935 B Search Results

935 B Datasheets (9)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF
1SMAF5935B	SUNMATE electronic Co., LTD	Surface mount silicon Zener diode with a voltage range of 3.3 to 240V, 1.5W power dissipation at 75°C, and operating junction temperature from -65 to +150°C.Surface mount silicon Zener diode with a voltage range of 3.3 to 240V, 1.5W power dissipation at 75°C, low leakage current, high reliability, and ±5% tolerance indicated by suffix B.Surface mount silicon Zener diode with a voltage range of 3.3 to 240V, 1.5W power dissipation at 75°C, low leakage current, high reliability, and ±5% tolerance indicated by suffix B.Surface mount silicon Zener diode with a voltage range of 3.3 to 240V, 1.5W power dissipation at 75°C, and operating junction temperature from -65 to +150°C.Surface mount silicon Zener diode with a voltage range of 3.3 to 240V, 1.5W power dissipation at 75°C, low leakage current, high reliability, and ±5% tolerance indicated by suffix B.Surface mount silicon Zener diode with voltage range 3.3 to 240V, 1.5W power dissipation at 75°C, 250°C/W thermal resistance junction to ambient, and ±5% tolerance indicated by suffix B.Surface mount silicon Zener diode with 3.3 to 240V voltage range, 1.5W power dissipation at 75°C, low leakage current, high reliability, and ±5% tolerance indicated by suffix B.Surface mount silicon Zener diode with a voltage range of 3.3 to 240V, 1.5W power dissipation at 75°C, and ±5% tolerance for type B, featuring low leakage current and high reliability in SMAF package.Surface mount silicon Zener diode with voltage range 3.3 to 240V, 1.5W power dissipation at 75°C, 50°C/W junction-to-lead thermal resistance, and ±5% tolerance option, designed for high reliability and low leakage current applications.	Original	PDF
1SMB5935B	AK Semiconductor	Silicon planar Zener diode in DO-214AC package with 3W power dissipation, 3.3V to 200V reverse voltage range, and lead-free construction for surface mount design.	Original	PDF
1SMB5935B	SUNMATE electronic Co., LTD	Surface mount silicon Zener diode in SMB package, 3.0W power dissipation, 3.3 to 200V voltage range, ±5% tolerance, operating junction temperature from -65 to +150°C.Surface mount silicon Zener diode in SMB package with power dissipation up to 3.0W, voltage range 3.3 to 200V, and junction temperature range -65 to +150°C.	Original	PDF
1SMA5935B	AK Semiconductor	Silicon planar Zener diode in SMA package with 1.5W power dissipation, 3.3V to 240V reverse voltage range, ±5% tolerance option, and surface mount design.	Original	PDF
1SMA5935B	SUNMATE electronic Co., LTD	Surface mount silicon Zener diodes in SMA/DO-214AC package with 3.3 to 240V voltage range, 1.5W power dissipation at TL=75°C, operating junction temperature from -65 to +150°C, and ±5% voltage tolerance for suffix B types.	Original	PDF
1SMB5935B	SLKOR	Zener diode, 1.5W, SMB/DO-214AA, Iz MAX: see table, Pt: 3.0W, Rθ(ja): 28°C/W, TJ: -50～+150°C, TSTG: -50～+175°C, molded plastic, UL94V-0 epoxy.	Original	PDF
1N5935B	SUNMATE electronic Co., LTD	Axial leaded silicon Zener diode with 1.5W power dissipation, 3.3 to 240V voltage range, DO-41 package, low leakage current, high reliability, and UL94V-0 rated flame retardant epoxy case.Axial leaded silicon Zener diode with 1.5W power dissipation, 3.3 to 240V voltage range, DO-41 package, low leakage current, and high reliability for general-purpose regulation.Axial leaded silicon Zener diode in DO-41 package with 1.5W power dissipation, 3.3 to 240V voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.5W power dissipation, 3.3 to 240V zener voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode in DO-41 package with 1.5W power dissipation, 3.3 to 240V voltage range, low leakage current, and UL94V-0 rated epoxy casing for high reliability and flame resistance.Axial leaded silicon Zener diodes in DO-41 package with 1.5W power dissipation, 3.3 to 240V zener voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with power dissipation of 1.5W, voltage range 3.3 to 240V, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode with 1.5W power dissipation, 3.3 to 240V voltage range, DO-41 package, color band indicating cathode, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.5W power dissipation, 3.3 to 240V zener voltage range, low leakage current, and operating junction temperature from -55 to +175°C.	Original	PDF
1SMBF5935B	SUNMATE electronic Co., LTD	Surface mount silicon Zener diode 1SMBF5913B with voltage range 3.3 to 240V, power dissipation 1.5W at 75°C, forward voltage 1.5V at 200mA, operating temperature -65 to +150°C, and thermal resistance junction to ambient 250°C/W.Surface mount silicon Zener diode 1SMBF5913B with voltage range 3.3 to 240V, 1.5W power dissipation at 75°C, low leakage current, high reliability, and ±5% tolerance indicated by suffix B.Surface mount silicon Zener diode 1SMBF5913B with voltage range 3.3 to 240V, power dissipation 1.5W at 75°C, forward voltage 1.5V at 200mA, operating junction temperature -65 to +150°C, and thermal resistance junction to ambient 250°C/W.Surface mount silicon Zener diode 1SMBF5913B with voltage range 3.3 to 240V, power dissipation 1.5W at 75C, forward voltage 1.5V at 200mA, operating junction temperature -65 to +150C, and low leakage current.Surface mount silicon Zener diode 1SMBF5913B with voltage range 3.3 to 240V, power dissipation 1.5W at 75°C, forward voltage 1.5V at 200mA, operating junction temperature -65 to +150°C, and thermal resistance junction to ambient 250°C/W.Surface mount silicon Zener diode 1SMBF5913B with voltage range 3.3 to 240V, power dissipation 1.5W at 75C, reverse leakage current up to 100μA, and Zener impedance from 2 to 9000 ohms depending on voltage rating.Surface mount silicon Zener diode 1SMBF5913B with voltage range 3.3 to 240V, power dissipation 1.5W at 75°C, junction temperature range -65 to +150°C, and thermal resistance junction to ambient 250°C/W.	Original	PDF
1SMF5935B	SUNMATE electronic Co., LTD	Surface mount silicon Zener diode in SOD-123FL package with voltage range 3.3 to 240V, 1.5W power dissipation at 75°C, and ±5% tolerance indicated by suffix B.Surface mount silicon Zener diode in SOD-123FL package with voltage range 3.3 to 240V, 1.5W power dissipation at 75°C, low leakage current, and ±5% tolerance indicated by suffix B.Surface mount silicon Zener diode in SOD-123FL package, 3.3 to 240V voltage range, 1.5W power dissipation at 75°C, low leakage current, high reliability, with ±5% tolerance for suffix B.Surface mount silicon Zener diodes in SOD-123FL package with voltage range 3.3 to 240V, 1.5W power dissipation at 75°C, and ±5% tolerance for type B, featuring low leakage current and high reliability.Surface mount silicon Zener diode in SOD-123FL package with voltage range 3.3 to 240V, 1.5W power dissipation at 75°C, low leakage current, and ±5% tolerance indicated by suffix B.Surface mount silicon Zener diode in SOD-123FL package, 3.3 to 240V voltage range, 1.5W power dissipation at 75°C, low leakage current, high reliability, with ±5% tolerance indicated by suffix B.	Original	PDF

935 B Price and Stock

Filter by Manufacturer

Select Manufacturer


onsemi 1N5935BRLG DIODE ZENER 27V 3W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	1N5935BRLG	Cut Tape	25,534		1	1 $0.42 10 $0.28 100 $0.20 1000 $0.18 10000 $0.18	Buy Now
	1N5935BRLG	Tape & Reel	24,000		6,000	1 - 10 - 100 - 1000 - 10000 $0.16	Buy Now
Rochester Electronics	1N5935BRLG		3,325		1	1 - 10 - 100 $0.19 1000 $0.16 10000 $0.14	Buy Now
Avnet Asia	1N5935BRLG			8 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 $0.16	Buy Now
Avnet Silica	1N5935BRLG			9 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	1N5935BRLG			10 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Flip Electronics	1N5935BRLG		6,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi FDS4935BZ MOSFET 2P-CH 30V 6.9A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	FDS4935BZ	Cut Tape	22,782		1	1 $1.46 10 $0.93 100 $0.61 1000 $0.44 10000 $0.44	Buy Now
	FDS4935BZ	Digi-Reel	22,782		1	1 $1.46 10 $0.93 100 $0.61 1000 $0.44 10000 $0.44	Buy Now
	FDS4935BZ	Tape & Reel	22,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.35	Buy Now
Avnet Americas	FDS4935BZ	Tape & Reel	15,000	24 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.23	Buy Now
Newark	FDS4935BZ	Cut Tape	396		1	1 $1.68 10 $1.13 100 $0.80 1000 $0.73 10000 $0.73	Buy Now
Avnet Asia	FDS4935BZ			24 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FDS4935BZ		15,000	25 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	FDS4935BZ			26 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	FDS4935BZ		9,999			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Maritex	FDS4935BZ		1,201		1	1 $0.81 10 $0.61 100 $0.41 1000 $0.32 10000 $0.32	Buy Now
onsemi 1PMT5935BT1G DIODE ZENER 27V 3.2W POWERMITE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	1PMT5935BT1G	Cut Tape	2,583		1	1 $0.45 10 $0.41 100 $0.32 1000 $0.26 10000 $0.26	Buy Now
	1PMT5935BT1G	Digi-Reel	2,583		1	1 $0.45 10 $0.41 100 $0.32 1000 $0.26 10000 $0.26	Buy Now
TME	1PMT5935BT1G				1	1 $0.55 10 $0.50 100 $0.41 1000 $0.36 10000 $0.33	Get Quote
Avnet Silica	1PMT5935BT1G			20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	1PMT5935BT1G			21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	1PMT5935BT1G		18,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Eaton Bussmann NRNE103H3935B2H THERMISTOR 1K OHM 3935 BETA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NRNE103H3935B2H	Bulk	1,657		1	1 $0.23 10 $0.18 100 $0.15 1000 $0.13 10000 $0.12	Buy Now
Newark	NRNE103H3935B2H	Bulk	1,899		1	1 $0.18 10 $0.18 100 $0.18 1000 $0.18 10000 $0.18	Buy Now
Sager	NRNE103H3935B2H				2,000	1 - 10 - 100 - 1000 - 10000 $0.09	Buy Now
ScioSense AS3935-BQFT SENSOR LIGHTNING I2C SPI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AS3935-BQFT	Tape & Reel	1,000		1,000	1 - 10 - 100 - 1000 $5.67 10000 $5.67	Buy Now
EBV Elektronik	AS3935-BQFT			27 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 935 B price and stock on Findchips.com

935 B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
935C1W10K Abstract: 935C1W1K 935C1W20K 935C1W2K 935C1W30K 935C1W3K 935C1W5K 935C2W1K 935C2W2K 935C2W3K Contextual Info: Type 935 Polypropylene Film Capacitors Power Supplies High Current Circuits Metallized Axial Leads Type 935 axial-leaded, metallized polypropylene capacitors are designed for 20-100 kHz switching power supply input ﬁltering, DC blocking and output ﬁlter	Original	E128034 935H4W2K 935H4W3K 935H4W5K 935H4W10K 935C1W10K 935C1W1K 935C1W20K 935C1W2K 935C1W30K 935C1W3K 935C1W5K 935C2W1K 935C2W2K 935C2W3K	PDF
Contextual Info: SAW DEVICES TOYOCOM FOR CELLULAR RF FILTER Type TQ S -907A -7R TQ S -908A -7R TQ S -803A -7R TQ S -804A -7R T O S -777A -7R TQ S -778A -7R 902.5MHz 947.5MHz 902.5MHz 947.5MHz 902.5MHz 947.5MHz 890~915MHz 935-960MHZ 89 0-915MHz 935-960MHZ 890-915MHz 935-960MHZ	OCR Scan	-907A -908A -803A -804A -777A -778A 915MHz 935-960MHZ 0-915MHz	PDF
AMI Semiconductor Abstract: N02L1618C1A N02L1618C1AB N02L1618C1AB2 N02L1618C1AT2 N02L163WN1A Contextual Info: AMI Semiconductor, Inc. N02L1618C1A ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview Features The N02L1618C1A is an integrated memory	Original	N02L1618C1A 128Kx16 N02L1618C1A N02L163WN1A, AMI Semiconductor N02L1618C1AB N02L1618C1AB2 N02L1618C1AT2 N02L163WN1A	PDF
Contextual Info: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L083WC2A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit Overview Features The N02L083WC2A is an integrated memory	Original	N02L083WC2A N02L083WC2A	PDF
Contextual Info: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N01L1618N1A 1Mb Ultra-Low Power Asynchronous CMOS SRAM Features 64K x 16 bit Overview The N01L1618N1A is an integrated memory	Original	N01L1618N1A N01L1618N1A	PDF
N01L163WC2A Abstract: N01L163WC2AB N01L163WC2AT N01L163WC2AT2 Contextual Info: AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N01L163WC2A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K x 16 bit Overview Features The N01L163WC2A is an integrated memory	Original	N01L163WC2A N01L163WC2A N01L163WC2AB N01L163WC2AT N01L163WC2AT2	PDF
Contextual Info: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N16D1618LPA Advance Information 512K x 16 Bits × 2 Banks Low Power Synchronous DRAM DESCRIPTION These N16D1618LPA are low power 16,777,216 bits CMOS Synchronous DRAM organized as 2 banks of 524,288	Original	N16D1618LPA N16D1618LPA	PDF
Contextual Info: e PTB 20008 10 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP	Original	1-877-GOLDMOS 1301-PTB	PDF
Opto Speed SA Contextual Info: rev. 06/00 ?`d_C`UUTC1, Via Cantonale, CH-6805 Mezzovico +41 91 935 52 52 / Fax +41 91 935 52 62 / www.optospeed.com ?`d_C`UUT +LJK 7HPSHUDWXUH *EV 3/DVHU QP /&6+$)3 .<2&(5$ 60/ 68%02817 )($785(6 /RZ 7KUHVKROG +LJK 3RZHU +LJK 6SHHG +LJK 7HPSHUDWXUH	Original	CH-6805 LCSH1310A-FP Opto Speed SA	PDF
NT5DS16M16CS-5T Abstract: NT5DS16M16CS-6K NT5DS16M16CT-6K NT5DS32M8CS-5T NT5DS32M8CT-5T DDR333 DDR400 NT5DS16M16CT NT5DS32M8CT NT5DS64M4CS Contextual Info: NanoAmp Solutions, Inc. 670 N. McCarthy Blvd. Ste.#220, Milpitas, CA 95035 ph: 408-935-7777 www.nanoamp.com NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS 256Mb DDR Synchronous DRAM Features CAS Latency and Frequency CAS Latency	Original	NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS 256Mb DDR400 DDR333 110nm NT5DS16M16CS-5T NT5DS16M16CS-6K NT5DS16M16CT-6K NT5DS32M8CS-5T NT5DS32M8CT-5T DDR333 DDR400 NT5DS16M16CT NT5DS32M8CT NT5DS64M4CS	PDF
Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger	OCR Scan	SEP8506 SDP8406 SDP8106 SDP8000/8600 SEP8506	PDF
SEP8506 Abstract: SDP8000 SDP8406 SDP8106 Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger	Original	SEP8506 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8506 SDP8000 SDP8106	PDF
GHB-3M60D-DR Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M60D-DR Features Description !ULTRA BRIGHTNESS. The Super Bright Red source color devices are !OUTSTANDING made with Gallium Aluminum Arsenide Red Light !RELIABLE MATERIAL EFFICIENCY.	Original	GHB-3M60D-DR MAR/05/2003 GHB-3M60D-DR	PDF
SEP8505 Abstract: infrared diode simple phototransistor Infrared Emitting Diode SDP8405 SDP8105 Contextual Info: 17 September 1997 SEP8505 GaAs Infrared Emitting Diode FEATURES • T-1 package • 15¡ nominal beam angle • 935 nm wavelength • Consistent on-axis optical properties • Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington	Original	SEP8505 SDP8405 SDP8105 INFRA-55 SEP8505 infrared diode simple phototransistor Infrared Emitting Diode SDP8105	PDF

Contextual Info: _ J BD933; 935 BD937; 939 BD941 V SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television amplifier circuits where high peak powers can occur.	OCR Scan	BD933; BD937; BD941 BD934; BD933 oo34s 003HS1S	PDF
GHB-1104R-B Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1104R-B Features Description !3.0mmx1.0mm SMT LED, 2.0mm THICKNESS. The Blue source color devices are made with !LOW POWER CONSUMPTION. Gan on Sapphire Light Emitting Diode.	Original	GHB-1104R-B 2000PCS DEC/29/2002 GHB-1104R-B	PDF
GHB-GW20-Y Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-GW20-Y Features Description ?SUBMINIATURE PACKAGE. The Super Bright Yellow source color devices are made ?WIDE VIEWING ANGLE. ?LONG LIFE - SOLID STATE RELIABILITY. SUBMINIATURE SOLID STATE LAMP	Original	GHB-GW20-Y 1000PCS NOV/13/2002 GHB-GW20-Y	PDF
GHB-3M40D-DR Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M40D-DR Features Description !LOW POWER CONSUMPTION. The Super Bright Red source color devices are. !POPULAR T-1 DIAMETER PACKAGE. made with Gallium Aluminum Arsenide Red Light	Original	GHB-3M40D-DR MAR/05/2003 GHB-3M40D-DR	PDF
GHB-3M60D-O Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M60D-O Features Description !HIGH INTENSITY. The Super Bright Orange source color devices are made !LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light Emitting Diode.	Original	GHB-3M60D-O MAR/05/2003 GHB-3M60D-O	PDF
GHB-0603-Y Abstract: yello smd led Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0603-Y Description The Super Bright Yellow source color devices are Features made with DH InGaAlP on GaAs substrate Light !1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. Emitting Diode.	Original	GHB-0603-Y 2000PCS NOV/02/2002 GHB-0603-Y yello smd led	PDF
GHB-0805-O Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0805-O Description Features !2.0mmx1.25mm SMTLED, 1.1mm THICKNESS. The Super Bright Orange source color devices are !LOW POWER CONSUMPTION. made with DH InGaAlP !WIDE VIEWING ANGLE.	Original	GHB-0805-O 2000PCS DEC/05/2002 GHB-0805-O	PDF
KBU10005 Abstract: KBU1010 Contextual Info: KBU10005 THRU KBU1010 Bridge Rectifier YENYO Features ¬ Voltage Range 50 to 1000 V Current 10.0 Ampere Plastic package has Underwriters KBU Laboratory Flammability Classification 94V-0 ¬ High surge current capability ¬ Ideal for printed circuit boards .935 23.7	Original	KBU10005 KBU1010 MIL-STD-202, 300uS DBF33, MAR-04 KBU1010	PDF
kbu 808G Abstract: 8005g 804G 808g 802G 806G KBU8005G KBU810G Contextual Info: KBU8005G thru KBU810G REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 8.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS KBU FEATURES ●Surge overload rating -175 amperes peak .157 4.0 *45° ●Ideal for printed circuit board .935(23.7) .895(22.7) ●Reliable low cost construction utilizing	Original	KBU8005G KBU810G 1000Volts kbu 808G 8005g 804G 808g 802G 806G KBU810G	PDF
KBU2510-G Abstract: KBU2510G Contextual Info: KBU25005G thru KBU2510G GLASS PASSIVATED REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 25.0 Amperes BRIDGE RECTIFIERS KBU FEATURES ●Surge overload rating -300 amperes peak .157 4.0 *45° .935(23.7) .895(22.7) ●Ideal for printed circuit board ●Reliable low cost construction utilizing	Original	KBU25005G KBU2510G 1000Volts KBU2510-G KBU2510G	PDF

935 B Search Results

935 B Datasheets (9)

935 B Price and Stock

onsemi 1N5935BRLG

onsemi FDS4935BZ

onsemi 1PMT5935BT1G

Eaton Bussmann NRNE103H3935B2H

ScioSense AS3935-BQFT

935 B Datasheets Context Search

935C1W10K

AMI Semiconductor

N01L163WC2A

Opto Speed SA

NT5DS16M16CS-5T

SEP8506

GHB-3M60D-DR

SEP8505

GHB-1104R-B

GHB-GW20-Y

GHB-3M40D-DR

GHB-3M60D-O

GHB-0603-Y

GHB-0805-O

KBU10005

kbu 808G

KBU2510-G