93C06 6 Search Results

93C46x

Abstract: 93C06 6 93C46T 93C46 602 93C46 dip chip 8-pin 93C46 SM 1628
Contextual Info: 93C06/46 256 Bit/1K 5.0V CMOS Serial EEPROM FEATURES • Low power CMOS technology • 16 bit memory organization - 6 x 16 bit organization 93C06 - 64 x 16 bit organization (93C46) • Single 5 volt only operation • Self-timed ERASE and WRITE cycles • Automatic ERASE before WRITE

Contextual Info: 93C06/46 256 Bit/lK 5.0V CMOS Serial EEPROM PACKAGE TYPE FEATURES DIP • Low power CMOS technology • 16 bit memory organization - 6 x 16 bit organization 93C06 - 64 x 16 bit organization (93C46) • Single 5 volt only operation • Self-timed ERASE and WRITE cycles

Contextual Info: M ic r o c h ip 93C06/46 256 Bit/1K 5.0V CMOS Serial EEPROM FEATURES PACKAGETYPE • Low power CMOS technology • 16 bit memory organization - 6 x 16 bit organization 93C06 - 64 x 16 bit organization (93C46) • Single 5 volt only operation • Self-timed ERASE and WRITE cycles

93C06 6

Abstract: 93C06 93C46X 200B 93C46 93C46T DS11179 93C46 national
Contextual Info: 93C06/46 256 Bit/1K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES DIP CS 1 8 VCC CLK 2 7 NC DI 3 6 NC DO 4 5 VSS CS 1 8 VCC CLK 2 7 NC DI 3 6 NC DO 4 5 VSS NC 1 8 NC VCC 2 7 V SS CS 3 6 DO CLK 4 5 DI 93C06 93C46 SOIC 93C06 93C46 • Low power CMOS technology

93c06

Abstract: 93c06 st
Contextual Info: 93C06 L DICE FORM M icrochip 256 Bits 16 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • The Microchip Technology Inc. 93C06 is a 256 bit serial Electrically Erasable PR O M . The device memory is con­

93CQ6

Abstract: 93c06 national semiconductor
Contextual Info: 93C06/46 M ic r o c h ip 256 Bit/1K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES • Low power CMOS technology DIP • 16 bit memory organization - 16 x 16-bit organization 93C06 - 64 x 16-bit organization (93C46) • Single 5V only operation • Self-timed ERASE and WRITE cycles

B10320

Abstract: 93C06 93c06 national semiconductor 93C46 93C46T 93C46X
Contextual Info: 93C06/46 M ic r o c h ip 256 Bit/IK 5.0V Microwire Serial EEPROM FEATURES • Low power CMOS technology • 16 bit memory organization - 1 6 x 1 6-bit organization 93C06 - 64 x 16-bit organization (93C46) • Single 5V only operation • Self-timed ERASE and WRITE cycles

Contextual Info: 93C06/46 M ic r o c h ip 256 Bit/IK 5V CMOS Serial EEPROM FEATURES DESCRIPTION • Low power CMOS technology • 16 bit memory organization — 16 x 16 bit organization 93C06 — 64 x 16 bit organization (93C46) • Single 5 volt only operation • Self-timed ERASE and WRITE cycles

93C46T

Abstract: 93C06 6 93C46x 93C06 93C46 93LC46 DS11179B-page
Contextual Info: M ic r o c h ip •?cß,^2-3 93C06/46 256 Bif/1K 5.0V CMOS Serial EEPROM FEATURES • Low power CMOS technology • 16 bit memory organization - 6 x 16 bit organization 93C06 - 64 x 16 bit organization (93C46) • Single 5 volt only operation • Self-timed ERASE and WRITE cycles

Contextual Info: & 93C06 Microchip 256 Bits 16 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The Microchip Technology Inc. 93C06 is a 256 bit serial Electrically Erasable PROM. The device memory is configured as 16 x 16 bits. Advanced CMOS technology

Contextual Info: & 93C06 Microchip 256 Bits 16 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The Microchip Technology Inc. 93C06 is a 256 bit serial Electrically Erasable PROM. The device memory is configured as 16 x 16 bits. Advanced CMOS technology

93C06

Contextual Info: & 93C06 Microchip 256 Bits 16 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The M icrochip Technology Inc. 93C06 is a 256 bit serial Electrically Erasable PROM. The device memory is configured as 16 x 16 bits. Advanced CMOS technology

ic 8pin C66

Abstract: 93c06 93c06 national semiconductor 93C06 EN
Contextual Info: NM93C06/C46/C56/C66 National Semiconductor NM 93C06/C46/C56/C66 256 -/10 24 -/2048-/4096-Bit Serial EEPROM MICROWIRE Bus Interface General Description Features The NM93C06/C46/C56/C66 devices are 256/1024/ 2048/4096 bits, respectively, of CMOS non-volatile electri­

93c06 national semiconductor

Abstract: 93C06
Contextual Info: NM93C06/C46/C56/C66 National Semiconductor NM93C06/C46/C56/C66 256-/1024-/2048-/4096-Bit Serial EEPROM MICROWIRE Bus Interface General Description Features The N M 93C06/C46/C56/C66 devices are 25 6/10 24/ 2048/4096 bits, respectively, of CMOS non-volatile electri­

Contextual Info: M 93C06/46 ic r o c h ip 256 Bit/1K 5.0V CMOS Serial EEPROM FEATURES PACKAGETYPE • Low power C M O S technology • 16 bit m em ory organization - 6 x 16 bit organization 9 3 C 0 6 - 64 x 16 bit organization (9 3 C 4 6 ) • Single 5 volt only operation

NM93C06M-NM93C66M

Abstract: NM93C06MN 93c06
Contextual Info: NM93C06/C46/C56/C66 256-/1024-/2048-/4096-Bit Serial EEPROM MICROWIRE Bus Interface General Description Features The N M 93C06/C46/C56/C66 devices are 256/1024/ 2048/4096 bits, respectively, of CMOS non-volatile electri­ cally erasable memory divided into 16 /64/1 28/2 56 16-bit

93C46

Abstract: 93c46 93lc46A 93AA46B 93C46 DATASHEET 93LC46B 93AA46 93C06 93C46B 93LC46 93LC46A
Contextual Info: AN664 M Converting from 93xx46 Devices to 93xx46A/B Devices DESCRIPTION This application note details the process of converting from 93C06, 93C46 and 93LC46 type devices to 93C46B, 93LC46A, and 93LC46B devices. The new 93xx46A/B devices include improved data polling operation and are available in the small 8 pin TSSOP package. The new devices also offer fixed device

Contextual Info: 93C06 Microchip 256 Bits 16 X 16 CMOS Serial Electrically Erasable PROM FEATURES • • • • • • • • • • DESCRIPTION Low power CMOS technology 16 x 16 bit memory organization Single 5 volt only operation Self-timed ERASE and W RITE cycles

93c06

Abstract: 93C06 6 93c06 st MICROCHIP PART NUMBER CODE 1117 93C06 EN
Contextual Info: 93C06 M icrochip 256 Bits 16 X 16 CMOS Serial Electrically Erasable PROM FEATURES • • • • • • • • • • DESCRIPTION Low power CMOS technology 16 x 16 bit memory organization Single 5 volt only operation Self-timed ERASE and W RITE cycles

93LC46

Abstract: 93LC46B 93C46 93C46 tssop 93c46 93lc46A 93AA46B 93C06 93LC46A 93XX46A 93AA46
Contextual Info: AN664 M Converting from 93xx46 Devices to 93xx46A/B Devices DESCRIPTION This application note details the process of converting from 93C06, 93C46 and 93LC46 type devices to 93C46B, 93LC46A, and 93LC46B devices. The new 93xx46A/B devices include improved data polling operation and are available in the small 8 pin TSSOP package. The new devices also offer fixed device

93C46

Abstract: 93C06 93AA46 93AA46B 93C46B 93LC46 93LC46A 93LC46B AN664 memory 93C46
Contextual Info: AN664 M Converting from 93xx46 Devices to 93xx46A/B Devices DESCRIPTION This application note details the process of converting from 93C06, 93C46 and 93LC46 type devices to 93C46B, 93LC46A, and 93LC46B devices. The new 93xx46A/B devices include improved data polling operation and are available in the small 8 pin TSSOP package. The new devices also offer fixed device

93C06

Abstract: 93C46 93C46T 93C46X 93LC46 93C06 6
Contextual Info: M 93C06/46 ic r o c h ip 256 Bit/IK 5.0V CMOS Serial EEPROM PACKAGETYPE FEATURES • Low power CMOS technology DIP s C 1 8 □ Vcc CLK C 2 7 □ NC • 16 bit m emory organization - 64 x 16 bit organization 93C46 • Single 5 volt only operation DI C 3

M08A

Abstract: MTC08 NM93C06
Contextual Info: e m i g o n d l - io t c d r t m General Description Features The NM 93C06 devices are 256 bits of CM OS non-volatile electri­ cally erasable m em ory divided into 16 16-bit registers. They are fabricated using Fairchild Sem iconductor's floating-gate CMOS

Contextual Info: E M I C O N D U C T O R TM 256-Bit Serial CMOS EEPROM NM93C06 256-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The NM 93C06 devices are 256 bits of CM OS non-volatile electri­ cally erasable m em ory divided into 16 16-bit registers. They are