927 DIODE Search Results

MBJ1

Contextual Info: PFC Micro Design Guide PFC Micro Power Factor Corrected AC-DC Switcher Design Guide and “Quick Install” Instructions www.vicorpower.com 03-000048 rev A Vicor 800-735-6200 Westcor Division 408-522-5280 Applications Engineering 800-927-9474 PFC Micro Design Guide

Contextual Info: PFC MicroS Design Guide PFC MicroS Power Factor Corrected AC-DC Switcher Design Guide and “Quick Install” Instructions www.vicorpower.com 03-00049 rev A Vicor 800-735-6200 Westcor Division 408-522-5280 Applications Engineering 800-927-9474 PFC MicroS Design Guide

Contextual Info: PFC MicroS Design Guide PFC MicroS Power Factor Corrected AC-DC Switcher Design Guide and “Quick Install” Instructions www.vicorpower.com Rev. 1/2009 Vicor 800-735-6200 Westcor Division 408-522-5280 Applications Engineering 800-927-9474 PFC MicroS Design Guide

2SD2124

Abstract: ADE-208-927 DSA003645 Hitachi DSA0036
Contextual Info: 2SD2124 L /(S) Silicon NPN Epitaxial ADE-208-927 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline DPAK 4 2, 4 4 1 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector ID 6 kΩ (Typ) 0.5 kΩ (Typ) 3 2SD2124(L)/(S)

IC 74C926

Abstract: 74c926 74C925 74c927 74c928 ic mm74c926 2digit display led counter driver ic 74c925 mm74c925n mm74c925
Contextual Info: Revised January 1999 SEMICONDUCTOR TM MM74C925 • MM74C926 • MM74C927 • MM74C928 4-Digit Counters with Multiplexed 7-Segment Output Drivers General Description back LOW only w hen the co un ter is reset. Thus, this is a 31/2-digit counter. The M M 74C 925, M M 74C926, M M 74C 927 and M M 74C 928

Contextual Info: UNIVERSAL MICROELECTRONIC ST E D B ^3015 " p - 5 7 . j { GQQüQaif b • INPUT SPECIFICATIONS ¡¡ » J j V ' 4 ^ A Input Voltage Range, 12V. 24V . 48V . . Input Filter. Reverse Voltage Protection.

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Diode Laser Bars 940 nm, 160 W cw JDL-BAB-50-47-940-TE-160-3.5 Features: Applications: m High laser power m /TLOHMFNERNKHC RS@SDK@RDQR@MCÆADQK@RDQR

MFOE

Contextual Info: •701 TOX 9001 Gallium Aluminum Arsenide Light Emitting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES This is a high radiance GaAIAs IR LED optimized for fiber optic applications requiring high power and fast response time. ABSOLUTE MAXIMUM RATINGS

Contextual Info: Texas Optoelectronics, Inc. TIES13, TIES13A Gallium Arsenide Infrared-Emitting Diodes DESIGNED TO EMIT NEAR-INFRARED RADIANT ENERGY WHEN FORWARD BIASED • High Output Efficiency • Hemispherically Shaped Chips with Diameter of 36 Mils • Spectrally Matched to Silicon Sensors . . . Peak Emission at 9 30 nm

Contextual Info: «701 T0X 9005 P-N Gallium Arsenide Infrared-Emitting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9005 is a 940 nm emitter designed for short distance point to point data transmission and position sensing. Designed to emit near-infrared radiation

diode in 5401

Abstract: for APD bias high-voltage 104 Ceramic Disc Capacitors 100v
Contextual Info: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEATURES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages

step recovery diode application

Abstract: MA44600 step recovery diodes MA43002-91 ODS-93 MA43000 MA43543 MA43592 "Step Recovery Diode" step recovery diode
Contextual Info: RoHs Compliant Silicon Step Recovery Diodes Features Absolute Maximum Ratings @ TA=+25 °C • Low Transition Times • Tight Capacitance Ranges • High Voltage and Low Thermal Resistance for Higher Input Power • Lead-Free RoHs Compliant Description and Applications

APT29F80J

Abstract: MIC4452
Contextual Info: APT29F80J 800V, 29A, 0.21Ω Max, trr ≤370ns N-Channel FREDFET S S POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits

Contextual Info: P-CHANNEL POWER MOSFETS SSD2104 FEATURES • • • • • • • Lower Rds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

thyristor 406

Abstract: diode T 3512 T1929N T380N T869N
Contextual Info: M2C - Schaltung ~ M2K ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W]

38N100Q2

Contextual Info: IXFL 38N100Q2 HiPerFETTM Power MOSFETs IXFL 38N100Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 1000

403CNQ

Abstract: 403CNQ080 403CNQ090 403CNQ100 IRFP460 SL 2042
Contextual Info: Bulletin PD-2.214 rev. E 05/02 403CNQ. R SERIES SCHOTTKY RECTIFIER 400 Amp TO-244AB Major Ratings and Characteristics Characteristics Description/Features The 403CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.

201CNQ

Abstract: 201CNQ035 201CNQ040 201CNQ045 IRFP460
Contextual Info: Bulletin PD-2.258 rev. C 07/01 201CNQ. SERIES 200 Amp SCHOTTKY RECTIFIER TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 201CNQ. Units The 201CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.

408CNQ060

Abstract: IRFP460 modified square wave UPS
Contextual Info: Bulletin PD-20581 rev. A 07/01 408CNQ060 SCHOTTKY RECTIFIER 400 Amp TO-244AB Major Ratings and Characteristics Characteristics Description/Features 408CNQ. Units IF AV Rectangular 400 A VRRM range 60 V 25,500 A 0.59 V waveform IFSM @ tp = 5 µs sine VF

MAX6485

Contextual Info: Advance Technical Information IXTQ 160N085T IXTA 160N085T IXTP 160N085T Trench Gate Power MOSFET VDSS ID25 = 85 V = 160 A Ω = 6.0 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: MA3404K10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3404K is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

200CNQ

Abstract: 200CNQ035 200CNQ040 200CNQ045 IRFP460
Contextual Info: Bulletin PD-2.257 rev. D 07/01 200CNQ. SERIES SCHOTTKY RECTIFIER 200 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 200CNQ. Units The 200CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.

DU 4026

Abstract: 200CNQ 200CNQ035 200CNQ040 200CNQ045 IRFP460
Contextual Info: Bulletin PD-2.257 rev. C 07/00 200CNQ. SERIES 200 Amp SCHOTTKY RECTIFIER TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 200CNQ. Units 200 A 35 TO 45 V 26,000 A 150 °C TJ operation Center tap module 0.49

Contextual Info: Bulletin PD-20481 10/01 300CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 300CNQ. Units 300 A 35 to 45 V 27000 A 150 °C TJ operation Center tap module 0.62 V High purity, high temperature epoxy encapsulation for