921 SMD TRANSISTOR Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common

MRF6522-70

Abstract: mosfet 55 nf 06
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common

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Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performances of this device makes it ideal for large–signal, common source

Contextual Info: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband

"RF MOSFET"

Abstract: BC847 LP2951 MRF6522-70 MRF6522-70R3
Contextual Info: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband

Contextual Info: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband

Contextual Info: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband

LP2951

Abstract: BC847 921 smd transistor
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6522 - 70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522−70R3 N - Channel Enhancement - Mode Lateral MOSFET Freescale Semiconductor, Inc. Designed for GSM 900 frequency band, the high gain and broadband

SPS 16-H

Abstract: BC847 LP2951 MRF6522-70 MRF6522-70R3 SMD potentiometer
Contextual Info: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband

Contextual Info: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband

Contextual Info: MOTOROLA Order this document by MRF6522 - 70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522−70R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source

Contextual Info: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source

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Contextual Info: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source

BC847

Abstract: LP2951 MRF6522-70 MRF6522-70R3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6522 - 70 Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source

BC847

Abstract: LP2951 MRF6522-70 MRF6522-70R3
Contextual Info: MOTOROLA O rder this docum ent by M RF6522—70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M RF6522-70 M RF6522-70R3 RF Pow er Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs D e s ig n e d fo r G S M 9 0 0 fre q u e n c y b a n d , th e h igh g a in and b ro a d b a n d

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Abstract: SOT c5 87 BC847 EB212 LP2951 MRF6522-70 MRF6522-70R3 marking amplifier j02 smd transistor marking C14 r
Contextual Info: Document Number: MRF6522-70 Rev. 9, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6522-70R3 LIFETIME BUY Designed for GSM 900 frequency band, the high gain and broadband

NI-600

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6522-70 Rev. 9, 10/2008 RF Power Field Effect Transistor MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common source

SSY20

Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Contextual Info: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3

05n03l

Abstract: 05N03LA P-TO252-3-11 IPD05N03LA IPU05N03LA JESD22 05n03
Contextual Info: IPD05N03LA IPU05N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID 50 A • N-channel • Logic level

05N03

Abstract: Q67042-S4141 05N03L SMD fet MARKING 34 D55 SMD CODE MARKING IPB05N03LA IPB05N03LAG 05n03la
Contextual Info: IPB05N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 4.6 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

05N03

Abstract: 05N03LA IPB05N03LA JESD22 IPB05N03LAG
Contextual Info: IPB05N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 4.6 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

05N03LA

Abstract: 05n03l 05N03 P-TO252-3-11 P-TO252 S4230 diode SMD marking code 27 P-TO251 marking CODE R SMD DIODE smd marking av
Contextual Info: OptiMOS 2 Power-Transistor IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID 50 A • N-channel, logic level

Contextual Info: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID