M54HC132
Abstract: M54HC595KG M54HC138KG 920112001F
Contextual Info: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage • Low power DC dissipation: 1 µA max. at 25 °C • High speed tPD = 8 ns typ. at 25 °C • Symmetrical outputs characteristics
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m54hcxxxm54hctxxxflat-14dil-14+7flat-16dil-16docid17367m54hc132m54hc595kgm54hc138kg920112001f
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940900703F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC
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54HC4053
Abstract: 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed TPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC
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m54hcxxxm54hctxxxflat-14dil-14+16flat-16dil-16flat-20dil-20flat-24dil-2454hc4053940104801f940900701f54hc08940806401fm54hc245k54hc273920110501f940104701f920110601f
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940900701F
Abstract: 54HC4053 54HC273 940501301F 920305001F 940104801F 920110601F 54HC08 920112001F 940806401F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC
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m54hcxxxm54hctxxxflat-16dil-16+12flat-14dil-14940900701f54hc405354hc273940501301f920305001f940104801f920110601f54hc08920112001f940806401f
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940806401F
Contextual Info: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage Low power DC dissipation: 1 µA max. at 25 °C High speed tPD = 8 ns typ. at 25 °C Symmetrical outputs characteristics
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m54hcxxxm54hctxxxflat-14dil-14+4flat-16dil-16docid17367940806401f
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mlt 22
Abstract: MCT thyristor IGBT DRIVER SCHEMATIC chip MOS-Controlled Thyristor k 3918 k 3918 regulator HIP2030 IGBT DRIVER SCHEMATIC mct thyristor datasheet photo thyristor
Contextual Info: Harris Semiconductor No. AN9408.2 Harris Intelligent Power November 1994 The HIP2030 MCT/IGBT Gate Driver Provides Isolated Control Signals To Switch Power Devices Author: J. K. Azotea Introduction The Harris Fiber-Optic Isolated Gate Driver HFOIGD is designed to operate reliably at high isolation voltages, dv/dt’s,
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an9408hip2030hip2030evaldb307a+9mlt 22mct thyristorigbt driver schematic chipmos-controlled thyristork 3918k 3918 regulatorigbt driver schematicmct thyristor datasheetphoto thyristor
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mlt 22
Abstract: MCT thyristor k 3918 regulator Dual supply voltage regulator for 30vpp HIP2030 igbt subcircuit MOS Controlled Thyristor AN9408 HIP2030EVAL TLP2601
Contextual Info: No. AN9408.2 Intersil Intelligent Power November 1994 The HIP2030 MCT/IGBT Gate Driver Provides Isolated Control Signals To Switch Power Devices Author: J. K. Azotea Introduction The Intersil Fiber-Optic Isolated Gate Driver HFOIGD is designed to operate reliably at high isolation voltages, dv/dt’s,
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an9408hip2030mlt 22mct thyristor+6k 3918 regulatordual supply voltage regulator for 30vppigbt subcircuitmos controlled thyristorhip2030evaltlp2601
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MVME167
Abstract: MVME162 MVME187 MVME197 MVME147 MVME MVME147S mvme712 51NW9626C17 MVME712B
Contextual Info: MVME712-12, MVME712-13, MVME712A, MVME712AM, and MVME712B Transition Modules and LCP2 Adapter Board User’s Manual MVME712A/D3 Notice While reasonable efforts have been made to assure the accuracy of this document, Motorola, Inc. assumes no liability resulting from any omissions in
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mvme712-12mvme712-13mvme712amvme712am+13mvme712bmvme712a/d3eia-232dmvme712xmvme712mvme167mvme162mvme187mvme197mvme147mvmemvme147s51nw9626c17
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delta dps 298 cp
Abstract: delta dps 298 cp-1 IRF 8030 irf 4710 bbc 598 479 DIODE F4049 sn 94042 Switching power supplies Delta electronics dps MR 4710 ci 4047B
Contextual Info: FAIRCHILD BIPOLAR M IC R O P R O C E S S O R □ATABOOK MACROLOGIC BIPOLAR MICROPROCESSOR OATABOOK FAIRCHILD 4 6 4 Ellis S tre e t, M o u n ta in V ie w , C alifo rn ia 9 4 0 4 2 c 1976 F a i r c h il d C a m e r a a n d In s t r u m e n t C o r p o r a t i o n / 4 6 4 E llis S t r e e t , M o u n t a i n V i e w , C a li f o r n ia 9 4 0 4 2 / 4 1 5 9 6 2 - 5 0 1 1 / T W X
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corporation/464962-5011/twxtech-71-038delta dps 298 cp+9delta dps 298 cp-1irf 8030irf 4710bbc 598 479 diodef4049sn 94042switching power supplies delta electronics dpsmr 4710ci 4047b
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Contextual Info: BYT51. Vishay Telefunken ▼ Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Low reverse current Applications Rectifiers Absolute Maximum Ratings Tj = 2 5 °C Param eter R everse voltage =R epetitive peak reverse voltage
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byt51byt51abyt51dbyt51g+4byt51jbyt51md-7402524-jun-98
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BYT51
Abstract: BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M
Contextual Info: BYT51. Vishay Telefunken Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Low reverse current Applications 94 9539 Rectifiers Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage
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BYT51A
Abstract: BYT51J BYT51K BYT51 BYT51B BYT51D BYT51G BYT51M diode 9409
Contextual Info: BYT51. TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Low reverse current Applications Rectifiers 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Reverse voltage,
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byt51byt51abyt51bbyt51g+6byt51jbyt51kbyt51mbyt51dd-74025diode 9409
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diode 9409
Abstract: BYT51 BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M
Contextual Info: BYT51. TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Low reverse current Applications Rectifiers 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Reverse voltage,
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byt51byt51abyt51bbyt51g+6byt51jbyt51kbyt51mbyt51dd-74025diode 9409
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metelics FSCM 59365
Abstract: 082C 064c 4500a 082-T86 087-C12 a 4504 450101 4500b-01 34064
Contextual Info: HE M E T E L I C S CORP 0 | bOS135E 000013^ □ | VARACTORS ' metelics 30-Volt M S V 34,000 Series 45-Volt M S V 38,000 Series 60-Volt M S V 40,000 Series CORPORATION Features Applications • H igh -Q • T u nin g oscillators, filters an d resonators • L o w leakage
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bos135e30-volt45-volt60-volt+15msv-34060-c000a-01064-c113000b-0metelics fscm 59365082c064c4500a082-t86087-c12a 45044501014500b-0134064
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SP SOT23-5
Abstract: SPUSB1BJT
Contextual Info: The following are examples of the implementation of ESD suppression. Contact Littelfuse for additional application assistance and design examples. Pb indicates that the provided solution is lead-free according to the definition set in EC336. indicates that the solution meets the requirements of RoHS.
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SCR gate drive circuit
Abstract: DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 SCR Gate Drive for ac to dc converter GBAN-PVI-1
Contextual Info: App. Notes Design Tips Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Revised Application Notes and Design Tips INT-936 Title (and topic, if necessary) Document# Pages Date The Do's and Don'ts of Using MOS-Gated Transistors
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int-936may-97jun-97an-936+11jun-96scr gate drive circuitdt94-15variable frequency drive circuit diagramdc-motor controller 500w600v igbt dc to dc buck converterir2130 with ac voltage controllerdrive circuit for igbt using ir2130dt94-9scr gate drive for ac to dc convertergban-pvi-1
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DT94-15
Abstract: ir21xx SCR gate drive circuit 3 phase IGBT inverter design by ir2130 HEXFEt Power MOSFET Design Guide 3 phase dc control ir2130 HV Floating MOS-Gate Driver circuits GBAN-PVI-1 DT-93-4 AN-948
Contextual Info: App. Notes Design Tips Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Revised Application Notes and Design Tips INT-936 Title (and topic, if necessary) Document# Pages Date The Do's and Don'ts of Using MOS-Gated Transistors
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int-936an-936int-937jun-96+11oct-98dt94-15ir21xxscr gate drive circuit3 phase igbt inverter design by ir2130hexfet power mosfet design guide3 phase dc control ir2130hv floating mos-gate driver circuitsgban-pvi-1dt-93-4an-948
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Contextual Info: 74LVC240A Octal buffer/line driver with 5-volt tolerant inputs/outputs; inverting 3-State Product specification IC24 Data Handbook Philips Semiconductors 1998 May 20 Hi Sm M PHILIPS Philips Semiconductors Product specification Octal buffer/line driver with 5-volt
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zenerdiode 218
Abstract: SMPS battery tea1100 philips tea charger 16 pin EA1100T TEA1100T
Contextual Info: INTEGRATED CIRCUITS im m 1C m TEA1100; TEA1100T Battery monitor for NiCd and NiMH chargers May 1992 Preliminary specification File under Integrated Circuits, IC03 Philips Semiconductors PHILIPS / PHILIPS Preliminary specification Philips Semiconductors Battery monitor for NiCd and NiMH
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tea1100tea1100ttea1100-zenerdiode 218+3smps battery tea1100philips tea charger 16 pinea1100t
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ic 9399 g
Abstract: hp cartridge pinout
Contextual Info: Bipolar/JFET, Audio Operational Amplifier 0P176* ANALOG DEVICES □ PIN CONNECTIONS FEATURES _ Low Noise: 6 nV/\'Hz High Slew Rate: 25 V/jis Wide Bandwidth: 10 MHz Low Supply Current: 2.5 mA Low Offset Voltage: 1 mV Unity Gain Stable SO-8 Package -Lead Narrow-Body SO
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0p17659e-9333e3743e-3+410e-31e-12ic 9399 ghp cartridge pinout
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Automotive Aftermarket Products
Abstract: PA66-GF30 RELAY PA66-GF30 pa66-gf30 12v DIN 46225 0257010 ATO Diode blade type 00970958XXN clips 46248 09130704LXN
Contextual Info: AUTOMOTIVE AFTERMARKET CIRCUIT PROTECTION PRODUCTS World Headquarters Littelfuse, Inc. 800 E. Northwest Highway Des Plaines, IL 60016, USA www.littelfuse.com International Sales, Distribution and Engineering Facilities: North America • Des Plaines, Illinois USA
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1000ppm2002/95/ecautomotive aftermarket productspa66-gf30 relay+8pa66-gf30pa66-gf30 12vdin 462250257010ato diode blade type00970958xxnclips 4624809130704lxn
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Contextual Info: 8096 Radar Training System LabVolt Series Datasheet Festo Didactic en 220 V - 50 Hz 03/2015 Radar Training System, LabVolt Series, 8096 Table of Contents General Description Topic
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B331 transistor
Abstract: transistor b331 Transistor B28D A 42 B331 transistor A 92 B331 transistor A 42 B331 transistor B324 KT 117A 851B52 intel 8049 microcomputer
Contextual Info: 1 AP-91 USING THE 8049 AS AN 80 COLUMN PRINTER CONTROLLER I. INTRODUCTION This A pplication N ote d eta ils u sin g I N T E L ’S 8049 m icrocom puter a s a d ot m atrix p rin ter controller. P re v io u s I N T E L A pplication n o tes, e.g. AP-27 and AP-54 d escrib e d usin g in telligen t p ro c e sso rs and p eri
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ap-91ap-27ap-54b331 transistor+9transistor b331transistor b28da 42 b331 transistora 92 b331 transistora 42 b331transistor b324kt 117a851b52intel 8049 microcomputer
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relay ras 1210
Abstract: asea RRME rrmh2 ASEA RMA16 RRMH RRME 1608 rrMH 2-107 MX 0842 RRMH ASEA rrme1
Contextual Info: R K Ii E AUXILIARY RELAYS , . -v lp f f ig g , • several designs > ; .< -,v . • " : ^ • ¿ 5 | 8 ly • heavy-current design • plug-ln lypes i - • types for fixed mounting " - . • suitable fo r tropical conditions £•■■ , v . y ^ - -p * & p .
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rmx17rrm17relay ras 1210asea rrme+8rrmh2asea rma16rrmhrrme 1608rrmh 2-107mx 0842rrmh asearrme1
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