four 12Vdc windings (coils) and permanent magnet rotor construction. Designed

1RF150

Abstract: AN-947 equivalent AN-947 10CGD capax Pelly 1c7 diode v1035a I435
Contextual Info: A P P L IC A T I O N N O T E 947 Understanding HEXFET Switching Performance B y S. Clemente, B.R. Pelly, A. Iild o rl Abstract A simple analytical technique for predicting the switching perform ance of the H E X F E T is presented. O osed-form solutions for the gate voltage, drain current, and

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

D 1991 AR

Abstract: BD945
Contextual Info: BD943 BD945 BD947 _ HILIPS INTERNATIONAL SbE ]> H 7110fl2ti 0043070 SOfl PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

bd947

Abstract: b0945 BD945 m lc 945 BD943 BD944
Contextual Info: BD943 BD945 BD947 H ILIPS INTERNATIONAL _ SbE J> H 711002b 0043070 SOfl • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

BD943

Contextual Info: BD943 BD945 BD947 _J \ _ SILICO N EPITAXIAL BASE POWER TRANSISTO RS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

VDC-3-54.32 B00

Contextual Info: 27.05.2011 10:11 Seite 13 Information Antriebstechnik_2011_05_27_Finale_EN_:Vorlage VarioDrive C ECI motor BG motor BCI motor 15 AC motors VARIODRIVE 3-phase external rotor motor Specifications 14 13 Representatives VARIODRIVE technical information VARIODRIVE Compact

BF 949 transistor

Abstract: transistor f 948 BF660W 660W
Contextual Info: SIEMENS BF660W PNP Silicon RF Transistor • For VHF oscillator applications Type Marking Ordering Code BF 660W LEs Pin Configuration Q62702-F1568 1=B Package 2=E 3=C SOT-323 Maximum Ratings Parameter Symbol Values Collector-emitter voltage ^CEO 30 Collector-base voltage

TIC55

Contextual Info: ERICSSON ^ PTB 20171 25 Watts, 935-960 MHz Cellular Radio RF Power Transistor D escription The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 915 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP

MP4004

Contextual Info: MP4004 SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Small Package by Full Molding. (SIP 10 Pin)

Contextual Info: TOSHIBA HN3C15FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C15FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC