912 MOSFET Search Results

SUM60N08-07C SPICE Device Model

Abstract: SUM60N08-07C
Contextual Info: SPICE Device Model SUM60N08-07C Vishay Siliconix N-Channel 75-V D-S MOSFET with Current Sense Terminal CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

GL9435

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/02/18 REVISED DATE : GL9435 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 50m -6A Description The GL9435 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

LM3150

Abstract: LM3150MH LM3150MHE LM3150MHX SER2814H-153KL SER2817H-333KL L37 so8 LED buck converter 3A Circuit diagram of 12v 1W LED driver
Contextual Info: LM3150 SIMPLE SWITCHER CONTROLLER, 42V Synchronous Step-Down General Description Features SWITCHER® The LM3150 SIMPLE Controller is an easy to use and simplified step down power controller capable of providing up to 12A of output current in a typical application.

C0805C

Abstract: mosfet l04
Contextual Info: LM3151, LM3152, LM3153 www.ti.com SNVS562G – SEPTEMBER 2008 – REVISED MARCH 2011 LM3151/LM3152/LM3153 SIMPLE SWITCHER CONTROLLER, High Input Voltage Synchronous Step-Down Check for Samples: LM3151, LM3152, LM3153 FEATURES • • • • 1 • • •

Contextual Info: LM3151, LM3152, LM3153 www.ti.com SNVS562G – SEPTEMBER 2008 – REVISED MARCH 2011 LM3151/LM3152/LM3153 SIMPLE SWITCHER CONTROLLER, High Input Voltage Synchronous Step-Down Check for Samples: LM3151, LM3152, LM3153 FEATURES DESCRIPTION • • • •

Contextual Info: AP9435GK-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Low Gate Charge Fast Switching Characteristic -30V RDS ON 50m ID S RoHS Compliant & Halogen-Free BVDSS -6A D SOT-223 G Description

Ni200

Abstract: MRF281Z
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for

Contextual Info: SPICE Device Model SQ9407EY www.vishay.com Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

200S

Abstract: MRF281SR1 MRF281ZR1 mosfet 4496 741 motorola
Contextual Info: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station

Contextual Info: NTP35N15 Preferred Device Power MOSFET 37 Amps, 150 Volts N−Channel TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

Contextual Info: SQJ465EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)

SQ9407EY

Contextual Info: SQ9407EY www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)

Contextual Info: NDF08N50Z N-Channel Power MOSFET 500 V, 0.85 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS

TB03100M

Abstract: TRIPLE ZENER DIODE ARRAY Dual N-Channel mosfet sot-363 Dual P-Channel mosfet sot-363 thyristor tt 330 n16 DMMT847B sot26 sot363 transistor ALL4150 sot-363 MARKING n10 diode marking code LY sot-353
Contextual Info: Product Catalog 2002/2003 Click to go to: - Table of Contents - New Products List - Index Click: part numbers > data sheets Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2002/2003 Specifications are subject to change without notice.

Contextual Info: SQJ963EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

sqj465ep

Contextual Info: SQJ465EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)

Contextual Info: SQ9407EY www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)

ATC100B100BT500XT

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 3, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W-CDMA base station applications with frequencies from 2110

Contextual Info: Multimedia ICs High-voltage control circuit for CRT displays BA9756 / BA9756FS The BA9756 / BA9756FS are LSIs that control CRT anode voltage in multi-scan monitors and sim ilar devices, using a chopper-type voltage control circuit. The internal sawtooth wave generator circuit uses autom atic gain control

2377L

Abstract: STHS2375A STHS2375L STHS2376A STHS2376L STHS2377
Contextual Info: STHS2375A, STHS2375L, STHS2376A, STHS2376L, STHS2377A, STHS2377L IEEE 802.3af PoE Powered Device PD interface controller Features • 8 IEEE 802.3af-compliant interface for Powered Devices (PDs) 1 ■ Integrated 100V, 500mA power MOSFET ■ Resistor-programmable inrush current limit

SEMIKRON SKHI 65

Abstract: SKHI 65 Semikron Skai 2 SKM75GB123D semikron IGBT semikron skai igbt trigger by opto skhi 64 Semikron skai mosfet single phase inverter IGBT driver
Contextual Info: ✓ plug + play ✓ protection ✓ easy interface ✓ integrated DC-DC converter ✓ 4kV isolation IGBT and MOSFET SKHI - Drivers Integrated Components and Integrated Solutions SEMIKRON - IGBT/MOSFET Drivers SKHI SEMIKRON - Driver ASICs SKIC SKHI-DRIVER ✓ Protection

CHN 804 diode

Abstract: CHN 709 CHN 633 diode chn 529 SEMITOP 2 Package CHN 633 Diodes Semikron Semitop sk 70 kq diode PFZ 15A semikron sk 50 et 12 chn 725
Contextual Info: SEMITOP Cool Components SEMITOP® "Cool Alternative" Features • Low Rth junction to heatsink For isolation the SEMITOP uses a ceramic substrate. The evenly distributed pressure and the evenly distributed placement of the chips on the ceramic substrate results in a reduced

semikron sk 50 et 12

Abstract: CHN 346 IGBT CHN 633 diode Semikron Semitop sk 70 kq 12 CHN 709 Semikron sk 51 Semikron Semitop sk 70 kq um 3567 CHN 633 Diodes semikron sk 23 gd 063
Contextual Info: SEMITOP Cool Components SEMITOP® "Coole Alternative" Merkmale einer von SEMIKRON aufgebrachten Wärmeleitschicht bezo- • Niedriger Wärmewiderstand gen werden. Dabei entfällt für den SEMITOP verwendet die bewähr- Anwender die aufwendige und te DCB Keramik zur elektrischen