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    942 DIODE SCHOTTKY Search Results

    942 DIODE SCHOTTKY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS15S40
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H Datasheet
    CUHS20F30
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 30 V, 2 A, US2H Datasheet
    CUHS15S60
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Datasheet
    CLS10F40
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 40 V, 1 A, CL2E Datasheet
    CUHS20F60
    Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Datasheet

    942 DIODE SCHOTTKY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    942 rectifier diode

    Contextual Info: tSENSITRON 203CNQ080 203CNQ100 SEMICONDUCTOR TECHNICAL DATA DATA SHEET, 942, REV. - PLASTIC POWER SCHOTTKY RECTIFIER 80/100 V, 200 A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:


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    203CNQ080 203CNQ100 942 rectifier diode PDF

    4E921

    Abstract: 40188 ODS-120 ODS-186 40298 4E920 ODS-276 schottky selection guide 4e925 4E969
    Contextual Info: COM SEMICONDUCTOR M/A-COM SEMICONDUCTOR PRODUCTS OPERATION SILICON SCHOTTKY MIXER DIODE CHIP & BEAM LEAD SELECTION GUIDE PRODUCTS OPERATION 1 Frequency Band ODS-990 1 Single Beam Lead (#4232)* ODS-965{2) Single Beam Lead (#4232)* ODS-942 ODS-264 Anti-Parallel


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    ODS-990 ODS-965 ODS-942 ODS-264 ODS-905 ODS-906 4E402L-906 4E402M-906 4E402H-906 4E929 4E921 40188 ODS-120 ODS-186 40298 4E920 ODS-276 schottky selection guide 4e925 4E969 PDF

    Schottky diode wafer

    Contextual Info: Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Case Style 942 Features ● ● ● ● ● ● Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions Three Diode Barrier Heights are Available Minimum Parasitics for Broadband Designs


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    MA40278, MA40279 Schottky diode wafer PDF

    942 DIODE schottky

    Contextual Info: an A M P com pany Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Features • • • • • • Case Style 942 Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions Three Diode Barrier Heights are Available


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    MA40278, MA40279 942 DIODE schottky PDF

    Contextual Info: an A M P com pany Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Features • • • • • • Case Style 942 Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions Three Diode Barrier Heights are Available


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    MA40278, MA40279 PDF

    Contextual Info: MA40278 and MA40279 Series Schottky Barrier Beam-Lead Anti-Parallel Pairs Features • SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING ■ HIGH RELIABILITY ■ CLOSELY MATCHED JUNCTIONS ■ THREE DIODE BARRIER HEIGHTS ARE AVAILABLE ■ DEVICES 100% TESTED ■ MINIMUM PARASITICS FOR


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    MA40278 MA40279 PDF

    Contextual Info: yflftC O H _ MA40278 and MA40279 Series Schottky Barrier Beam-Lead Anti-Parallel Pairs Features • SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING ■ HIGH RELIABILITY ■ CLOSELY MATCHED JUNCTIONS ■ THREE DIODE BARRIER HEIGHTS ARE AVAILABLE


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    MA40278 MA40279 PDF

    MA40278

    Contextual Info: M/A-COM SEMICOND t BRLNGTON 11 » • S h M E 2 m QQQ13QÔ 5 ■ M I C MA40278 and MA40279 Series Schottky Barrier Beam-Lead Anti-Parallel Pairs Features ■ SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING ■ HIGH RELIABILITY ■ CLOSELY MATCHED JUNCTIONS ■ THREE DIODE BARRIER HEIGHTS ARE


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    QQQ13QÔ MA40278 MA40279 PDF

    Contextual Info: a n AM P com pany Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Case Style 942 Features • • • • • • Small Physical Size for Microstrip M ounting High Reliability Closely M atched Junctions Three D iode Barrier Heights are Available


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    MA40278, MA40279 PDF

    Contextual Info: an A M P com pany Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V 2.00 Case Style 942 Features • • • • • • Small Physical Size for Microstrip M ounting High Reliability Closely M atched Junctions Three D iode Barrier H eights are Available


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    MA40278, MA40279 PDF

    Voltage Doubler application

    Abstract: voltage doubler Schottky Doubler application of voltage doubler Microwave detector diodes detector diode chip diode agilent 5964-4236E
    Contextual Info: Schottky Diode Voltage Doubler Application Note 956-4 Circuit Description Figure 1 shows a simple voltage doubler circuit that was assembled in Agilent Package 60 and tested at 2 GHz. In this version of the doubler, opposite polarity chips are needed. The


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    5964-4236E Voltage Doubler application voltage doubler Schottky Doubler application of voltage doubler Microwave detector diodes detector diode chip diode agilent 5964-4236E PDF

    Voltage Doubler application

    Abstract: application of voltage doubler Schottky Doubler Microwave detector diodes microwave detector diode 5082-0009 stub tuner matching
    Contextual Info: hH Schottky Diode Voltage Doubler Application Note 956-4 Circuit Description Figure 1 shows a simple voltage doubler circuit that was assembled in HP Package 60 and tested at 2 GHz. In this version of the doubler, opposite polarity chips are needed. The shunt chip


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    5964-4236E Voltage Doubler application application of voltage doubler Schottky Doubler Microwave detector diodes microwave detector diode 5082-0009 stub tuner matching PDF

    application of voltage doubler

    Abstract: Voltage Doubler application Microwave detector diodes Schottky Doubler angelo rf power detector voltage doubler Avago Technologies Schottky Avago Application Note 956-4 Schottky Diode Voltage Doubler microwave detector diode diode 1.e
    Contextual Info: Schottky Diode Voltage Doubler Application Note 956-4 Performance Diode detectors may be combined in various ways to produce higher output voltages than would be produced by a single diode. This note describes a microwave circuit that combines the detected output of two diodes to produce a detector with double the usual voltage sensitivity.


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    5964-4236E AV02-1440EN application of voltage doubler Voltage Doubler application Microwave detector diodes Schottky Doubler angelo rf power detector voltage doubler Avago Technologies Schottky Avago Application Note 956-4 Schottky Diode Voltage Doubler microwave detector diode diode 1.e PDF

    Voltage Doubler application

    Abstract: application of voltage doubler Schottky Doubler Voltage Doubler introduction rf power detector voltage doubler 5964-4236E stub tuner matching 5082-0023
    Contextual Info: Schottky Diode Voltage Doubler Application Note 956-4 Circuit Description Figure 1 shows a simple voltage doubler circuit that was assembled in HP Package 60 and tested at 2 GHz. In this version of the doubler, opposite polarity chips are needed. The shunt chip


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    5964-4236E Voltage Doubler application application of voltage doubler Schottky Doubler Voltage Doubler introduction rf power detector voltage doubler 5964-4236E stub tuner matching 5082-0023 PDF

    smd diode GW

    Abstract: diode ESM 315 K451
    Contextual Info: PD - 9.1647 International IOR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low Vp Schottky Rectifier • Generation V T echnology • Micro8 Footprint VDSS =


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    IRF7523D1 Rf7523d1 smd diode GW diode ESM 315 K451 PDF

    5082-2815

    Contextual Info: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS


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    44475fi4 1N5711 1N5712 1N5711, 1N5712, Figure12. 5082-2815 PDF

    diode hp 2835 schottky

    Abstract: hp 2800 diode mixer HSCH-3486 HSCH-5310 2.2 GHz local oscillator 5082-2817 HSCH3486 power semiconductor 1973 Hewlett-Packard microwave pin diode microwave mixer diode
    Contextual Info: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship


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    5082-2835 diode

    Abstract: "5082-2835" 5082-2817 HSCH-3486 HSCH-5310 5082-2755 noise diode Silicon Point Contact Mixer Diodes Microwave Mixer Diodes
    Contextual Info: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship


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    Waveform Clipping With Schottky

    Abstract: ne5532 thd NE5532 application notes 79L05 National Semiconductor AN20 78l05 IC hp5082-2810 78l05 national semiconductor 78L05 78L05 national
    Contextual Info: AN20 Application Note ADC INPUT BUFFER AND PROTECTION TECHNIQUES By Steven Green 51 Ω 78L05 +15V + 1 uF CR5 5.6V 2k Left Analog Input CR1 2k CR2 0.1 uF 2k 10 nF CS5336 CS5338 CS5339 51 Ω R2 27 10 nF CR3 -15V 0.1 uF 2 AINL 2k Right Analog Input 25 VL+ BAT-85


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    78L05 CS5336 CS5338 CS5339 BAT-85 HP5082-2810 79L05 MSAN-107: AN20REV2 Waveform Clipping With Schottky ne5532 thd NE5532 application notes 79L05 National Semiconductor AN20 78l05 IC hp5082-2810 78l05 national semiconductor 78L05 78L05 national PDF

    MOSFET P-channel SOT-23

    Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
    Contextual Info: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26


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    2N7000 2N7002L MOSFET60 OT-23 BS107, BS107A BS108 BS170 NUD3124 NUD3160 MOSFET P-channel SOT-23 NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N PDF

    Contextual Info: VFM STEP-UP DC/DC CONVERTER CONTROLLER NO. EA-042-130502 RN5RY202 OUTLINE The RN5RY202 Series are CMOS - based VFM chopper Control ICs for step-up DC/DC converter with an external power transistor featuring high output voltage accuracy and low supply current. Each of the RN5RY202 Series ICs


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    EA-042-130502 RN5RY202 RN5RY202 Room403, Room109, 10F-1, PDF

    Contextual Info: R1 2 4 0 x SERI ES 1.2A, 30V Step Down DC/DC converter NO.EA-190-111123 OUTLINE The R1240x series are CMOS-based Step-down DC/DC converter with internal Nch high side Tr. 0.35Ω , which can provide the maximum 1.2A output current. The ICs consists of an Oscillator, a PWM control circuit, a


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    EA-190-111123 R1240x Room403, Room109, 10F-1, PDF

    Contextual Info: VFM STEP-UP DC/DC CONVERTER CONTROLLER NO. EA-030-130502 RN5RYxx1 SERIES OUTLINE The RN5RYxx1 Series are CMOS-based VFM Control ICs for step-up DC/DC converter with an external driver transistor featuring high output voltage accuracy and low supply current. Each of the RN5RYxx1 Series ICs


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    EA-030-130502 OT-23-5( Room403, Room109, 10F-1, PDF

    R1240N

    Abstract: KTS500B106M55N0T00 R1240N001-TR-FE R1240N001 GRM31CR71E106K NIPPON CAPACITORS MA24D60 CHEMICON Current is small or the Output Voltage is unstable irp 942
    Contextual Info: R1240x SERIES 1.2A, 30V Step Down DC/DC converter NO.EA-190-101006 OUTLINE The R1240x series are CMOS-based Step-down DC/DC converter with internal Nch high side Tr. 0.35Ω , which can provide the maximum 1.2A output current. The ICs consists of an Oscillator, a PWM control circuit, a


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    R1240x EA-190-101006 Room403, Room109, 10F-1, R1240N KTS500B106M55N0T00 R1240N001-TR-FE R1240N001 GRM31CR71E106K NIPPON CAPACITORS MA24D60 CHEMICON Current is small or the Output Voltage is unstable irp 942 PDF