93C46 IC Search Results

93c46 LN

Abstract: 93c46w 93c46 st
Contextual Info: & 93C46 Microchip IK 64 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The Microchip Technology Inc. 93C46 is a 1K bit serial Electrically Erasable PROM. The device memory is configured as 64 x 16 bits. Advanced CMOS technology

IC 93c46

Contextual Info: & 93C46 M icrochip IK 64 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The Microchip Technology Inc. 93C46 is a 1K bit serial Electrically Erasable PROM. The device memory is configured as 64 x 16 bits. Advanced CMOS technology

Contextual Info: & 93C46 Microchip IK 64 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The Microchip Technology Inc. 93C46 is a 1K bit serial Electrically Erasable PROM. The device memory is configured as 64 x 16 bits. Advanced CMOS technology

Contextual Info: & 93C46 Microchip IK 64 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The Microchip Technology Inc, 93C46 is a 1K bit serial Electrically Erasable PROM. The device memory is configured as 64 x 16 bits. Advanced CMOS technology

93XX46

Abstract: opcodes 93c46 DS2174
Contextual Info: 93AA46, 93LC46, 93C46 93AA46A/B, 93LC46A/B, 93C46A/B 1K Microwire Serial EEPROM Device Selection Table Part Number VCC Range 93AA46 1.8-5.5 Description Org Pin Word Size Yes Temp Ranges 8 or 16-bit I 93LC46 2.5-5.5 Yes 8 or 16-bit I, E 93C46 4.5-5.5 Yes

93C06 6

Abstract: 93C06 93C46X 200B 93C46 93C46T DS11179 93C46 national
Contextual Info: 93C06/46 256 Bit/1K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES DIP CS 1 8 VCC CLK 2 7 NC DI 3 6 NC DO 4 5 VSS CS 1 8 VCC CLK 2 7 NC DI 3 6 NC DO 4 5 VSS NC 1 8 NC VCC 2 7 V SS CS 3 6 DO CLK 4 5 DI 93C06 93C46 SOIC 93C06 93C46 • Low power CMOS technology

RTL8100BL

Abstract: RTL8139B realtek rtl8139 programming 8139d realtek rtl8139 RTL8100B 9346CR MS-026 BED realtek 8139 TXC10
Contextual Info: RTL8100B L REALTEK SINGLE CHIP FAST ETHERNET CONTROLLER WITH POWER MANAGEMENT RTL8100B(L) 6. EEPROM (93C46) Contents .32 6.1 Summary of the RTL8100B(L) EEPROM Registers.34 6.2 Summary of EEPROM Power Management Registers .34

RTL8100C

Abstract: RTL8100CL RTL8139C 9346CR Realtek RTL8100c RTL8139D TXC10 93C46 AD27 realtek semiconductor 8139
Contextual Info: RTL8100C L REALTEK SINGLE CHIP FAST ETHERNET CONTROLLER WITH POWER MANAGEMENT RTL8100C(L) 6. EEPROM (93C46) Contents. 32 6.1 Summary of the RTL8100C(L) EEPROM Registers. 34 6.2 Summary of EEPROM Power Management Registers . 34

IC 93c46

Abstract: memory ic 93c46 93c46 6 memory 93C46 DS20042A-8
Contextual Info: 93C46 DICE FORM M icrochip IK 64 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION Low power CMOS technology 64 x 16 bit memory organization Single 5 volt only operation Self-timed ERASE and WRITE cycles Automatic ERASE before WRITE Power on.'off data protection circuitry

93c46 st

Abstract: 93C46 93C46 dip 93C46x memory 93C46
Contextual Info: 93C46 M icrochip IK 64 X 16 CMOS Serial Electrically Erasable PROM DESCRIPTION FEATURES Low power CMOS technology 64 x 16 bit memory organization Single 5 volt only operation Self-timed ERASE and WRITE cycles Automatic ERASE before WRITE Power on/off data protection circuitry

Contextual Info: M ic r o c h ip 93C06/46 256 Bit/1K 5.0V CMOS Serial EEPROM FEATURES PACKAGETYPE • Low power CMOS technology • 16 bit memory organization - 6 x 16 bit organization 93C06 - 64 x 16 bit organization (93C46) • Single 5 volt only operation • Self-timed ERASE and WRITE cycles

IC 93c46

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. 93C46 1,024-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) Features • Advanced CMOS EEPROM Technology ■ Read/Write Non-volatile Memory — — — Single 5V supply operation 1,024 bits, 64 x 16 organization

93C46

Abstract: chip 8-pin 93C46 93C56 93c46 6 93C56 catalyst 93C66 93c56 14 pin
Contextual Info: CAT93C46/56/57/66/86 LEAD-FREE PACK AGE OPTION 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention

93C46

Abstract: IC 93c46 93c46 6
Contextual Info: 4ÖM070? OOOüa^b S M I C 37E D INTERNATIONAL C M O S 71 INTERNATIONAL CMOS TECHNOLOGY, INC. 93C46 1,024-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) Features • Read/Write Non-volatile Memory — Single 5V supply operation

Contextual Info: 93C06/46 M ic r o c h ip 256 Bit/IK 5V CMOS Serial EEPROM FEATURES DESCRIPTION • Low power CMOS technology • 16 bit memory organization — 16 x 16 bit organization 93C06 — 64 x 16 bit organization (93C46) • Single 5 volt only operation • Self-timed ERASE and WRITE cycles

93C46SI

Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Microwire Serial E2PROM FEATURES • High Speed Operation: ■ Power-Up Inadvertant Write Protection ■ 1,000,000 Program/Erase Cycles – 93C46/56/57/66: 1MHz – 93C86: 3MHz ■ 100 Year Data Retention ■ Low Power CMOS Technology

93C46x

Abstract: 93C06 6 93C46T 93C46 602 93C46 dip chip 8-pin 93C46 SM 1628
Contextual Info: 93C06/46 256 Bit/1K 5.0V CMOS Serial EEPROM FEATURES • Low power CMOS technology • 16 bit memory organization - 6 x 16 bit organization 93C06 - 64 x 16 bit organization (93C46) • Single 5 volt only operation • Self-timed ERASE and WRITE cycles • Automatic ERASE before WRITE

Contextual Info: 93C06/46 256 Bit/lK 5.0V CMOS Serial EEPROM PACKAGE TYPE FEATURES DIP • Low power CMOS technology • 16 bit memory organization - 6 x 16 bit organization 93C06 - 64 x 16 bit organization (93C46) • Single 5 volt only operation • Self-timed ERASE and WRITE cycles

93c tssop

Abstract: 93C86
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: Power-Up Inadvertant Write Protection - 93C46/56/57/66: 1MHz - 93C86: 3MHz 1,000,000 Program/Erase Cycles 100 Year Data Retention ■ Low Power CMOS Technology ■ 1.8 to 6.0 Volt Operation

93c66

Abstract: 93C86 01XXXXXXXXX
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention ■ Low power CMOS technology

93C56

Abstract: 93C56 14 pins 93C46SI
Contextual Info: CAT93C46/56/57/66/86 "GREEN" PACKAGES -Lead free 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention

93c46

Abstract: memory 93C46 93C46 tssop
Contextual Info: H CAT93C46/56/57/66/86 EE GEN FR ALO 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM LE A D F R E ETM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C46/56/57/66: 1MHz – 93C86: 3MHz ■ 100 year data retention

A015R

Contextual Info: HY93C46 A HYUNDAI SEMICONDUCTOR 6 4 x 16-Bil CMOS Serial EEPROM DESCRIPTION FEATURES T he H Y 93C46 is a 1,024-bit non-volatile m em ory organized as 64 registers o f 16 bits each. D ata can be w ritten into or read o u t serially by most microprocessors or microcontrollers. D ata is

Contextual Info: E M I C O N D U C T O R TM 1K-Bit Serial CMOS EEPROM NM93C46 1K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The NM 93C46 devices are 1024 bits of CM OS non-volatile electrically erasable m em ory divided into 6 4 1 6-bit registers. They