9114 RAM Search Results

VDR 20-100

Abstract: MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3
Contextual Info: MWS5114 TM 1024-Word x 4-Bit LSI Static RAM March 1997 Features as 2V Min • Fully Static Operation • All Inputs and Outputs Directly TTL Compatible • Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 4045 Types • Three-State Outputs

2114 Ram pinout 18

Contextual Info: MWS5114 H A R R IS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM February 1992 Description Features • Fully Static Operation • Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 404S Types • Common Data Input and Output

F1RM

Contextual Info: RSP-2400 24CDW Single Output Power Supply series I Fsa1ure& : AC in fill 1SO-2MYAC AC : "sul a d 3L, *ige e irre ni Irmi ig M ig i d l e t n c j u p 1o 9114. Huilón adive PFC 1 Midion,lhh > ö .« I ’r o te lio ie . ¿fiori ceìol:1 : t ^ í f loao : tJie-r ve 1jg e : C w r le-npe-alLre

9114 RAM

Abstract: 9114 static ram AM9124 RAM 9114 AM9114 91L14 2114 static ram AM9114C KS000010 AM91L14B
Contextual Info: a Advanced Micro Devices A m 9 1 1 4 /A m 9 1 L 1 4 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • Low operating and standby power Access tim es down to 200 rts Am9114 is a direct plug-in replacem ent fo r 2114 • • High output drive: 3.2-mA sink current @ 0.4 V

AM91L148

Abstract: 9114 RAM AM81H 91L14
Contextual Info: A m 9 1 1 4 /A m 9 1 L 1 4 “ " 1024x4 Static RAM S Devices DISTINCTIVE CHARACTERISTICS • • • Low operating and standby power Access times down to 200 ns Am9114 is a direct plug-in replacement for 2114 • • High output drive: 3.2-mA sink current @ 0.4 V

91L14

Abstract: cd018 ST 9114 Am91L14
Contextual Info: a Am9114/Am91 L14 AdvS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • Low operating and standby power Access tim es down to 200 ns Am9114 is a direct plug-in replacem ent fo r 2114 • • High output drive: 3.2-mA sink current @ 0.4 V TTL-kJentical input/output levels

91l14

Abstract: RAM 9114 AM9124 AM91L14C 9114 RAM AM9114 9114 static ram STATIC RAM 2114 AM9114E AM9114B
Contextual Info: A m 9 1 1 4 / A m 9 1 L 1 4 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating and standby power A ccess times down to 200 ns Am9114 is a direct plug-in replacement for 2114 High output drive: 3.2-mA sink current TTL-identical input/output levels

Am91L24

Abstract: AM91L24B 91l24 2114 1k x 4 SRAM Am91L14 2114 1k x 16 RAM 2114 SRAM Am9124 Am9124/Am9114 am91l14 am91l24 AM9124B
Contextual Info: Am9114/9124 Am9114/9124 1024 x 4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • Low operating and standby power Access times down to 200 ns Am9114 is a direct plug-in replacement for 2114 Am9124 pin and function compatible with Am9114 and 2114, plus 5 3 power-down feature

Contextual Info: 10 -1.14 REF. CIRCUIT No. 1 20 19 18 17 16 15 ROUND OR SQUARE PIN. U 5.08 13 12 11 10 9 8 7 6 -M s 5 A O l r \ I 4 3 2 CKT. a S E C T IO N A -A SIZE HOUSING OPTION WITHOUT RAMP 9 1 8 1 3 -9 0 * 91813-9020 -9019 -9018 -9017 -9016 -9015 -9014 -9013 -9012 -9011

JEOL

Contextual Info: k m a COAXIAL u R 1 0 8 . 2 9 4 . OOO . TECHNICAL DATA d e p a rtm e n t LOW PROFIL-PANEL EEDTROUGH CABLE JACK REAR MOUNT - CABLE .085 9A 06 Page SBMA 1 / 3 Issue : SERIES. ,.D IA m o u n t i n g h o l e CHARACTERISTICS 50 NOMINAL IMPEDANCE FREQUENCY RAM6E

Contextual Info: Random-Access Memories RAMs MWS5114 a6 — I I8 “ VDD A5 — 2 I7 — A? * 4 - 3 I6 a 3 — 4 I - «8 I5 - A g CMOS 1024-Word by 4-Bit LSI Static RAM Ao — 5 I4 — I/O t Features: A| — 6 I3 — 1 / 0 2 7 I2 - I / O 3 • Fully static operation ■ In d u s try s ta n d a rd 1024 x 4 p in o u t (sam e as p in o u ts fo r 6514, 2114,

Contextual Info: MWS5114 Semiconductor 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple­ mentary MOS CMOS technology. It is designed for use in

Contextual Info: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM August 1996 Description Features • The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate comple­ mentary MOS CMOS technology. It is designed for use in

2114 Ram pinout 18

Abstract: MWS5114 MWS5114-3 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X
Contextual Info: MWS5114 S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in

2114 Ram pinout 18

Abstract: 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 2114 4 bit Ram pinout 2114 ram
Contextual Info: MWS5114 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in

Contextual Info: / T L in tA E _ i » TECHNOLOGY Precision Sample and Hold Amplifier F€ATUR€S DCSCRIPTIOH • 4/is Typical Acquisition Time ■ Guaranteed Q.01% Max. Gain Error ■ 2mVTyp. Offset Voltage ■ 2.5mV Max. Hold Step ■ Very Low Feedthrough 80dB Min.

MCS-85

Abstract: MCS-48 MCS48 9114 RAM I8741A MCS-80 intel iapx mcs 48
Contextual Info: illt o l P E & D M D IM IiW ” I 8 7 4 1 A UNIVERSAL PERIPHERAL INTERFACE 8-BIT MICROCOMPUTER INDUSTRIAL • 8-Bit CPU plus EPROM, RAM, I/O, Timer and Clock in a Single Package . One 8-Bit Status and Two Data Registers for Asynchronous Slave-to-Master Interface

transistor D 4515

Abstract: PJ 1179 D 4515 ST2000 4463 SL71Y STE2001 701023 Pj 1189 1 928 403 226
Contextual Info: Solutions for Sales Offices 69050-002 Manaus/AM Costantino Nery Street, 2789 80 Stair - 806 Room Chapada Tel. +55 92 657 0017 Fax +55 92 657 0157 COLORADO Longmont Tel. +303 772 9729 Fax +303 381 3680 CONNECTICUT Woodstock Tel. +860 928 7700 Fax +860 928 2722

lf39

Abstract: 10k8 l 9113
Contextual Info: r r u v m TECHNOLOGY Precision Sample and Hold Amplifier F€ flTU A€ S D C S C R IP T IO n • 4/iS Typical Acquisition Tim e The LF39 8 is a precision sample and hold amplifier which ■

Contextual Info: _CYM1822 T SEMICONDUCTOR 16K x 32 Static RAM Module with Separate I/O Features Functional D escription • High-density 512K-bit SRAM module The CYM1822 is a high-performance 512-kbit static RAM module organized as 16K words by 32 bits. This module ¡»con­

LF398S8

Abstract: LF398 .00VF
Contextual Info: r r u TECHNOLOGY vm i _ LF398S8 Precision Sample and Hold Amplifier FCATURCS DCSCRIPTIOO • 4/is Typical Acquisition Tim e The LF39 8 is a precision sample and hold amplifier which ■ Guaranteed0 .0 1% M a x. G ain Error uses a com bination of bipolar and junction F E T transis­

Contextual Info: CT CDP1825, CDP1825C Preliminary Data Types\ Division 1 18 - Û 5 - 2 1? - a 7 3 16 - a 8 4 15 — a 9 a a 6 - 4 - * 3 - V0D A0 — 5 14 — I/O Ai — 6 13 — 1 /0 2 7 12 — I/O 3 A j- C S — 18 SS 19 COS/MOS 1024-Word by 4-Bit LSI Static RAMS Fully s ta tic operation

HC9115

Abstract: diode 119 HC9114 74*9114 hc911 MC74HCXXXXN AS813 74HC9115
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA 1 MC54/74HC9114 MC54/74HC9115 Product Preview N in e -W id e S c h m itt-T rig g e r B u ffe rs w ith O p e n -D ra in O u tp u ts J SUFFIX C E R A M IC CASE 732 H ig h -P e r fo r m a n c e S ilic o n -G a te C M O S

ay-5-8100

Abstract: AY5-8100 ay-3-8112 AY-3-8760 AY-3-8710 AY-3-8500 AY-3-8700-1 AY-5-8102 ay-3-0214 saa1024
Contextual Info: IL EiJ ¡MICRO ELECTRONICS 1978 DATA CATALOG GENERAL IN S T R U M E N T C O R P O R A T IO N • M IC R O E L E C T R O N IC S SS.00 I"HIL I r'i E- Index e l e c t r o n ic s I I M icroprocessor • I RAMs ■ EAROMs ■ ROMs Keyboard Encoders/Character Generators